Patents by Inventor Song Xue

Song Xue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100255349
    Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 ?·?m2.
    Type: Application
    Filed: June 16, 2010
    Publication date: October 7, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Zheng Gao, Brian W. Karr, Song Xue, Eric L. Granstrom, Khuong T. Tran, Yi X. Li
  • Patent number: 7800868
    Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 ?·?m2.
    Type: Grant
    Filed: December 16, 2005
    Date of Patent: September 21, 2010
    Assignee: Seagate Technology LLC
    Inventors: Zheng Gao, Brian W. Karr, Song Xue, Eric L. Granstrom, Khuong T. Tran, Yi X. Li
  • Publication number: 20100227202
    Abstract: A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.
    Type: Application
    Filed: March 4, 2009
    Publication date: September 9, 2010
    Inventors: Kaizhong Gao, Haiwen Xi, Song Xue
  • Patent number: 7791925
    Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: September 7, 2010
    Assignee: Seagate Technology, LLC
    Inventors: Shaoping Li, Insik Jin, Zheng Gao, Eileen Yan, Kaizhong Gao, Haiwen Xi, Song Xue
  • Patent number: 7781597
    Abstract: The present invention provides an efficient, safe and cost effective way to prepare 5-(4-methyl-1H-imidazol-1-yl)-3-(trifluoromethyl)-benzenamine which is a key intermediate for the preparation of substituted pyrimidinylaminobenzamides of formula (II):
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: August 24, 2010
    Assignee: Novartis AG
    Inventors: Stephan Abel, Murat Acemoglu, Bernhard Erb, Christoph Krell, Joseph Sclafani, Mark Meisenbach, Mahavir Prashad, Wen-Chung Shieh, Song Xue
  • Publication number: 20100141810
    Abstract: The invention relates to a method for bad pixel classification for an image sensor having a plurality of sensing elements. The method includes capturing a plurality of images using the image sensor, determining based on a pre-determined criterion, using an image of the plurality of images and a threshold value selected from one or more pre-determined threshold values, whether a sensing element in the image sensor is defective to generate a vote, wherein a threshold parameter associated with the pre-determined criterion is set to the threshold value, tallying the vote to generate a voting count by performing iterations of the determining step using different images of the plurality of images and different threshold values of the one or more pre-determined threshold values, and classifying the sensing element as a bad pixel if the voting count exceeds a pre-determined classification threshold.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 10, 2010
    Applicant: ProImage Technology
    Inventors: LinCheng Wang, ChengLun Chang, Song Xue
  • Publication number: 20100141822
    Abstract: An analog multiplexer is configured to multiplex a plurality of input analog signal channels into a single output analog signal channel. The analog multiplexer comprises a plurality of input sampling circuits associated with respective ones of the input analog signal channels and an amplifier having an input controllably connectable in turn to each of the input sampling circuits. The analog multiplexer is further configured to connect at least a given one of the input analog signal channels to a sampling element of its corresponding input sampling circuit at a predetermined time prior to connecting the sampling element of that input sampling circuit to the input of the amplifier. The predetermined time is less than a full clock cycle of a sampling clock of the amplifier. The analog multiplexer may be implemented in readout circuitry coupled to a pixel array in an image sensor.
    Type: Application
    Filed: December 8, 2008
    Publication date: June 10, 2010
    Inventor: Song Xue
  • Publication number: 20100135061
    Abstract: In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.
    Type: Application
    Filed: December 2, 2008
    Publication date: June 3, 2010
    Inventors: Shaoping Li, Kaizhong Gao, Insik Jin, Song Xue, Haiwen Xi, Zheng Gao, Eileen Yan
  • Publication number: 20100118579
    Abstract: Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.
