Patents by Inventor Simone Severi
Simone Severi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11944965Abstract: A microfluidic device, a diagnostic device including the microfluidic device and a method for making the microfluidic device are provided. The microfluidic device includes: (i) a transparent substrate comprising a cavity, the cavity opening up to a top of the transparent substrate; (ii) a transparent layer covering the cavity, and (iii) a semiconductor substrate over the transparent layer and the transparent substrate, wherein the semiconductor substrate comprises a through hole overlaying the cavity and exposing the transparent layer.Type: GrantFiled: May 21, 2020Date of Patent: April 2, 2024Assignee: Imec vzwInventors: Giuseppe Fiorentino, Simone Severi, Aurelie Humbert
-
Patent number: 11676851Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET aType: GrantFiled: December 19, 2018Date of Patent: June 13, 2023Assignee: IMEC VZWInventors: Aurelie Humbert, Simone Severi
-
Publication number: 20230127645Abstract: An intermediate structure for a microfluidic device and a method for manufacturing a microfluidic device are provided. The method includes: a) providing a first substrate having a first layer thereon, and a second layer on the first layer; b) forming a first nanopore in the second layer, in such a way that a part of the first layer coincides with a bottom of the first nanopore; c) exposing said part of the first layer to a liquid etchant, thereby forming a cavity under the first nanopore, the cavity having a larger width than a width of the bottom of the first nanopore; d) filling the first nanopore and the cavity with a filling material, thereby forming a first plug; e) forming a bottom fluidic access for the nanopore by removing part of the first substrate and part of the first layer so as to expose the plug; and f) removing the plug, thereby fluidly connecting the bottom fluidic access to the nanopore.Type: ApplicationFiled: October 10, 2022Publication date: April 27, 2023Inventors: Simone Severi, Bert Du Bois, Ashesh Ray Chaudhuri
-
Publication number: 20220334079Abstract: A method for forming a nanopore transistor and a nanopore transistor is provided. The method includes: (a) forming an aperture in a filler material by: (i) providing a fin comprising a semiconductor layer and a top layer; (ii) pattering the top layer to form a pillar; (iii) embedding the pillar in a filler material; (iv) removing the pillar, leaving an aperture; (v) lining the aperture with a spacer material; (b) forming a nanopore by etching through the aperture; (b) lining the nanopore with a dielectric, (c) forming a source and a drain by either: between steps a.ii and a.iii, doping the bottom semiconductor layer by using the pillar as a mask, or after step c, filling the aperture with a sealing material, thereby forming a post; removing the filler material; doping the bottom semiconductor layer by using the post as a mask; and removing the sealing material.Type: ApplicationFiled: March 11, 2022Publication date: October 20, 2022Inventors: David Barge, Bert Du Bois, Simone Severi, Ashesh Ray Chaudhuri
-
Patent number: 11408764Abstract: A sensor comprises: a thin structure, which is configured to receive a force for deforming a shape of the thin structure and which is arranged above a substrate; and a waveguide for guiding an electro-magnetic wave comprising: a first waveguide part; and a second waveguide part; wherein the second waveguide part has a larger width than the first waveguide part; and wherein the first and the second waveguide parts are spaced apart by a gap which is sufficiently small such that the first and second waveguide parts unitely form a single waveguide, wherein one of the first and the second waveguide part is arranged at least partly on the thin structure and another of the first and the second waveguide part is arranged on the substrate.Type: GrantFiled: December 4, 2019Date of Patent: August 9, 2022Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVENInventors: Wouter Jan Westerveld, Veronique Rochus, Simone Severi, Roelof Jansen
-
Patent number: 11372158Abstract: A waveguide for guiding an electro-magnetic wave comprises: a first waveguide part; and a second waveguide part; wherein the first waveguide part has a first width in a first direction (Y) perpendicular to the direction of propagation of the electro-magnetic wave and the second waveguide part has a second width in the first direction (Y), wherein the second width is larger than the first width; and wherein the first and the second waveguide parts are spaced apart by a gap in a second direction (Z) perpendicular to the first and second planes in which the waveguide parts are formed, wherein the gap has a size which is sufficiently small such that the first and second waveguide parts unitely form a single waveguide for guiding the electro-magnetic wave. The waveguide may be used in numerous applications, such as in a photonic integrated circuit, in a sensor or in an actuator.Type: GrantFiled: December 4, 2019Date of Patent: June 28, 2022Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVENInventors: Wouter Jan Westerveld, Veronique Rochus, Simone Severi, Roelof Jansen
