Abstract: A leadframe for use in fabricating a no lead semiconductor package contains connecting bars between individual electrical contact pads. For embodiments having a die pad, the leadframe further includes connecting bars between the contact pads and the die pad. The lower surfaces of the connecting bars are coplanar with the lower surfaces of the contact pads and/or the die pad, and the upper surfaces of the connecting bars are recessed with respect to the upper surfaces of the contact pads and/or the die pad. The semiconductor package is fabricated by encapsulating the die and the leadframe in a molding compound and then removing the connecting bars. The leadframe is typically formed by half etching a metal sheet to form the connecting bars. The connecting bars are removed from the encapsulated package by a selected cutting, sawing, or etching means, based on a predetermined pattern.

Abstract: A process for forming semiconductor packages comprises partially etching a leadframe matrix, encapsulating it with mold compound, placing a semiconductor die in a leadframe unit and singulating the leadframe matrix. A system for forming semiconductor packages comprises means for partially etching a leadframe matrix, means for encapsulating it with mold compound, means for placing a semiconductor die in a leadframe unit and means for singulating the leadframe matrix.

Abstract: A method of plating a plurality of semiconductor devices includes: applying an electrical power source to an anode terminal and a cathode terminal; placing the plurality of semiconductor devices on a non-conductive platform in a plating solution; moving conductive parts across surfaces of the semiconductor devices to be plated, wherein the conductive parts electrically connect the surfaces of the semiconductor devices to the cathode; and wherein plating particles connected to the anode terminal move to and plate the surfaces of the semiconductor devices.

Abstract: A package and method of making thereof. The package includes a first plated area, a second plated area, a die, a bond, and a molding. The die is attached to the first plated area, and the bond couples the die to the first and/or the second plated areas. The molding encapsulates the die, the bonding wire, and the top surfaces of the first and second plated areas, such that the bottom surfaces of the first and second plated areas are exposed exterior to the package.

Abstract: A method of plating a plurality of semiconductor devices includes: applying an electrical power source to an anode terminal and a cathode terminal; placing the plurality of semiconductor devices on a non-conductive platform in a plating solution; moving conductive parts across surfaces of the semiconductor devices to be plated, wherein the conductive parts electrically connect the surfaces of the semiconductor devices to the cathode; and wherein plating particles connected to the anode terminal move to and plate the surfaces of the semiconductor devices.

Abstract: A method of singulating semiconductor devices applies a blade to a molded strip that includes the semiconductor device. The blade generates a kerf at a contact point between the blade and the molded strip. The kerf is filled with a plurality of particles. The kerf separates the semiconductor device from the molded strip. The method cools the blade by using a synthetic lubricant. The method lubricates the blade by using the synthetic lubricant. The method rinses the kerf by using the synthetic lubricant. Rinsing the kerf removes a substantial quantity of the particles from the kerf. A system singulates semiconductor devices from a molded strip by using a blade, a temperature control device, and a synthetic lubricant. The blade singulates the semiconductor device from the molded strip. The temperature control device applies the synthetic lubricant to the blade. The synthetic lubricant cools, lubricates, or rinses the blade, or a combination thereof, during a singulation process.

Abstract: A method of plating a plurality of semiconductor devices includes: applying an electrical power source to an anode terminal and a cathode terminal; placing the plurality of semiconductor devices on a non-conductive platform in a plating solution; moving conductive parts across surfaces of the semiconductor devices to be plated, wherein the conductive parts electrically connect the surfaces of the semiconductor devices to the cathode; and wherein plating particles connected to the anode terminal move to and plate the surfaces of the semiconductor devices.

Abstract: A semiconductor package contains a metal leadframe that has been specially treated by roughening it with a chemical etchant. The roughening process enhances the adhesion between the leadframe and the molten plastic during the encapsulation of the leadframe and thereby reduces the tendency of the package to separate when exposed to moisture and numerous temperature cycles. In one embodiment, the leadframe made of copper is roughened with a chemical etchant that contains sulfuric acid and hydrogen peroxide.

Abstract: A semiconductor package contains a metal leadframe that has been specially treated by roughening it with a chemical etchant. The roughening process enhances the adhesion between the leadframe and the molten plastic during the encapsulation of the leadframe and thereby reduces the tendency of the package to separate when exposed to moisture and numerous temperature cycles. In one embodiment, the leadframe made of copper is roughened with a chemical etchant that contains sulfuric acid and hydrogen peroxide.

Abstract: A series of grooves are etched in a leadframe to be used in fabricating a group of semiconductor packages at locations where the leadframe will later be sawed to separate the semiconductor packages. In variations of the process, the grooves may be wider or narrower than the kerf of the saw cuts and may be formed on the side of the leadframe facing towards or away from the entry of the saw blade.

Abstract: A flat no-lead semiconductor die package contains a plurality of studs that protrude from the bottom surface of the capsule and act as electrical contacts, allowing the package to be mounted on a flat surface such as a printed circuit board, while permitting external circuit to be located on the flat surface directly beneath the package. The package may or may not contain a die-attach pad. The die may be mounted flip-chip style on the stud contacts and die-attach pad. A method of fabricating the package includes etching an upper portion of a metal sheet through a mask layer, attaching dice at locations on the surface of the metal sheet, forming a layer of molding compound over the dice, etching the lower portion of the metal sheet through a second mask layer, and separating the packages with a dicing saw or punch tool.

Abstract: A semiconductor package contains a metal leadframe that has been specially treated by roughening it with a chemical etchant. The roughening process enhances the adhesion between the leadframe and the molten plastic during the encapsulation of the leadframe and thereby reduces the tendency of the package to separate when exposed to moisture and numerous temperature cycles. In one embodiment, the leadframe made of copper is roughened with a chemical etchant that contains sulfuric acid and hydrogen peroxide.