Abstract: An electrode structure and a touch panel including the electrode structure are provided. The electrode structure includes a membrane layer and a metallic nanowires layer having metallic nanowires. A first portion of the metallic nanowires layer is covered by the membrane layer, and a second portion of the metallic nanowires layer is exposed out of the membrane layer. The membrane layer is made of a copolymer formed by mixing two or more materials having different functional groups.

Abstract: A touch sensing panel includes a substrate, a touch sensing electrode, an etching-inhibition unit, and a peripheral trace. The substrate includes a touch sensing area and a peripheral area. The touch sensing electrode and the peripheral trace are respectively formed on the touch sensing area and the peripheral area, and the etching-inhibition unit is at least formed on the touch sensing area. The touch sensing electrode is electrically connected with the peripheral trace and includes a first part of a metal nanowire layer, which is patterned. The peripheral trace includes a metal layer and a second part of the metal nanowire layer. The metal layer directly contacts the second part of the metal nanowire layer. The metal layer and the second part of the metal nanowire layer have a co-planar etch-surface.

Abstract: A touch sensing panel includes a substrate, a touch sensing electrode, an etching-inhibition unit, and a peripheral trace. The substrate includes a touch sensing area and a peripheral area. The touch sensing electrode and the peripheral trace are respectively formed on the touch sensing area and the peripheral area, and the etching-inhibition unit is at least formed on the touch sensing area. The touch sensing electrode is electrically connected with the peripheral trace and includes a first part of a metal nanowire layer, which is patterned. The peripheral trace includes a metal layer and a second part of the metal nanowire layer. The metal layer directly contacts the second part of the metal nanowire layer. The metal layer and the second part of the metal nanowire layer have a co-planar etch-surface.

Abstract: A patterning process for forming a double-sided electrode structure includes: providing a substrate having two opposite surfaces, wherein a first photo-sensitive layer and a second photo-sensitive layer are respectively formed on the opposite surfaces; forming a first metal nanowire layer on the first photo-sensitive layer and a second metal nanowire layer on the second photo-sensitive layer; and performing a double-sided lithography process. The lithography process includes: performing an exposure process to define a removing area and a remaining area on both of the first and the second photo-sensitive layers; and removing the first and second photo-sensitive layers and the first and second metal nanowire layers in the defined removing areas by a developer solution, thereby patterning the first and second metal nanowire layers.