-
Patent number: 11367797Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.Type: GrantFiled: July 24, 2018Date of Patent: June 21, 2022Assignee: IMEC VZWInventors: Chang Chen, Koen Martens, Pol Van Dorpe, Simone Severi
-
Publication number: 20210300752Abstract: A method for fabricating a microfluidic device includes providing an assembly that includes a first silicon substrate having a hydrophilic silicon oxide top surface that includes a microfluidic channel and a second silicon substrate having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, the second silicon substrate including fluidic access holes giving fluidic access to the microfluidic channel. The method also includes exposing the assembly to oxidative species including one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.Type: ApplicationFiled: March 16, 2021Publication date: September 30, 2021Inventors: Giuseppe Fiorentino, Aurelie Humbert, Simone Severi, Benjamin Jones
-
Publication number: 20210184053Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.Type: ApplicationFiled: July 24, 2018Publication date: June 17, 2021Inventors: Chang Chen, Koen Martens, Pol Van Dorpe, Simone Severi
-
Publication number: 20200406255Abstract: A microfluidic device, a diagnostic device including the microfluidic device and a method for making the microfluidic device are provided. The microfluidic device includes: (i) a transparent substrate comprising a cavity, the cavity opening up to a top of the transparent substrate; (ii) a transparent layer covering the cavity, and (iii) a semiconductor substrate over the transparent layer and the transparent substrate, wherein the semiconductor substrate comprises a through hole overlaying the cavity and exposing the transparent layer.Type: ApplicationFiled: May 21, 2020Publication date: December 31, 2020Inventors: Giuseppe Fiorentino, Simone Severi, Aurelie Humbert
-
Patent number: 10838148Abstract: A method for manufacturing of a waveguide for guiding an electro-magnetic wave comprising: forming a first waveguide layer, a sacrificial layer and a protection layer on a first wafer, patterning to define a pattern of a first waveguide part and a supporting structure in the first waveguide layer; exposing the sacrificial layer on the first waveguide part while the protection layer still covers the sacrificial layer on the supporting structure; removing the sacrificial layer on the first waveguide part; removing the protection layer; bonding a second wafer to the sacrificial layer of the first wafer such that a second waveguide part is supported by the supporting structure and a gap corresponding to the thickness of the sacrificial layer is formed between the first and second waveguide parts.Type: GrantFiled: December 4, 2019Date of Patent: November 17, 2020Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVENInventors: Md Mahmud Ul Hasan, Simone Severi, Veronique Rochus, Wouter Jan Westerveld
-
Publication number: 20200350200Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET aType: ApplicationFiled: December 19, 2018Publication date: November 5, 2020Inventors: Aurelie HUMBERT, Simone SEVERI
-
Patent number: 10768138Abstract: Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.Type: GrantFiled: December 20, 2018Date of Patent: September 8, 2020Assignee: IMEC VZWInventors: Koen Martens, Nadine Collaert, Eddy Kunnen, Simone Severi
-
Publication number: 20200173843Abstract: A sensor comprises: a thin structure, which is configured to receive a force for deforming a shape of the thin structure and which is arranged above a substrate; and a waveguide for guiding an electro-magnetic wave comprising: a first waveguide part; and a second waveguide part; wherein the second waveguide part has a larger width than the first waveguide part; and wherein the first and the second waveguide parts are spaced apart by a gap which is sufficiently small such that the first and second waveguide parts unitely form a single waveguide, wherein one of the first and the second waveguide part is arranged at least partly on the thin structure and another of the first and the second waveguide part is arranged on the substrate.Type: ApplicationFiled: December 4, 2019Publication date: June 4, 2020Inventors: Wouter Jan WESTERVELD, Veronique ROCHUS, Simone SEVERI, Roelof JANSEN
