Patents by Inventor Siu-On TUNG
Siu-On TUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9882151Abstract: A compound including a ligand L1 of Formula I, is described. In Formula I: rings A and B each independently represent a 5-membered or 6-membered carbocyclic or heterocyclic ring; X, Y, Z, and W are either carbon or nitrogen; R1 to R6 are selected from a variety of substituents, where adjacent substituents can be joined to form a fused ring; ligand L1 is coordinated to a metal M by X-M and Y-M bonds; and ligand L1 is optionally linked with other ligands to produce a tridentate, tetradentate, pentadentate or hexadentate ligand. Formulations and devices, such as an OLEDs, that include the compound that include a ligand L1 of Formula I are also described.Type: GrantFiled: October 29, 2015Date of Patent: January 30, 2018Assignee: UNIVERSAL DISPLAY CORPORATIONInventors: Raymond Kwong, Chi Hang Lee, Siu Tung Lam, Kit Yee Tsang, Geza Szigethy
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Publication number: 20170352809Abstract: New organic materials having polyaromatic structure containing boron and high triplet energy are disclosed. The high triplet energy materials are useful as host materials in PHOLEDs and improve device quantum efficiency and stability.Type: ApplicationFiled: May 1, 2017Publication date: December 7, 2017Applicant: Universal Display CorporationInventors: Chi Hang LEE, Siu Tung LAM, Raymond KWONG
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Patent number: 9780316Abstract: A compound having the structure of Formula I is disclosed, where Ga has the structure and Gb has the structure In the structure of Formula I, Z is selected from Si and Ge; Xa and Xb are independently selected from the group consisting of O, S, and Se; the Y and Z atoms forming the six-membered rings in Formula I, Ga, and Gb are each independently selected from C or N; each R1, R2, Ra1, Ra2, Rb1, and Rb2 is independently selected from a variety of substituents; at least one Ra1 is La-Aa; at least one Rb1 is Lb-Ab; Aa and Ab are each independently selected from carbazole, dibenzofuran, dibenzothiophene, dibenzoselenophene, triphenylene, and nitrogen-substituted variants thereof, which are optionally further substituted; and La and Lb are each independently an organic linker. Formulations and devices, such as an OLEDs, that include the compound of Formula I are also described.Type: GrantFiled: March 16, 2015Date of Patent: October 3, 2017Assignee: UNIVERSAL DISPLAY CORPORATIONInventors: Raymond Kwong, Kit Yee Tsang, Siu Tung Lam
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Patent number: 9741941Abstract: A compound that has the structure according to Formula 1: as well as, devices and formulations containing the compound of Formula 1 are disclosed. In the compound of Formula 1: X1, X2, X3, X4, X5, and X6 are independently selected from the group consisting of C—R and N; each R is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and at least one R comprises a donor group with at least two electron donating nitrogens.Type: GrantFiled: April 29, 2014Date of Patent: August 22, 2017Assignee: UNIVERSAL DISPLAY CORPORATIONInventors: Tzu-Chin Yeh, Ken-Tsung Wong, Raymond Kwong, Siu Tung Lam, Chi Hang Lee
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Patent number: 9647218Abstract: A compound having the structure of Formula 1, as well as, a first device and a formulation including the same are disclosed. In the structure of Formula 1: R5 is and (a) at least one of R1-R4 is or (b) R1 is In addition, R1, R2, R3, R4, A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, B1, B2, B3, B4, B5, B6, B7, B8, B9, B10, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, Z1, Z2, Z3, Z4, Z5, Z6, Z7, and Z8, are each independently selected from a variety of substituents, where adjacent A, B, Y, and Z groups are, optionally, joined to form a fused ring structure. Finally, X includes an acceptor group selected from —CmF2m+1, —SimF2m+1, —NCO, —NCS, —OCN, —SCN, —OCmF2m+1, and —SCmF2m+1.Type: GrantFiled: August 20, 2014Date of Patent: May 9, 2017Assignee: UNIVERSAL DISPLAY CORPORATIONInventors: Raymond Kwong, Siu Tung Lam, Chi Hang Lee
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Publication number: 20170098790Abstract: Ir phenyl parazole complexes substituted with strong electron withdrawing group such as cyano group resulted in enhancing the metal to ligand charge transfer (MLCT) which in turn resulted in enhanced emission efficiency and red shifted emission.Type: ApplicationFiled: October 5, 2016Publication date: April 6, 2017Applicant: Universal Display CorporationInventors: Raymond KWONG, Kit Yee TSANG, Siu Tung LAM, Chi Hang LEE, Sze Kui LAM
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Patent number: 9605295Abstract: An embodiment of the invention provides an ultrasensitive and selective system and method for detecting reactants of the chemical/biochemical reaction catalyzed by an oxidoreductase, such as glucose and ethanol, at a concentration level down to zepto molar (10?21 M). In embodiments, the invention provides an ampyometric immuno-sensing system comprising a working electrode, an oxidoreductase, and an external voltage generator, wherein the oxidoreductase is immobilized on the working electrode; and the voltage generator generates a voltage to induce an electric field that permeates at least a portion of the interface between the oxidoreductase and the working electrode. The ultrasensitivity of the system and method is believed to be caused by the electrical field, which enhances the quantum mechanical tunneling effect in the interface, and therefore facilitates the interfacial electron transfer between the oxidoreductase and the working electrode.Type: GrantFiled: June 26, 2012Date of Patent: March 28, 2017Assignee: CLEVELAND STATE UNIVERSITYInventor: Siu-Tung Yau
