Abstract: A semiconductor-on-insulator (SOI) device includes a buried insulator layer and an overlying semiconductor layer. Portions of the insulator layer are doped with the same dopant material, for example boron, as is in corresponding portions of the overlying surface semiconductor layer. A peak concentration of the dopant material may be located in the insulator material, or may be located in a lower portion of the surface semiconductor layer. The dopant material in the insulator layer may prevent depletion of dopant material from portions of the surface semiconductor layer, such as from channel portions of NMOS transistors.

Abstract: A method for forming insulating spacers for separating conducting layers in semiconductor wafer fabrication. The spacers are formed by removing portions of a protective photoresist layer through photolithography, and then through etching of exposed portions of the insulating layer. The spacers allow for fabrication of components that are smaller in size than are obtainable through conventional photolithography methods.