Patents by Inventor SIYURANGA O. KOSWATTA
SIYURANGA O. KOSWATTA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11088278Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: GrantFiled: January 11, 2019Date of Patent: August 10, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Patent number: 11024750Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.Type: GrantFiled: September 16, 2019Date of Patent: June 1, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Zhihong Chen, Shu-Jen Han, Siyuranga O. Koswatta, Alberto Valdes Garcia
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Patent number: 10636917Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.Type: GrantFiled: December 13, 2017Date of Patent: April 28, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Zhihong Chen, Shu-Jen Han, Siyuranga O. Koswatta, Alberto Valdes Garcia
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Publication number: 20200014825Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: ZHIHONG CHEN, SHU-JEN HAN, SIYURANGA O. KOSWATTA, ALBERTO VALDES GARCIA
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Patent number: 10295589Abstract: Embodiments include methods, and systems of an integrated circuit having electromigration wearout detection circuits. Integrated circuit may include a detection element and a reference element. Detection element is subject to normal operation current. Reference element is not subject to normal operation current. A resistance of detection element is monitored to detect electromigration wearout. The electromigration wearout detection monitoring circuit may be configured to perform: periodically measuring resistance of detection element, calculating resistance change of detection element over a predetermined time period, comparing resistance change of detection element calculated to a predetermined safety threshold, and take mitigation actions when resistance change of detection element exceeds predetermined safety threshold. The mitigation actions may include switching to a redundant circuit of the integrated circuit, shutting down the integrated circuit, and sending a signal to initiate a service call.Type: GrantFiled: March 15, 2016Date of Patent: May 21, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Keith A. Jenkins, Siyuranga O. Koswatta
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Publication number: 20190148545Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: ApplicationFiled: January 11, 2019Publication date: May 16, 2019Inventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Patent number: 10249754Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: GrantFiled: February 21, 2018Date of Patent: April 2, 2019Assignee: International Business Machines CorporationInventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Patent number: 10224429Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: GrantFiled: July 18, 2017Date of Patent: March 5, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Patent number: 10103083Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.Type: GrantFiled: July 25, 2017Date of Patent: October 16, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Siyuranga O. Koswatta, Sungjae Lee, Lan Luo, Scott K. Springer, Richard A. Wachnik
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Publication number: 20180182892Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: ApplicationFiled: February 21, 2018Publication date: June 28, 2018Inventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Patent number: 9954101Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: GrantFiled: June 15, 2016Date of Patent: April 24, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Publication number: 20180102438Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.Type: ApplicationFiled: December 13, 2017Publication date: April 12, 2018Inventors: ZHIHONG CHEN, SHU-JEN HAN, SIYURANGA O. KOSWATTA, ALBERTO VALDES GARCIA
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Patent number: 9906213Abstract: An inverter circuit for reducing runaway current due to applied voltage stress and temperature conditions comprises: first and second field effect transistor (FET) devices of opposite device polarities for driving a connected second stage device having a connected 2nd stage first and second FET devices, each 2nd stage device having a respective input gate terminal. The first FET and second FET devices have a respective output drive terminal, a first conductive structure connects the first FET output drive terminal to the input gate terminal of each the first and second connected FET device and further connects the first FET output drive terminal to the second FET output drive terminal through a ballasting resistor device. A second separate conductive structure connects the second FET output drive terminal to the input gate terminals and includes a path further connecting the second FET output drive terminal to the first FET output drive terminal through the ballasting resistor device.Type: GrantFiled: November 6, 2015Date of Patent: February 27, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Gregory G. Freeman, Siyuranga O. Koswatta
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Publication number: 20180053707Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.Type: ApplicationFiled: July 25, 2017Publication date: February 22, 2018Applicant: GLOBALFOUNDRIES INC.Inventors: Siyuranga O. Koswatta, Sungjae Lee, Lan Luo, Scott K. Springer, Richard A. Wachnik
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Patent number: 9893212Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.Type: GrantFiled: November 8, 2011Date of Patent: February 13, 2018Assignee: International Business Machines CorporationInventors: Zhihong Chen, Shu-Jen Han, Siyuranga O. Koswatta, Alberto Valdes Garcia
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Publication number: 20170365714Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: ApplicationFiled: July 18, 2017Publication date: December 21, 2017Inventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Publication number: 20170365712Abstract: A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop layer of a second semiconductor material present within the first of the source region and the drain region. A channel semiconductor material is present atop the first of the source region and the drain region. A second of the source and the drain region is present atop the channel semiconductor material. The semiconductor device may be a vertically orientated fin field effect transistor or a vertically orientated tunnel field effect transistor.Type: ApplicationFiled: June 15, 2016Publication date: December 21, 2017Inventors: Huiming Bu, Liying Jiang, Siyuranga O. Koswatta, Junli Wang
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Patent number: 9773717Abstract: A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.Type: GrantFiled: August 22, 2016Date of Patent: September 26, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Siyuranga O. Koswatta, Sungjae Lee, Lan Luo, Scott K. Springer, Richard A. Wachnik
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Publication number: 20170269152Abstract: Embodiments include methods, and systems of an integrated circuit having electromigration wearout detection circuits. Integrated circuit may include a detection element and a reference element. Detection element is subject to normal operation current. Reference element is not subject to normal operation current. A resistance of detection element is monitored to detect electromigration wearout. The electromigration wearout detection monitoring circuit may be configured to perform: periodically measuring resistance of detection element, calculating resistance change of detection element over a predetermined time period, comparing resistance change of detection element calculated to a predetermined safety threshold, and take mitigation actions when resistance change of detection element exceeds predetermined safety threshold. The mitigation actions may include switching to a redundant circuit of the integrated circuit, shutting down the integrated circuit, and sending a signal to initiate a service call.Type: ApplicationFiled: March 15, 2016Publication date: September 21, 2017Inventors: Keith A. Jenkins, Siyuranga O. Koswatta
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Publication number: 20170133923Abstract: An inverter circuit for reducing runaway current due to applied voltage stress and temperature conditions comprises: first and second field effect transistor (FET) devices of opposite device polarities for driving a connected second stage device having a connected 2nd stage first and second FET devices, each 2nd stage device having a respective input gate terminal. The first FET and second FET devices have a respective output drive terminal, a first conductive structure connects the first FET output drive terminal to the input gate terminal of each the first and second connected FET device and further connects the first FET output drive terminal to the second FET output drive terminal through a ballasting resistor device. A second separate conductive structure connects the second FET output drive terminal to the input gate terminals and includes a path further connecting the second FET output drive terminal to the first FET output drive terminal through the ballasting resistor device.Type: ApplicationFiled: November 6, 2015Publication date: May 11, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Gregory G. Freeman, Siyuranga O. Koswatta