Abstract: The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.

Abstract: A stabilized vertical GMR head is provided and includes a GMR stack having a pair of free magnetic layers having a first edge and a second edge. A pair of soft magnetic layers is also included and positioned so that one of the soft magnetic layers is adjacent to the first edge and another of the soft magnetic layers is adjacent to the second edge. A pair of AFM layers is included and positioned so that one of the AFM layers is adjacent to one of said soft magnetic layers and another of said AFM layers being adjacent to other of said soft magnetic layers.

Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic. (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact with the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

Abstract: A read sensor for use in a magnetic read head includes a magnetoresistive stack having a plurality of layers, and first and second shield regions positioned adjacent to the magnetoresistive stack. Each of the shield regions includes a first soft magnetic layer for shunting flux from an adjacent track to the shield region instead of the magnetoresistive stack.

Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Abstract: A tunneling magnetoresistive head according to the present invention includes a tunneling magnetoresistive stack having a free layer, a barrier layer, a pinned layer and a pinning layer. The tunneling magnetoresistive stack is configured to operate in a current perpendicular to plane (CPP) mode, wherein a sense current flows substantially perpendicular to a longitudinal plane of the barrier layer. The tunneling magnetoresistive head includes a first shield and a second shield coupled to opposing sides of the tunneling magnetoresistive stack. The first and the second shields act as electrodes to couple the sense current to the tunneling magnetoresistive stack. The first shield has a concave shape and substantially surrounds the free layer. The tunneling magnetoresistive head also includes a spacer layer and a layer of antiferromagnetic material. The spacer layer is formed on the free layer. The layer of antiferromagnetic material is formed on the second spacer layer.

Abstract: A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

Abstract: A read sensor for use in a magnetic read head includes a magnetoresistive stack having a plurality of layers, and first and second shield regions positioned adjacent to the magnetoresistive stack. Each of the shield regions includes a first soft magnetic layer for shunting flux from an adjacent track to the shield region instead of the magnetoresistive stack.

Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Abstract: The present invention comprises a magnetoresistive sensor including a cap layer, a free layer, a spacer layer, a pinned layer, an oxide layer, a pinning layer, a seed layer, and a substrate layer. The sensor consists of the cap layer adjacent the free layer. The free layer is adjacent to the spacer layer. The spacer layer is adjacent to the pinned layer. The pinned layer is adjacent to the oxide layer. The oxide layer is adjacent to the pinning layer. The pinning layer is adjacent to the seed layer and the seed layer is adjacent to the substrate. The present invention also comprises a method of manufacturing the magnetoresistive sensor including forming a layered structure. An electron specular scattering effect occurs at the oxide interface to achieve enhanced GMR responses while maintaining thermostability.

Abstract: A spin valve head according to the present invention includes a spin valve stack having a free layer, a first spacer layer, a pinned layer and a pinning layer. The spin valve head includes a first shield and a second shield coupled to opposing sides of the spin valve stack. The first shield has a concave shape and substantially surrounds the free layer. The spin valve head also includes a second spacer layer and a layer of antiferromagnetic material. The second spacer layer is formed on the free layer. The layer of antiferromagnetic material is formed on the second spacer layer.

Abstract: A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.

Abstract: A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a CrMnPt pinning layer (20). The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the CrMnPt pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18). The combination of layers with their respective atomic percentage compositions and thicknesses results in a GMR ratio of at least 12%.

Abstract: A giant magnetoresistive stack for use in a magnetic read head includes a NiFeCr seed layer, a ferromagnetic free layer, at least one nonmagnetic spacer layer, at least one ferromagnetic pinned layer, and at least one PtMnX pinning layer, where X is selected from the group consisting of Cr, Pd, Nb, Re, Rh, Ta, Ru, Os, Zr, Hf, Ni, Co, and Fe. The ferromagnetic free layer has a rotatable magnetic moment. The ferromagnetic pinned layer has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer. The nonmagnetic spacer layer is positioned between the free layer and the pinned layer. The NiFeCr seed layer is positioned adjacent to either the free layer or the pinning layer.

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

Abstract: A spin valve head according to the present invention includes a spin valve stack having a free layer, a first spacer layer, a pinned layer and a pinning layer. The spin valve stack is configured to operate in a current perpendicular to plane (CPP) mode, wherein a sense current flows substantially perpendicular to a longitudinal plane of the first spacer layer. The spin valve head includes a first shield and a second shield coupled to opposing sides of the spin valve stack. The first and the second shields act as electrodes to couple the sense current to the spin valve stack. The first shield has a concave shape and substantially surrounds the free layer. The spin valve head also includes a second spacer layer and a layer of antiferromagnetic material. The second spacer layer is formed on the free layer. The layer of antiferromagnetic material is formed on the second spacer layer.

Abstract: A spin valve sensor is disclosed that comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material. A first layer of non-ferromagnetic material is positioned between the first and second layers of ferromagnetic material. A pinning layer is positioned adjacent to the first layer of ferromagnetic material such that the pinning layer is in contact with the first layer of ferromagnetic material. The spin valve includes synthetic antiferromagnetic bias means extending over passive end regions of the second layer of ferromagnetic material for producing a longitudinal bias in the passive end regions of a level sufficient to maintain the passive end regions in a single domain state. A method for forming a spin valve sensor with exchange tabs is also disclosed.

Abstract: A thin film structure suitable for use as a shield for a read element of a transducing head has an first ferromagnetic layer, a second ferromagnetic layer and a first decoupling layer. The first decoupling layer is positioned between the first ferromagnetic layer and the second ferromagnetic layer. An easy axis of the first ferromagnetic layer is substantially parallel to an easy axis of the second ferromagnetic layer. The first decoupling layer causes a magnetization of the first ferromagnetic layer to be substantially antiparallel to a magnetization of the second ferromagnetic layer.

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.