Abstract: The light detector includes: a substrate including at least one light receiving area and a light incident surface on which light is incident; and a meta-lens formed on the light incident surface of the substrate to focus the light incident on the light incident surface. When viewed from the thickness direction (Z-axis direction) of the substrate, the meta-lens is formed so as to overlap both an adjacent region adjacent to the light receiving area and a peripheral region that is continuous with the adjacent region and is a region inside the light receiving area along the outer edge of the light receiving area. When viewed from the Z-axis direction, a non-forming region in which the meta-lens is not formed is provided in a region overlapping a central region of the light receiving area in the light incident surface.

Abstract: A light detector includes a semiconductor light detection element having a plurality of light detection units disposed two-dimensionally and readout wirings and a plurality of metalenses disposed on a surface of the semiconductor light detection element. Each of the plurality of light detection units has an avalanche photodiode including a first semiconductor region and a second semiconductor region forming a PN junction with the first semiconductor region, and a quenching resistor including one end electrically connected to the second semiconductor region and another end electrically connected to the readout wiring. The plurality of metalenses are disposed two-dimensionally to overlap the plurality of light detection units, and converge light such that a convergence spot is located at a position which is within the first semiconductor region and which is separated by a predetermined distance from a boundary between the first semiconductor region and the second semiconductor region.

Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

Abstract: The present disclosure relates to a metasurface structural body or the like having a structure for achieving desired optical characteristics. The metasurface structural body includes a base member having a first surface and a second surface opposing each other, and a plurality of antennas as a plurality of fine structures arranged along the first surface. The base member has a base portion and an adjacent portion. The antennas each has a first refractive index and an antenna end surface constituting a part of the first surface. The adjacent portion is provided such that a part thereof is positioned between the antennas, the adjacent portion having a second refractive index different from the first refractive index and an adjacent-portion end surface constituting a remaining part of the first surface. The antenna end surfaces and the adjacent-portion end surface form a flat surface as the first surface.

Abstract: The light detector includes a light detection substrate having at least one light receiving region and a light incident surface on which a detection target light is incident, and a meta-lens including a plurality of unit structures arranged in a grid pattern and disposed on the light incident surface to focus the detection target light. When viewed in a thickness direction of the light detection substrate, an opening region in which no unit structure is formed is provided in a region including a center of the meta-lens.

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: An embodiment relates to a light source module dynamically controlling a phase distribution of light. The light source module includes a semiconductor stack portion. The semiconductor stack portion includes a stacked body including an active layer and a photonic crystal layer causing ?-point oscillation, and includes a phase synchronization portion and an intensity modulation portion which are arranged in a Y-direction as one resonance direction of the photonic crystal layer. The stacked body in the intensity modulation portion has M (?2) pixels each arranged in an X-direction and including N1 (?2) subpixels. A length of a region including consecutive N2 (?2, ?N1) subpixels among the N1 subpixels, defined in the X-direction, is smaller than an emission wavelength of the active layer. The light source module outputs laser light from each M pixel included in the intensity modulation portion in a direction intersecting both X- and Y-directions.

Abstract: This disclosure relates to a spatial light modulator, etc., the spatial light modulator being capable of dynamically controlling the phase distribution of light, and provided with a structure having a smaller pixel arrangement period and suitable for high-speed operation. The spatial light modulator includes a substrate. The substrate has a front surface, a back surface, and through-holes arranged one-dimensionally or two-dimensionally and penetrating between the front surface and the back surface. The spatial light modulator further includes layered structures each covering the inner walls of the through-holes. Each layered structure includes a first electroconductive layer on the inner wall, a dielectric layer on the first electroconductive layer and having optical transparency, and a second electroconductive layer on the dielectric layer and having optical transparency. At least one of the first and second electroconductive layers is electrically isolated for each group including one or more through-holes.

Abstract: A radiation detector of one embodiment includes: a scintillator configured to generate first scintillation light having a first peak wavelength and second scintillation light having a second peak wavelength in response to radiation incidence; a photodetection unit configured to detect the scintillation light generated by the scintillator; and a filter layer disposed between the scintillator and the photodetection unit and configured to selectively block the first scintillation light. The filter layer has a metasurface structure.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.

Abstract: The present disclosure relates to a metalens unit including a metalens having a structure for reducing a thickness. The metalens unit includes a metalens and a holding portion for the metalens. The metalens includes a base portion and a first antenna portion. The first antenna portion is constituted by a plurality of first antennas each having a first refractive index and a first intermediate portion having a second refractive index and positioned between the plurality of first antennas. A first antenna portion is formed such that one-dimensional arrangement constituted by some of end surfaces of the plurality of first antennas includes a pattern in which at least one of a size of the end surface, a shape of the end surface, and an arrangement pitch is changed along a reference line.

Abstract: An optical apparatus includes a stage configured to support a semiconductor device, a solid immersion lens configured to be brought into contact with the semiconductor device supported by the stage, and a photodetector disposed at a position opposite to the stage with respect to the solid immersion lens on an optical path passing through the solid immersion lens. The solid immersion lens includes a base part having a first surface to be brought into contact with the semiconductor device and a second surface opposite to the first surface, and a meta-lens disposed on the second surface.

Abstract: The present embodiment relates to a variable-phase device including a new device structure that can solve various problems. The variable-phase device includes M pixels (where M is an integer of 2 or more) arrayed one-dimensionally or two-dimensionally, the M pixels each emitting light or modulating light. The array pitch of the M pixels is less than the wavelength of incident light and is constant along a predetermined direction. Each of the M pixels includes N sub-pixels (where N is an integer of 2 or more) each having a structure allowing the phase of outgoing light to vary. With respect to each of the M pixels, N partial light beams outputted from the N sub-pixels are combined into light having a single phase in the far field.

Abstract: A method for producing an optical element includes: disposing a joint layer on a substrate; forming a first portion and a second portion in a second surface of the joint layer; and forming a plurality of structural bodies, which are made of a dielectric, on the second surface of the joint layer. The joint layer has a first surface facing the substrate, and the second surface located on a side opposite the first surface. The first portion is covered with a resist layer, and the second portion is exposed from the resist layer. After the dielectric is laminated on at least the second portion, the resist layer is removed to form the plurality of structural bodies on the second surface.

Abstract: A method for producing an optical element includes: forming a resist layer on a main surface of a substrate; forming a pattern region in the resist layer; forming a groove; forming a dielectric layer covering the pattern region; and forming an optical functional portion. The pattern region is formed in the resist layer. The groove is formed in a portion corresponding to a periphery of the pattern region as viewed in a direction orthogonal to the main surface. A dielectric is deposited to form the dielectric layer. After the dielectric layer covering the pattern region is formed, the resist layer is removed to form the optical functional portion at a position where the pattern region is disposed on the main surface. The optical functional portion is made of the dielectric.