-
Publication number: 20200174192Abstract: A method for manufacturing of a waveguide for guiding an electro-magnetic wave comprising: forming a first waveguide layer, a sacrificial layer and a protection layer on a first wafer, patterning to define a pattern of a first waveguide part and a supporting structure in the first waveguide layer; exposing the sacrificial layer on the first waveguide part while the protection layer still covers the sacrificial layer on the supporting structure; removing the sacrificial layer on the first waveguide part; removing the protection layer; bonding a second wafer to the sacrificial layer of the first wafer such that a second waveguide part is supported by the supporting structure and a gap corresponding to the thickness of the sacrificial layer is formed between the first and second waveguide parts.Type: ApplicationFiled: December 4, 2019Publication date: June 4, 2020Inventors: Md Mahmud Ul HASAN, Simone SEVERI, Veronique ROCHUS, Wouter Jan WESTERVELD
-
Publication number: 20200174186Abstract: A waveguide for guiding an electro-magnetic wave comprises: a first waveguide part; and a second waveguide part; wherein the first waveguide part has a first width in a first direction (Y) perpendicular to the direction of propagation of the electro-magnetic wave and the second waveguide part has a second width in the first direction (Y), wherein the second width is larger than the first width; and wherein the first and the second waveguide parts are spaced apart by a gap in a second direction (Z) perpendicular to the first and second planes in which the waveguide parts are formed, wherein the gap has a size which is sufficiently small such that the first and second waveguide parts unitely form a single waveguide for guiding the electro-magnetic wave. A photonic integrated circuit component, a sensor and an actuator comprising the waveguide are disclosed.Type: ApplicationFiled: December 4, 2019Publication date: June 4, 2020Inventors: Wouter Jan WESTERVELD, Veronique ROCHUS, Simone SEVERI, Roelof JANSEN
-
Patent number: 10626457Abstract: Arrays of integrated optical devices and their methods for production are provided. The devices include an integrated bandpass filter layer that comprises at least two multi-cavity filter elements with different central bandpass wavelengths. The device arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The device arrays are well suited for miniaturization and high throughput.Type: GrantFiled: October 28, 2016Date of Patent: April 21, 2020Assignee: Pacific Biosciences of California, Inc.Inventors: Ravi Saxena, Annette Grot, Nicolaas Tack, Pilar Gonzalez, Bert Du Bois, Simone Severi
-
Publication number: 20190195827Abstract: Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.Type: ApplicationFiled: December 20, 2018Publication date: June 27, 2019Applicant: IMEC VZWInventors: Koen Martens, Nadine Collaert, Eddy Kunnen, Simone Severi
-
Patent number: 10267733Abstract: The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. The device includes a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The first layer includes a detector element. The second layer includes a rejection filter. The third layer is fabricated from dielectric material. The fourth layer is an optical waveguide configured and positioned such that a top surface of the fourth layer is illuminated with an evanescent tail of excitation light guided by the optical waveguide when the fluorescent tags are present. The fifth layer includes a microfluidic channel. The optical waveguide is configured and positioned such that the microfluidic channel is illuminated with the evanescent tail. The detector element is positioned such that light from activated fluorescent tags can be received.Type: GrantFiled: May 22, 2015Date of Patent: April 23, 2019Assignee: IMEC VZWInventors: Pol Van Dorpe, Liesbet Lagae, Peter Peumans, Andim Stassen, Philippe Helin, Bert Du Bois, Simone Severi
-
Publication number: 20170145498Abstract: Arrays of integrated optical devices and their methods for production are provided. The devices include an integrated bandpass filter layer that comprises at least two multi-cavity filter elements with different central bandpass wavelengths. The device arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The device arrays are well suited for miniaturization and high throughput.Type: ApplicationFiled: October 28, 2016Publication date: May 25, 2017Inventors: Ravi SAXENA, Annette GROT, Nicolaas TACK, Pilar GONZALEZ, Bert DU BOIS, Simone SEVERI