Abstract: An etching composition includes phosphate ions, pyrophosphate ions, polyphosphate ions. or a combination thereof and an oxidant. The etching composition has a neutral or basic pH.

Abstract: An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.

Abstract: Windowed wafer assemblies having interposers are described. A described example integrated circuit (IC) package includes first and second dies, where at least one of the first or second dies includes an optical window with a light transmittance wavelength range between 0.1 micrometers and 1.0 millimeter, and an interposer die between the first and second dies, where the interposer die is coupled to the first die at a first surface of the interposer to form a first bonded interface, where the interposer is coupled to the second die at a second surface of the interposer die to form a second bonded interface, where the second surface is opposite the first surface, where the first and second bonded interfaces form a sealed cavity of the IC package that is at least partially formed by the optical window, and where the interposer die includes electrical routing.

Abstract: An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.

Abstract: Hypochlorite salts and substantially dehydrated acid-form cation exchange resin beads are combined at specified ratios within a porous enclosure such as a pouch or sachet. Hypochlorous acid solutions are produced on demand by introducing the mixture-containing pouch into a chemical excess of water. Spontaneous exchange reactions occur at room temperature within a few minutes to produce aqueous hypochlorous acid, while the cations from the hypochlorite salt are simultaneously sequestered by the resin beads. The resin beads remain contained within the original porous enclosure to allow mechanical isolation or separation from the resulting solution.

Abstract: An etching composition includes phosphate ions, pyrophosphate ions, polyphosphate ions, or a combination thereof and an oxidant. The etching composition has a neutral or basic pH.

Abstract: An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.

Abstract: A stackable molecular spectroscopy cell includes a hollow body, a first cap affixed to a first surface of the hollow body, covering a first opening in the hollow body, and a second cap affixed to a second surface of the hollow body, covering a second opening in the hollow body, and forming a sealed cavity within the hollow body. The sealed cavity contains a dipolar gas having a pressure of less than 0.5 mbar. The stackable molecular spectroscopy cell also includes a metal layer covering an inner surface of the hollow body and an inner surface of the first and second caps, including a first aperture in the metal layer covering the inner surface of the first cap and a second aperture in the metal layer covering the inner surface of the second cap.

Abstract: A device includes a die with a metallization stack. The device includes a substrate with a first region, a second region and a third region that underly the metallization stack and a first isolation trench filled with a polymer dielectric that extends between the first region and the second region of the substrate. The device also includes a second isolation trench filled with the polymer dielectric that extends between the second region and the third region. The polymer dielectric overlays a periphery of the substrate.

Abstract: A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

Abstract: Disclosed herein is an integrated circuit (IC) comprising a semiconductor wafer, a dielectric layer, and an isolation element. The semiconductor wafer has a first wafer portion and a second wafer portion each extending from a frontside surface to a backside surface. The dielectric layer interfaces with the first wafer portion and with the second wafer portion each on the frontside surface. The isolation element has an isolation dielectric material, and the isolation element extends between a first side surface of the first wafer portion and a second side surface of the second wafer portion and from an extension plane of the frontside surface to an extension plane of the backside surface. Also disclosed herein is a system comprising the IC and a package substrate coupled to the IC.

Abstract: A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.

Abstract: A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.

Abstract: An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.

Abstract: A microelectronic device package includes a host material and a gettering material. The microelectronic device package also includes a polymeric component between the host material and the gettering material. The polymeric component substantially encapsulates the gettering material. The microelectronic device package further includes a fluorochemical lubricant. The polymeric component serves to prevent a reaction between the fluorochemical lubricant and the gettering material. Alternatively, the fluorochemical lubricant may be encapsulated by a polymeric component and may be released upon an increase in temperature during or after a packaging step.

Abstract: In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.

Abstract: Millimeter wave energy is provided to a spectroscopy cavity of a spectroscopy device that contains interrogation molecules. The microwave energy is received after it traverses the spectroscopy cavity. The amount of interrogation molecules in the spectroscopy cavity is adjusted by activating a precursor material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to increase the amount of interrogation molecules or by activating the getter material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to decrease the amount of interrogation molecules.

Abstract: A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

Abstract: An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.

Abstract: In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.