Patents by Inventor Siqing Lu
Siqing Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250118580Abstract: Methods, systems, and apparatus are provided for detecting a substrate in a chamber of a substrate processing system. In some embodiments, the system may include a sensor system comprising: a light source configured to generate light; a first light guide fixed relative to the light source and having a light input and a light output offset from the light input, the light input configured to receive light generated by the light source, wherein the first light guide guides the light between the light input and the light output so that the light output emits a light beam into a volume of the chamber; and a sensor configured to sense the light beam emitted from the light output.Type: ApplicationFiled: October 5, 2023Publication date: April 10, 2025Inventors: Mingle TONG, Siqing LU
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Patent number: 12106945Abstract: A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.Type: GrantFiled: November 17, 2021Date of Patent: October 1, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Siqing Lu, Cheonkyu Lee, Takafumi Noguchi
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Patent number: 12100579Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.Type: GrantFiled: November 18, 2020Date of Patent: September 24, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Chowdhury, Edwin C. Suarez, Harisha Sathyanarayana, Nataraj Bhaskar Rao, Siqing Lu
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Patent number: 11996315Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.Type: GrantFiled: November 18, 2020Date of Patent: May 28, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Chowdhury, Harisha Sathyanarayana, Edwin C. Suarez, Siqing Lu, Nataraj Bhaskar Rao
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Patent number: 11881375Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.Type: GrantFiled: April 15, 2021Date of Patent: January 23, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Chowdhury, Nataraj Bhaskar Rao, Siqing Lu, Ravikumar Patil
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Patent number: 11728198Abstract: An electrostatic chuck according to an embodiment includes a fixing plate on which a wafer is fixed, an electrostatic plate located under the fixing plate and configured to generate an electrostatic force to fix the wafer on the fixing plate, a plurality of heating elements located under the electrostatic plate and separated to locally control a temperature of the electrostatic plate, and a cooling plate located under the plurality of separated heating elements and configured to emit heat transferred by the plurality of separated heating elements.Type: GrantFiled: June 5, 2019Date of Patent: August 15, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myoung-Soo Park, Siqing Lu, Michio Ishikawa, Masashi Kikuchi
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Patent number: 11538697Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.Type: GrantFiled: September 10, 2020Date of Patent: December 27, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Ki Nam, Jang-Yeob Lee, Sungyeol Kim, Sunghyup Kim, Soonam Park, Siqing Lu
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Publication number: 20220336182Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.Type: ApplicationFiled: April 15, 2021Publication date: October 20, 2022Inventors: Abhishek CHOWDHURY, Nataraj BHASKAR RAO, Siqing LU, Ravikumar PATIL
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Publication number: 20220285133Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a substrate support and a side delivery gas nozzle configured to direct the process gas toward a side surface of the substrate support, a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber, and a first orifice flow restrictor or a first needle valve connected to the first gas line or a second orifice flow restrictor or a second needle valve connected to the second gas line.Type: ApplicationFiled: March 2, 2021Publication date: September 8, 2022Inventors: Abhishek Chowdhury, Jon Christian Farr, Ravikumar Patil, Eller Juco, Yi Zheng, Siqing Lu
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Publication number: 20220157635Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.Type: ApplicationFiled: November 18, 2020Publication date: May 19, 2022Inventors: Abhishek CHOWDHURY, Harisha SATHYANARAYANA, Edwin C. SUAREZ, Siqing LU, Nataraj BHASKAR RAO
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Publication number: 20220157572Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.Type: ApplicationFiled: November 18, 2020Publication date: May 19, 2022Inventors: Abhishek CHOWDHURY, Edwin C. SUAREZ, Harisha SATHYANARAYANA, Nataraj BHASKAR RAO, Siqing LU
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Publication number: 20220076931Abstract: A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.Type: ApplicationFiled: November 17, 2021Publication date: March 10, 2022Inventors: Siqing Lu, Cheonkyu LEE, Takafumi Noguchi
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Patent number: 11244839Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.Type: GrantFiled: April 16, 2019Date of Patent: February 8, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Cheonkyu Lee, Siqing Lu, Takafumi Noguchi
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Publication number: 20210384012Abstract: A substrate processing apparatus includes a chamber housing with an upper portion opened, the chamber housing defining a reaction space, a susceptor configured to support a substrate in the chamber housing, and a dielectric cover covering an upper portion of the chamber housing. The dielectric cover includes a dielectric lid, and a mode modifying assembly arranged around the dielectric lid to be spaced apart from the dielectric lid, the mode modifying assembly configured to adjust a distance from the dielectric lid.Type: ApplicationFiled: February 11, 2021Publication date: December 9, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Jinhyuk CHOI, Siqing LU, Sangki NAM, Keesoo PARK, Soonam PARK
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Publication number: 20210151300Abstract: A substrate processing apparatus and a method of manufacturing a semiconductor device, the apparatus including a plasma region in which plasma is generated; a processing region in which a substrate is processable; a shower head including a first channel and a second channel, the first channel being a passage through which the plasma flows between the plasma region and the processing region and the second channel being a passage through which a process gas is supplied to the processing region, the first channel and the second channel being separated from each other; a substrate support supporting the substrate in the processing region; and a cooler configured to supply a cooling fluid to a cooling channel of the substrate support.Type: ApplicationFiled: September 15, 2020Publication date: May 20, 2021Inventors: Jieun JUNG, Siqing LU, Soonam PARK, Kyuhee HAN
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Publication number: 20210074558Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.Type: ApplicationFiled: September 10, 2020Publication date: March 11, 2021Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Ki NAM, Jang-Yeob LEE, Sungyeol KIM, Sunghyup KIM, Soonam PARK, Siqing LU
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Publication number: 20200176230Abstract: A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.Type: ApplicationFiled: June 27, 2019Publication date: June 4, 2020Inventors: Siqing Lu, Cheonkyu LEE, Takafumi Noguchi
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Publication number: 20200066557Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.Type: ApplicationFiled: April 16, 2019Publication date: February 27, 2020Inventors: Cheonkyu LEE, Siqing LU, Takafumi NOGUCHI
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Publication number: 20200066565Abstract: An electrostatic chuck according to an embodiment includes a fixing plate on which a wafer is fixed, an electrostatic plate located under the fixing plate and configured to generate an electrostatic force to fix the wafer on the fixing plate, a plurality of heating elements located under the electrostatic plate and separated to locally control a temperature of the electrostatic plate, and a cooling plate located under the plurality of separated heating elements and configured to emit heat transferred by the plurality of separated heating elements.Type: ApplicationFiled: June 5, 2019Publication date: February 27, 2020Inventors: Myoung-soo Park, Siqing Lu, Michio Ishikawa, Masashi Kikuchi
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Patent number: D1038049Type: GrantFiled: November 18, 2020Date of Patent: August 6, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Chowdhury, Harisha Sathyanarayana, Edwin C. Suarez, Siqing Lu, Nataraj Bhaskar Rao