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Publication number: 20170062786Abstract: Ion conducting membranes based on aramid nanofibers (ANFs) can be prepared using layer-by-layer assembly, sol-gel processing, evaporation, spin coating, doctor blading, or other methods. Porosity is controlled through choice of additives and processing.Type: ApplicationFiled: February 19, 2015Publication date: March 2, 2017Inventors: Nicholas A. KOTOV, Siu-On TUNG, Szu-Shen HO, Samantha RAHMANI
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Patent number: 9563508Abstract: The present disclosure provides a memory management method for a rewritable non-volatile memory module. The rewritable non-volatile memory module includes physical programming units, each of which includes multiple bits. The memory management method includes: identifying a first physical programming unit by applying a predetermined read voltage, where the first physical programming unit is identified as in a fully-erased status; identifying a second and a third physical programming units which are programmed before the first physical programming unit; acquiring status data of the second and the third physical programming unit; computing a difference of the status data between the second and the third physical programming unit; if the difference is larger than a threshold, identifying the second physical programming unit as in a program failure status.Type: GrantFiled: April 23, 2015Date of Patent: February 7, 2017Assignee: PHISON ELECTRONICS CORP.Inventors: Wei Lin, Yu-Cheng Hsu, An-Cheng Liu, Siu-Tung Lam
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Patent number: 9548459Abstract: Novel diarylamino phenyl carbazole compounds are provided. By appropriately selecting the nature of the diarylamino substituent and the substitution on the carbazole nitrogen, compounds with appropriate HOMO and LUMO energies can be obtained for use as materials in a secondary hole transport layer.Type: GrantFiled: May 6, 2015Date of Patent: January 17, 2017Assignee: Universal Display CorporationInventors: Raymond Kwong, Siu Tung Lam, Chi Hang Lee, Sze Kui Lam
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Patent number: 9529666Abstract: A decoding method, a memory storage device and a memory controlling circuit are provided. The decoding method includes: sending a read command sequence configured to read the memory cells, so as to obtain a plurality of first verification bits; executing a first decoding procedure according to the first verification bits, and determining whether a first valid codeword is generated; if the first valid codeword is not generated, sending another read command sequence configured to obtain a plurality of second verification bits; calculating a total number of the memory cells conforming to a specific condition according to the second verification bits; obtaining a channel reliability message according to the total number; and executing a second decoding procedure according to the channel reliability message. Accordingly, a correcting ability of decoding may be improved.Type: GrantFiled: June 4, 2014Date of Patent: December 27, 2016Assignee: PHISON ELECTRONICS CORP.Inventors: Wei Lin, Shao-Wei Yen, Yu-Hsiang Lin, Tien-Ching Wang, Kuo-Hsin Lai, Siu-Tung Lam
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Publication number: 20160351811Abstract: A compound having a structure of Formula I: is described. In the structure of Formula I, RA, RB, and RC are each independently 5 or 6 membered aryl or heteroaryl rings; R1, R2, R3, and A are selected from a variety of substituents, including being joined or fused to form a ring; A is optionally bonded to at least one benzo or azabenzo ring to form fused rings; X1 is B, C, N, O, S or Se; and X2-X7 are independently B, C or N. Formulations and devices, such as an OLEDs, that include the compound containing a structure of Formula I are also described.Type: ApplicationFiled: May 5, 2016Publication date: December 1, 2016Applicant: Universal Display CorporationInventors: Siu Tung LAM, Raymond KWONG, Chi Hang LEE, Kit Yee TSANG
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Publication number: 20160351812Abstract: A compound containing a partial structure of Formula I: is provided. In the structure of Formula I, M is a metal with an atomic number of at least 40; RA, RB, and RC are each independently 5 or 6 membered aryl or heteroaryl rings; R1, R2, R3, and A are each independently selected from a variety of substituents and combinations thereof; A is optionally bonded to RA or RC to form a fused ring; X1 is B, C, N, O, S or Se; X2-X7 are independently B, C or N; and Y1-Y2 are independently C or N. Formulations and devices, such as an OLEDs, that include the compound containing a structure of Formula I are also described.Type: ApplicationFiled: May 5, 2016Publication date: December 1, 2016Applicant: Universal Display CorporationInventors: Siu Tung LAM, Raymond KWONG, Chi Hang LEE, Kit Yee TSANG
