Abstract: A metal-dielectric bonding method includes providing a first semiconductor structure including a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, where the first metal layer has a metal bonding surface facing away from the first semiconductor layer; planarizing the metal bonding surface; applying a plasma treatment on the metal bonding surface; providing a second semiconductor structure including a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, where the second dielectric layer has a dielectric bonding surface facing away from the second semiconductor layer; planarizing the dielectric bonding surface; applying a plasma treatment on the dielectric bonding surface; and bonding the first semiconductor structure with the second semiconductor structure by bonding the metal bonding surface with the dielectric bonding surface.

Abstract: Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first memory stack having a plurality of first conductor layers and a first bonding layer having a plurality of first word line bonding contacts conductively connected to the plurality of first conductor layers, respectively. A second semiconductor structure includes a second memory stack having a plurality of second conductor layers and a second bonding layer having a plurality of second word line bonding contacts conductively connected to the plurality of second conductor layers, respectively. The 3D memory device also includes a bonding interface between the first bonding layer and the second bonding layer, at which the first word line bonding contacts are in contact with the second word line bonding contacts.

Abstract: The present invention provides a stable fat-soluble active ingredient composition, microcapsule and process for preparation and use thereof. The fat-soluble active ingredient composition comprises tocopherol, vitamin C palmitate and a fat-soluble active ingredient; wherein the weight ratio of tocopherol to vitamin C palmitate is 2-8:1, the weight ratio of a combination of tocopherol with vitamin C palmitate to the fat-soluble active ingredient is 7-13:100. The present invention obtains a novel antioxidant composition without hidden dangers for improving the stability of the fat-soluble active ingredient by screening a combination of antioxidants and adjusting their proportion and dose.

Abstract: Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first memory stack having a plurality of first conductor layers and a first bonding layer having a plurality of first word line bonding contacts conductively connected to the plurality of first conductor layers, respectively. A second semiconductor structure includes a second memory stack having a plurality of second conductor layers and a second bonding layer having a plurality of second word line bonding contacts conductively connected to the plurality of second conductor layers, respectively. The 3D memory device also includes a bonding interface between the first bonding layer and the second bonding layer, at which the first word line bonding contacts are in contact with the second word line bonding contacts.

Abstract: Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure, which includes a plurality of first NAND memory strings, a plurality of first BLs, at least one of the first BLs being conductively connected to a respective one of the first NAND memory strings; and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs, respectively. The 3D memory device further includes a second semiconductor structure, which includes a plurality of second NAND memory strings, a plurality of second BLs, at least one of the second BLs being conductively connected to a respective one of the second NAND memory strings, and a second bonding layer having a plurality of second bit line bonding contacts conductively connected to the plurality of second BLs, respectively.

Abstract: Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a plurality of first NAND memory strings and a plurality of first BLs. At least one of the first BLs may be conductively connected to a respective one of the first NAND memory strings. The first semiconductor structure also includes a plurality of first conductor layers, and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs and a plurality of first word line bonding contacts conductively connected to the first conductor layers. A second semiconductor structure includes a plurality of second NAND memory strings and a plurality of second BLs.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first bonding layer on the surface of first substrate, the material of first bonding layer includes dielectrics such as Si, N and C, and the first bonding layer of semiconductor structure is provided with higher bonding force in wafer bonding.

Abstract: The present invention provides a stable fat-soluble active ingredient composition, microcapsule and process for preparation and use thereof. The fat-soluble active ingredient composition comprises tocopherol, vitamin C palmitate and a fat-soluble active ingredient; wherein the weight ratio of tocopherol to vitamin C palmitate is 2-8:1, the weight ratio of a combination of tocopherol with vitamin C palmitate to the fat-soluble active ingredient is 7-13:100. The present invention obtains a novel antioxidant composition without hidden dangers for improving the stability of the fat-soluble active ingredient by screening a combination of antioxidants and adjusting their proportion and dose.

Abstract: The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S1, providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S2: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S3: performing a reversed-etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S4: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure.

Abstract: The invention relates to the field of semiconductor manufacturing process, more particularly, to an image sensor having an embedded color filter and its preparation method, providing a bonded wafer with leads, and performing preparation process of metal insulated gates and embedding process of color filters on bonded wafers, etching to expose the opening of the lead, and eventually combining color filter process with lead process; the implementation of the invention is simple, implementation difficulty is relatively small, and can greatly improve the transmission speed of output image signal and image quality, at the same time, the technical scheme can be used in front-illuminated, back-illuminated and stackable image sensors, etc.

Abstract: The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S1, providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S2: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S3: performing a reversed-etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S4: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure.

Abstract: The invention discloses an intermediate 1-methoxyl-2,6,10-trimethyl-1,3,5, 9-undec-tetraene, and a preparation method and uses thereof. In the synthesis method for the current lycopene intermediate 2-pos double bond C-14 aldehyde (2,6,10-trimethyl-2,5,9-undecatriene-1-aldehyde), expensive methyl iodide, polluting dimethyl sulphide and dangerous strong base are needed, so that the method is hardly applied to industrial production. The invention provides a new compound 1-methoxyl-2,6,10-trimethyl-1,3,5,9-undec-tetraene, and pure 2-pos double bond C-14 aldehyde can be prepared by hydrolyzing and refining the compound. The synthetic route is simplified and the great suitability for industrial production is achieved.

Abstract: The invention discloses an intermediate 1-methoxyl-2,6,10-trimethyl-1,3,5,9-undec-tetraene, and a preparation method and uses thereof. In the synthesis method for the current lycopene intermediate 2-pos double bond C-14 aldehyde (2,6,10-trimethyl-2,5,9-undecatriene-1-aldehyde), expensive methyl iodide, polluting dimethyl sulphide and dangerous strong base are needed, so that the method is hardly applied to industrial production. The invention provides a new compound 1-methoxyl-2,6,10-trimethyl-1,3,5,9-undec-tetraene, and pure 2-pos double bond C-14 aldehyde can be prepared by hydrolyzing and refining the compound. The synthetic route is simplified and the great suitability for industrial production is achieved.