    Type: Application
    Filed: November 12, 2008
    Publication date: May 13, 2010
    Applicant: Seagate Technology LLC
    Inventors: Harry Hongyue Liu, Haiwen Xi, Antoine Khoueir, Song Xue
  • Publication number: 20100110758
    Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
    Type: Application
    Filed: October 31, 2008
    Publication date: May 6, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Shaoping Li, Inisk Jin, Zheng Gao, Eileen Yan, Kaizhong Gao, Haiwen Xi, Song Xue
  • Patent number: 7709657
    Abstract: The present invention provides an efficient, safe and cost effective way to prepare 5-(4-methyl-1H-imidazol-1-yl)-3-(trifluoromethyl)-benzenamine which is an intermediate for the preparation of substituted pyrimidinylaminobenzamides of formula (II):
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: May 4, 2010
    Assignee: Novartis AG
    Inventors: Murat Acemoglu, Berthold Schenkel, Wen-Chung Shieh, Song Xue, Erich Widmer, Pedro Garcia Fuentes, Jose Martin Medina, Francisco Vicente Baños
  • Publication number: 20100075599
    Abstract: Devices are proposed for use in nanoscale data transfer and exchange between electronic components. Spin wave generators translate an input signal charge-carrier based signal to spin waves within a ferromagnetic stripe. The spin waves propagate along the ferromagnetic stripe and are detected by spin wave detectors. Further, signal transfer devices such as a splitter, mixer, and switch are disclosed. Embodiments of the invention provide a solution for replacing copper connections, which is a limiting factor in current and future development of high-performance chips.
    Type: Application
    Filed: September 22, 2008
    Publication date: March 25, 2010
    Inventors: Haiwen Xi, Song Xue, Dexin Wang, Dimitar V. Dimitrov
  • Publication number: 20100034011
    Abstract: Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.
    Type: Application
    Filed: March 27, 2009
    Publication date: February 11, 2010
    Applicant: Seagate Technology, LLC
    Inventors: Haiwen Xi, Kaizhong Gao, Song Xue
  • Publication number: 20090289240
    Abstract: Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer.
    Type: Application
    Filed: May 20, 2008
    Publication date: November 26, 2009
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Xuguang Wang, Shuiyuan Huang, Dimitar Dimitrov, Michael Tang, Song Xue
  • Publication number: 20090289736
    Abstract: Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
    Type: Application
    Filed: May 23, 2008
    Publication date: November 26, 2009
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Haiwen Xi, Dadi Setiadi, Insik Jin, Yang Li, Song Xue
  • Publication number: 20090290408
    Abstract: Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.
    Type: Application
    Filed: May 23, 2008
    Publication date: November 26, 2009
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Xiaohua Lou, Dimitar Dimitrov, Song Xue
  • Patent number: 7509748
    Abstract: The disclosure relates to micro-electromechanical systems (MEMS) and magnetic MEMS sensors. The sensors include a substrate having a surface, a first magnetic field detector positioned on the surface, a second magnetic field detector positioned on the surface proximate to the first magnetic field detector, and a third magnetic field detector positioned on the surface proximate to the first and second magnetic field detectors. Each of the first, second and third magnetic field detector is capable of detecting external magnetic fields that are mutually orthogonal along three directions. In certain embodiments, the magnetic MEMS sensors may be useful as electronic compasses. The disclosure also relates to fabricating a magnetic MEMS device, such as an electronic compass, from or on a single wafer, which includes multiple MEMS sensors.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: March 31, 2009
    Assignee: Seagate Technology LLC
    Inventors: Song Xue, Patrick Ryan, Nurul Amin
  • Patent number: 7436632
    Abstract: A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: October 14, 2008
    Assignee: Seagate Technology LLC
    Inventors: Shaoping Li, Song Xue, Kaizhong Gao, Patrick Ryan
  • Patent number: 7433888
    Abstract: A system and/or methodology that enables schema packaging, distribution and availability. Aspects of the invention employ signing technology to facilitate secure definition of a schema package. The system and/or methodology can also include the schema package as a resource in a client-side assembly thereby guaranteeing that exactly the same infrastructure used to discover the assembly will be leverageable in discovery of the schema package(s). Other aspects can include the schema package as a satellite assemble or as a separate file. In these scenarios, the invention can facilitate constructing and distributing the schema package and information necessary to enable the client to interact with the store with regard to uninstalled schemas.
    Type: Grant
    Filed: November 23, 2005
    Date of Patent: October 7, 2008
    Assignee: Microsoft Corporation
    Inventors: Jason T. Hunter, David J. Nettleton, Song Xue
  • Patent number: 7423826
    Abstract: A readback system includes a magnetic sensor that receives a sensor current. The magnetic sensor senses magnetic bits at a bit frequency and generates a sensor output. The readback system includes a channel circuit that modulates the sensor current at a modulation frequency higher than the bit frequency. The channel circuit samples the sensor output and combines multiple samples of the sensor output per magnetic bit into a combined sample output.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: September 9, 2008
    Assignee: Seagate Technology LLC
    Inventors: Shaoping Li, Jin Insik, Kaizhong Gao, Song Xue, Mike Montemorra, Housan Dakroub, Jason C. Jury