Patents by Inventor Simon S. Chan
Simon S. Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10692877Abstract: An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A further benefit of the approach is that the bit line contact implant and rapid temperature anneal process can be eliminated. This approach is applicable to embedded flash, integrating high density devices and advanced logic processes.Type: GrantFiled: April 17, 2017Date of Patent: June 23, 2020Assignee: Cypress Semiconductor CorporationInventors: Ching-Huang Lu, Simon S. Chan, Hidehiko Shiraiwa, Lei Xue
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Publication number: 20190198611Abstract: A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.Type: ApplicationFiled: December 19, 2018Publication date: June 27, 2019Applicant: Cypress Semiconductor CorporationInventors: Rinji Sugino, Lei Xue, Ching-Huang LU, Simon S. Chan
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Publication number: 20170250192Abstract: An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A further benefit of the approach is that the bit line contact implant and rapid temperature anneal process can be eliminated. This approach is applicable to embedded flash, integrating high density devices and advanced logic processes.Type: ApplicationFiled: April 17, 2017Publication date: August 31, 2017Applicant: Cypress Semiconductor CorporationInventors: Ching-Huang LU, Simon S. Chan, Hidehiko Shiraiwa, Lei Xue
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Patent number: 9673206Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device comprises a first region, a second region, a first polysilicon region, and a second polysilicon region. The first polysilicon region is formed over the first and second regions of the semiconductor device. Portions of the first and polysilicon layers that are uncovered by either of a first mask and a second mask are removed. The first mask is formed on the first polysilicon layer and the second mask is formed on the second polysilicon layer in the first region and not on in the second region.Type: GrantFiled: April 19, 2016Date of Patent: June 6, 2017Assignee: Cypress Semiconductor CorporationInventors: Scott A. Bell, Angela Tai Hui, Simon S. Chan
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Publication number: 20160300844Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device comprises a first region, a second region, a first polysilicon region, and a second polysilicon region. The first polysilicon region is formed over the first and second regions of the semiconductor device. Portions of the first and polysilicon layers that are uncovered by either of a first mask and a second mask are removed. The first mask is formed on the first polysilicon layer and the second mask is formed on the second polysilicon layer in the first region and not on in the second region.Type: ApplicationFiled: April 19, 2016Publication date: October 13, 2016Inventors: Scott A. Bell, Angela Tai Hui, Simon S. Chan
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Patent number: 9431503Abstract: An integrated circuit comprises a first poly-silicon region including a first poly-silicon layer, a second poly-silicon layer disposed over the first poly-silicon layer, a first poly-silicon finger associated with the first poly-silicon layer, and a second poly-silicon finger associated with the second poly-silicon layer. The first poly-silicon finger and the second poly-silicon finger are oriented in a substantially orthogonal manner relative to each other. The integrated circuit comprises a second poly-silicon gate region including the first poly-silicon layer. The first polysilicon gate region and the second polysilicon gate region each have different poly-silicon gate structures.Type: GrantFiled: January 7, 2014Date of Patent: August 30, 2016Assignee: CYPRESS SEMICONDUCTOR CORPORATIONInventors: Chuan Lin, Hidehiko Shiraiwa, Bradley Marc Davis, Lei Xue, Simon S. Chan, Kenichi Ohtsuka, Angela T. Hui, Scott Allan Bell
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Patent number: 9318498Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.Type: GrantFiled: January 7, 2013Date of Patent: April 19, 2016Assignee: CYPRESS SEMICONDUCTOR CORPORATIONInventors: Scott A. Bell, Angela Tai Hui, Simon S. Chan
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Publication number: 20140193972Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.Type: ApplicationFiled: January 7, 2013Publication date: July 10, 2014Applicant: Spansion LLCInventors: Scott A. BELL, Angela Tai HUI, Simon S. CHAN
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Publication number: 20140117435Abstract: A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away.Type: ApplicationFiled: January 7, 2014Publication date: May 1, 2014Applicant: Spansion LLCInventors: Chuan LIN, Hidehiko Shiraiwa, Bradley Marc Davis, Lei Xue, Simon S. Chan, Kenichi Ohtsuka, Angela T. Hui, Scott Allan Bell
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Patent number: 8652907Abstract: A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away.Type: GrantFiled: March 24, 2011Date of Patent: February 18, 2014Assignee: Spansion LLCInventors: Chuan Lin, Hidehiko Shiraiwa, Bradley Marc Davis, Lei Xue, Simon S. Chan, Kenichi Ohtsuka, Angela T. Hui, Scott Allan Bell
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Patent number: 8617983Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: GrantFiled: September 10, 2012Date of Patent: December 31, 2013Assignee: Spansion LLCInventor: Simon S. Chan
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Publication number: 20130005138Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: SPANSION LLCInventor: Simon S. CHAN
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Publication number: 20130001700Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: ApplicationFiled: September 14, 2012Publication date: January 3, 2013Applicant: SPANSION LLCInventor: Simon S. CHAN
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Patent number: 8314454Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: GrantFiled: December 16, 2010Date of Patent: November 20, 2012Assignee: Spansion LLCInventor: Simon S. Chan
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Patent number: 8283249Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: GrantFiled: December 16, 2010Date of Patent: October 9, 2012Assignee: Spansion LLCInventor: Simon S. Chan
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Publication number: 20120241871Abstract: A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away.Type: ApplicationFiled: March 24, 2011Publication date: September 27, 2012Applicant: Spansion LLCInventors: Chuan Lin, Hidehiko Shiraiwa, Bradley Marc Davis, Lei Xue, Simon S. Chan, Kenichi Ohtsuka, Angela T. Hui, Scott Allan Bell
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Patent number: 8236693Abstract: The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.Type: GrantFiled: May 15, 2007Date of Patent: August 7, 2012Assignee: Advanced Micro Devices, Inc.Inventors: Wen Yu, Paul Besser, Bin Yang, Haijiang Yu, Simon S. Chan
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Publication number: 20110129976Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: ApplicationFiled: December 16, 2010Publication date: June 2, 2011Applicant: SPANSION LLCInventor: Simon S. CHAN
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Publication number: 20110084330Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: ApplicationFiled: December 16, 2010Publication date: April 14, 2011Applicant: SPANSION LLCInventor: Simon S. CHAN
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Patent number: 7879718Abstract: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.Type: GrantFiled: December 27, 2006Date of Patent: February 1, 2011Assignee: Spansion LLCInventor: Simon S. Chan