Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.

Abstract: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Abstract: A controlled-release fertilizer including an inside core of water-soluble fertilizer particle and an outer layer coating material, wherein the coating material is a bentonite modified or sodium bentonite modified waterborne polymer; and a preparation method including: weighing the fertilizer core particle and the modified waterborne polymer emulsion according to the amount, preparing a semi-processed coating controlled-release fertilizer by using a coating machine, and placing the semi-processed coating controlled-release fertilizer in an oven for postprocessing to improve the compactness of the film material.

Abstract: Disclosed is an antibody that specifically binds CD24, or an antigen binding portion thereof. A nucleic acid molecule encoding the antibody or antigen binding portion thereof, an expression vector and a host cell comprising the nucleic acid molecule, a method for expressing the antibody or antigen binding portion thereof, and a method for treating a disease associated with CD24 signaling using the antibody or antigen binding portion thereof are also provided.

Abstract: A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

Abstract: A variety of applications can include an apparatus having a memory device in which, during fabrication of the memory device, processing a dielectric isolation region about an active area of a memory cell is controlled to provide enhanced electric isolation of a data line contact to the memory cell with respect to a cell contact to the memory cell. A portion of the dielectric isolation region can be recessed, creating a corner between the dielectric isolation region and a conductive region, where the conductive region is material for the active area. The corner can be filled with a dielectric material and the data line contact can be formed contacting the dielectric material and coupled to the conductive region. The cell contact can be formed to the memory cell contacting the dielectric material such that the dielectric material is between the cell contact and the data line contact.

Abstract: A method of forming a microelectronic device structure comprises exposing a silicon structure to an etching chemistry at a first bias voltage of greater than about 500 V to form at least one initial trench between sidewalls of features formed in the silicon structure. The method also comprises exposing at least the sidewalls of the features to the etching chemistry at a second bias voltage of less than about 100 V to remove material from the sidewalls to expand the at least one initial trench and form at least one broader trench without substantially reducing a height of the features. Related apparatuses and electronic systems are also disclosed.

Abstract: Disclosed in the embodiments of the present application are a switching processing method and apparatus, and a communication device. The method comprises: when determining that a pre-defined condition is met, a user equipment transmitting, to an edge dispatch node, a domain name system (DNS) resolution request carrying first information, wherein the first information comprises user identifier information, application identifier information, and service continuity demand information; and receiving a DNS resolution response from the edge dispatch node, wherein the DNS resolution response comprises the updated address information of a second edge application server.

Abstract: Methods, systems, and devices for memory cell capacitor structures for three-dimensional memory arrays are described. A memory device may include a memory array including multiple levels of memory cells that are each separated from another level by a respective dielectric layer. A memory cell at a first level of the memory array may include a channel portion and a capacitor operable to store a logic state of the memory cell. A first portion of the capacitor may be located between the channel portion and a voltage source coupled with the memory cell. A second portion of the capacitor may be in a cavity in a dielectric layer between the first level and a second level of the memory array. The second portion of the capacitor may be located between the channel portion and a word line coupled with a channel portion of a second memory cell at the second level.

Abstract: Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.

Abstract: A microelectronic device comprises semiconductive pillar structures each individually comprising a digit line contact region disposed laterally between two storage node contact regions. At least one semiconductive pillar structure of the semiconductive pillar structures comprises a first end portion comprising a first storage node contact region, a second end portion comprising a second storage node contact region, and a middle portion between the first end portion and the second end portion and comprising a digit line contact region, a longitudinal axis of the first end portion oriented at an angle with respect to a longitudinal axis of the middle portion. Related microelectronic devices, electronic systems, and methods are also described.

Abstract: A double-wall multi-structure quartz cylinder device, belonging to the technical field of ion beam etching. The device specifically includes a quartz cylinder outer wall, at least one quartz cylinder inner liner being provided inside the quartz cylinder outer wall, axes of the two coinciding with each other, and a quartz cylinder inner liner support being connected between the quartz cylinder inner liner and the quartz cylinder outer wall. The quartz cylinder outer wall and the bottom of the quartz cylinder inner liner are connected to a grid mesh, most of etching by-products will be sputtered onto an inner surface of the quartz cylinder inner liner through voids of the grid mesh, and less etching by-products will be attached to an inner wall of the quartz cylinder outer wall, such that the whole radio frequency circuit is less affected by contamination.

Abstract: A current sense circuit includes a sense amplifier, a current mirror circuit, a resistor, a low-pass filter, and a capacitor. The sense amplifier is adapted to be coupled to a switching transistor of a DC-DC converter. The current mirror circuit is coupled to the sense amplifier, and is configured to generate a sense current proportional to a current flowing through the switching transistor. The resistor is coupled to the current mirror circuit, and is configured to generate a sense voltage based on the sense current. The low-pass filter is coupled to the resistor, and is configured to average the sense voltage over an averaging interval. The capacitor is coupled to the resistor, and is configured to store the sense voltage in a blanking interval that precedes the averaging interval, and provide a compensation current in the averaging interval.

Abstract: A lifting and rotating platform device includes a closed housing, a rotary shaft, a rotation driving unit, and a lifting driving unit. The closed housing includes an upper housing, a lower housing, and a middle corrugated pipe connected therebetween. The rotary shaft passes through a shaft hole at an upper end of the upper housing. A dynamic seal is between the rotary shaft and the shaft hole. An object bearing platform is at an upper end of the rotary shaft located outside the closed housing. The rotation driving unit is mounted in the upper housing; and is used to drive the rotary shaft to rotate within the shaft hole. The lifting driving unit is mounted in the lower housing; and is used to drive the rotary shaft to ascend or descend in an axial direction.

Abstract: A Faraday shielding device includes an electrically conductive ring and a plurality of electrically conductive petal-shaped assemblies radially and symmetrically on the periphery of the electrically conductive ring. Each electrically conductive petal-shaped assembly includes a plurality of electrically conductive plates and connecting capacitors; the electrically conductive plate are at intervals along the radial direction; a connecting capacitor is between every two adjacent electrically conductive plates.

Abstract: Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.

Abstract: A separated gas inlet structure for blocking plasma backflow includes a gas inlet flange and an upper gas inlet nozzle and a lower gas inlet nozzle made of ceramic materials. The upper gas inlet nozzle is coaxially nested or stacked at the top of the lower gas inlet nozzle; a broken line type gas inlet channel is in the upper gas inlet nozzle and the lower gas inlet nozzle and the gas inlet channel includes an upper axial channel, a radial channel, a lower axial channel and a gas outlet; the radial channel or the lower axial channel is at a mounting matching part of the upper gas inlet nozzle and the lower gas inlet nozzle; and the top of the lower axial channel points to a bottom wall surface of the upper gas inlet nozzle.

Abstract: A Faraday shielding apparatus includes a Faraday shielding plate and a resistance wire attached to the lower end of the Faraday shielding plate; the Faraday shielding plate includes a conductive ring and a plurality of conductive petal-shaped members radially symmetrically connected to the outer periphery of the conductive ring; and an insulating and thermally conductivity layer is on the outer surface of the resistance wire. During the etching process, the heating circuit and the resistance wire are conductively connected, increasing the temperature of the resistance wire when it is energized. The Faraday shielding plate is between a radio frequency coil and the resistance wire to form a shield. The output terminal of the heating power supply is filtered by way of a filter circuit unit, then is connected to the resistance wire, preventing coupling between the radio frequency coil and the resistance wire.