Abstract: A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

Abstract: A semiconductor device includes: plural conductor portions formed on an insulating substrate; a semiconductor element disposed on one of the plural conductor portions on the insulating substrate; a support member that is disposed at a predetermined distance from one of the plural conductor portions on the insulating substrate; a columnar pin terminal that is supported by the support member and is connected to the one of the plural conductor portions on the insulating substrate from which the support member is disposed at the predetermined distance; and a sealing resin that seals the insulating substrate, the plural conductor portions, the semiconductor element, and the support member. The support member has a through-hole having a polygonal shape and penetrating in a plate thickness direction of the support member, and the pin terminal is supported by the support member in a state in which the pin terminal is inserted through the through-hole.

Abstract: A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal having a flat plate-shape that is connected to a first electrode of the semiconductor element; a second terminal having a flat plate-shape that is connected to the first conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, and the semiconductor element. Each of the first terminal and the second terminal includes: an inner terminal portion disposed inside the sealing resin; and an outer terminal portion disposed in a state of being exposed to an exterior of the sealing resin, and a female thread portion is provided in the outer terminal portion of each of the first terminal and the second terminal.

Abstract: A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal that is connected to a first electrode of the semiconductor element; a second terminal that is connected to the first conductor portion; a connection member electrically connecting a control electrode of the semiconductor element and the second conductor portion to each other; a support member that is disposed at a predetermined distance from the second conductor portion; a pin terminal having that is supported in a state of being inserted through the support member and connected to the second conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, the semiconductor element, the connection member, and the support member.

Abstract: A terminal member connected to a connection target portion includes: a bent portion bent toward the connection target portion; and a tip connection portion provided at a tip part of the bent portion, in which the tip connection portion is connected to the connection target portion via a conductive bonding material.

Abstract: An electronic device has a sealing part 90, a first terminal 11 projecting outward from a first side surface of the sealing part 90, a second terminal 13 projecting outward from a second side surface different from the first side surface of the sealing part 90, an electronic element 95 provided inside the sealing part 90, and a head part 40 coupled to the first terminal 11 and the second terminal and connected to a front surface of the semiconductor element 95 via a conductive adhesive 75.

Abstract: A semiconductor device according to the present invention includes: a circuit board; a semiconductor element having a main electrode; a metal frame; and a metal plate having a flat plate shape, the metal plate being disposed between the metal frame and the main electrode, wherein the metal plate and a conductive bonding material, form a stress relaxation structure which relaxes a stress applied to metal plate and the conductive bonding material, disposed between the metal frame and the semiconductor element, and the stress relaxation structure is configured such that a thickness of the metal plate is smaller than a thickness of the metal frame, and at least one convex portion is formed on the metal plate at a position which corresponds to the main electrode. The semiconductor device according to the present invention can relax a stress applied to a conductive bonding material between a semiconductor element and a metal frame even when a relatively thick metal frame is used.

Abstract: A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.

Abstract: An electronic device has a sealing part 90, a first main terminal 11 protruding outward from the sealing part 90, a second main terminal 12 protruding outwardly from the sealing part, an electronic element 95 provided in the sealing part and having a front surface electrically connected to the first main terminal 11 and a back surface electrically connected to the second main terminal 12, a head part 40 connected to the front surface of the electronic element 95, a sensing terminal 13 protruding to an outside from the sealing part 90 and used for sensing and a connection part 35 integrally formed with the head part 40 and electrically connected to the sensing terminal 13. A current flowing through the sensing terminal 13 and the connection part 35 among a sensing current path does not overlap a main current path flowing through the second main terminal 12, the electronic element 95 and the first main terminal 11.

Abstract: A semiconductor device includes: an inner substrate on which a semiconductor chip is mounted, and has a surface on which terminals including electric path terminals are formed; a lead frame which has a chip connecting electrode portion which is electrically connected to a surface of the semiconductor chip via a conductive bonding member, substrate connecting electrode portions which are electrically connected to the electric path terminals of the inner substrate, and horizontal surface support portions which bulge to the outside from the chip connecting electrode portion or the substrate connecting electrode portions; and pin terminals which are mounted upright over the inner substrate in a direction perpendicular to flat surfaces of the substrate connecting electrode portions of the lead frame, wherein the horizontal surface support portions bulge to the outside of the inner substrate.

Abstract: A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.

Abstract: In a first step of a method of manufacturing a semiconductor device, a portion to be the first lead frame is formed by selectively punching a metal plate, furthermore, notch portions depressed in the reference direction are formed on both side surfaces of a portion, of the first lead frame where the first bent portion is formed, in line contact with the first conductive layer in the reference direction; in the second step of the method, a first bent portion is formed by bending the one end of the first lead frame so as to protrude downward along the reference direction; and in the third step of the method, the upper surface of the first conductive layer and the lower surface of the first bent portion of the first lead frame are joined at the end of the substrate, by the first conductive bonding material, furthermore, the upper surface of the first conductive layer and the notch portions of the first bent portion are joined, by embedding a part of the first conductive bonding material in the notch portions.

Abstract: The one end portion of the connector of the semiconductor device includes: a horizontal portion; a first inclined portion that is connected to the horizontal portion and is located closer to the tip end side of the one end than the horizontal portion, and the first inclined portion having a shape inclined downward from the horizontal portion; and a control bending portion that is connected to the first inclined portion and positioned at the tip of the one end portion, and the control bending portion bent downwardly along the bending axis direction. The lower surface of the control bending portion is in contact with an upper surface of the second terminal.

Abstract: A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

Abstract: A semiconductor device includes: a circuit unit including a semiconductor chip; a plurality of pin terminals formed in a rod shape extending in a same direction from the circuit unit and electrically connected to the circuit unit; a sealing resin portion sealing the circuit unit and first portions of the plurality of pin terminals positioned on a side of the circuit unit; and a plurality of covering resin portions integrally extending from an outer surface of the sealing resin portion from which second portions of the plurality of pin terminals protrude, the plurality of covering resin portions being formed in a cylindrical shape respectively covering base end portions of the second portions of the plurality of pin terminals, which are positioned on a side of the sealing resin portion.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90 and a connection body 50 having a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75. The head part 40 has a second projection protruding 42 toward the electronic element 95 and a first projection 41 protruding from the second projection 42 toward the electronic element 95.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90, a first terminal that projects outward from the sealing part 90 and a connector 51 that has a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75, and a proximal end part 45 connected to the first terminal via a conductor layer 75. The head part 40 has a single first projection part 41 that projects toward the electronic element 95. The first projection part 41 sinks into the conductive adhesive 75 and comes into point contact with the front surface of the electronic element 95. The proximal end part 45 has a plurality of protrusion parts 49 or a support surface 46, contacting the conductor layer 70.

Abstract: A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.

Abstract: A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.