Abstract: A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a PtMnX pinning layer (20), where X is either Cr or Pd. The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18).

Abstract: A spin tunnel junction magnetoresistive head in accordance with the invention includes a pinned ferromagnetic layer, a free ferromagnetic layer and a spin tunnel barrier material positioned relative to the pinned and free ferromagnetic layers such that current flowing through the free ferromagnetic layer is in the plane of the free ferromagnetic layer. The spin tunnel barrier material forms first and second edge junctions. Using the edge junctions, the free ferromagnetic material, the pinned ferromagnetic and the edge junctions can all be formed at least partially in plane with each other, reducing shield-to-shield spacing for the head.

Abstract: A planar spin valve read head comprises a top and a bottom shield, and a first and a second gap layer. The first gap layer is positioned adjacent to the bottom shield. The second gap layer is positioned adjacent to the top shield. The read head includes a planar sensor structure positioned between the first and the second gap layers for sensing a magnetic field from a magnetic medium.

Abstract: A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact wish the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.

Abstract: A magnetic sensor and method for making the sensor are disclosed. The sensor includes a giant-magnetoresistive sensing layer having a ferromagnetic free layer and a hard bias layer to maintain the free layer in a single-domain state or to stabilize the free layer. The hard bias layer has a coercivity of at least 2,000 Oe and a magnetic remnance times thickness at least twice the value of the saturation magnetization times thickness of the free layer. The hard bias layer includes a permanent magnetic layer formed on top of a seed layer made of the alloy TiW or other similar alloys. The seed layer may also be a bi-layer having a layer of TiW or ther similar alloys and a layer of soft magnetic material, with the former in contact with the permanent magnetic layer.

Abstract: A magnetic read head (30) for use in a magnetic data storage and retrieval system has a first current contact (40), a second current contact (42), a magnetoresistive read sensor (34), and a demagnetization field balance element (50). Positioned between the first and second current contacts (40, 42) are both the magnetoresistive read sensor (34) and the demagnetization field balance element (50). The demagnetization field balance element (50) is both electrically isolated from and magnetically coupled to the magnetoresistive read sensor (34).

Abstract: The data storage system includes a storage medium having a data surface with data stored thereon, the stored data comprises variations in magnetic fields across the data surface. A slider is adapted to move across the data surface, the slider includes an air bearing surface (ABS) which is substantially parallel to the data surface. A current source provides a sense current (I) and readback circuitry is adapted to receive a readback signal and responsively provide a data output. A magnetoresistive sensor carried on the slider is adapted to receive the sense current (I), readback data from the data surface in response to variations in the magnetic field across the disc surface, and responsively provide the readback signal to the readback circuitry. The sensor is adapted to exhibit a GMR effect in response to a magnetic field. The sensor includes a free layer and a pinned layer each having respective quiescent magnetic field vectors.

Abstract: A spin valve sensor is constructed with an electrically conductive antiferromagnetic pinning layer. A first ferromagnetic layer is placed proximate the pinning layer. A second ferromagnetic layer is included with a non-ferromagnetic electrically conductive layer placed between the first and second ferromagnetic layers. A boundary layer of electrically insulating material is placed proximate to the second layer of ferromagnetic material opposite the non-ferromagnetic electrically conductive layer. Preferred embodiments exhibit an enhanced giant magnetoresistive (GMR) effect presumably due to scattering that is more specular at the interface with the electrically insulating material.

Abstract: A spin valve sensor and a method of fabricating the same are disclosed. The spin valve sensor includes a first layer of ferromagnetic material and a second layer of ferromagnetic material, with the second layer of ferromagnetic material having a thickness of less than about 100 .ANG.. A first layer of non-ferromagnetic conducting material is positioned between the first and second layers of ferromagnetic material. A NiMn pinning layer is positioned adjacent to the second layer of ferromagnetic material such that the pinning layer is in contact with the second layer of ferromagnetic material, wherein the NiMn pinning layer has a thickness of less than about 200 .ANG. and provides a pinning field for pinning a magnetization of the second layer of ferromagnetic material in a first direction.