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Publication number: 20160333301Abstract: Bio-reactive systems for voltage controlled metabolism are described, that include electrochemical-electrostatic systems having a conventional three electrode cell modified with at least one additional gating electrode. The rate of a metabolic process occurring in at least one organism disposed on a working electrode is controllable by applying a gating voltage VG to the at least one gating electrode. A method for voltage controlled metabolism in a bio-reactive electrostatic cell that includes applying a gating voltage VG to at least one gating electrode is also described. The rate of a metabolic process may be controlled by altering at least one of the magnitude and polarity of the applied gating voltage VG. The method for voltage controlled metabolism may further be used to treat cancer and/or increase the rate of ethanol production by fermentation.Type: ApplicationFiled: January 6, 2015Publication date: November 17, 2016Inventor: Siu-Tung Yau
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Patent number: 9496041Abstract: A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.Type: GrantFiled: April 22, 2015Date of Patent: November 15, 2016Assignee: PHISON ELECTRONICS CORP.Inventors: Wei Lin, Yu-Cheng Hsu, An-Cheng Liu, Siu-Tung Lam
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Patent number: 9465584Abstract: A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents.Type: GrantFiled: March 11, 2014Date of Patent: October 11, 2016Assignee: PHISON ELECTRONICS CORP.Inventors: Wei Lin, Yu-Cheng Hsu, Siu-Tung Lam
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Publication number: 20160276604Abstract: A compound having the structure of Formula I is disclosed, where Ga has the structure and Gb has the structure In the structure of Formula I, Z is selected from Si and Ge; Xa and Xb are independently selected from the group consisting of O, S, and Se; the Y and Z atoms forming the six-membered rings in Formula I, Ga, and Gb are each independently selected from C or N; each R1, R2, Ra1, Ra2, Rb1, and Rb2 is independently selected from a variety of substituents; at least one Ra1 is La-Aa; at least one Rb1 is Lb-Ab; Aa and Ab are each independently selected from carbazole, dibenzofuran, dibenzothiophene, dibenzoselenophene, triphenylene, and nitrogen-substituted variants thereof, which are optionally further substituted; and La and Lb are each independently an organic linker. Formulations and devices, such as an OLEDs, that include the compound of Formula I are also described.Type: ApplicationFiled: March 16, 2015Publication date: September 22, 2016Applicant: Universal Display CorporationInventors: Raymond KWONG, Kit Yee TSANG, Siu Tung LAM
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Publication number: 20160240256Abstract: A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.Type: ApplicationFiled: April 22, 2015Publication date: August 18, 2016Inventors: Wei Lin, Yu-Cheng Hsu, An-Cheng Liu, Siu-Tung Lam
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Publication number: 20160233424Abstract: A compound including a ligand L1 of Formula I, is described. In Formula I: rings A and B each independently represent a 5-membered or 6-membered carbocyclic or heterocyclic ring; X, Y, Z, and W are either carbon or nitrogen; R1 to R6 are selected from a variety of substituents, where adjacent substituents can be joined to form a fused ring; ligand L1 is coordinated to a metal M by X-M and Y-M bonds; and ligand L1 is optionally linked with other ligands to produce a tridentate, tetradentate, pentadentate or hexadentate ligand. Formulations and devices, such as an OLEDs, that include the compound that include a ligand L1 of Formula I are also described.Type: ApplicationFiled: October 29, 2015Publication date: August 11, 2016Applicant: Universal Display CorporationInventors: Raymond KWONG, Chi Hang Lee, Siu Tung Lam, Kit Yee Tsang, Geza Szigethy
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Publication number: 20160232053Abstract: The present disclosure provides a memory management method for a rewritable non-volatile memory module. The rewritable non-volatile memory module includes physical programming units, each of which includes multiple bits. The memory management method includes: identifying a first physical programming unit by applying a predetermined read voltage, where the first physical programming unit is identified as in a fully-erased status; identifying a second and a third physical programming units which are programmed before the first physical programming unit; acquiring status data of the second and the third physical programming unit; computing a difference of the status data between the second and the third physical programming unit; if the difference is larger than a threshold, identifying the second physical programming unit as in a program failure status.Type: ApplicationFiled: April 23, 2015Publication date: August 11, 2016Inventors: Wei Lin, Yu-Cheng Hsu, An-Cheng Liu, Siu-Tung Lam