Abstract: A light emitting device includes a light emitting unit and a constant current controller. The light emitting unit includes at least one LED string. The constant current controller is connected to a cathode terminal of the LED string and controls a driving current flowing through the LED string. The constant current controller includes a transistor connected to the cathode terminal of the LED string. A switching unit and a sensing resistor are connected to the transistor. The switching unit connects and disconnects between the sensing resistor and the transistor.

Abstract: A light source device capable of preventing luminance from being decreased, a driving method of the light source device and a display device having the light source device are disclosed. Alight source device includes a plurality of light-emitting diode (“LED”) strings and an LED driving circuit. The LED strings include LEDs emitting lights connected in serial. The LED driving circuit supplies a driving voltage to the LED strings. The LED driving circuit maximizes the driving voltage supplied to the LED strings by using the minimum string current of string currents supplied to each LED string in an initial driving period. The LED driving circuit supplies the maximum driving voltage to the LED strings by blocking a current flowing through a sensing resistor disposed to sense the minimum string current in a normal driving period.

Abstract: Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern.

Abstract: Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern.

Abstract: A light emitting device includes a light emitting unit and a constant current controller. The light emitting unit includes at least one LED string. The constant current controller is connected to a cathode terminal of the LED string and controls a driving current flowing through the LED string. The constant current controller includes a transistor connected to the cathode terminal of the LED string. A switching unit and a sensing resistor are connected to the transistor. The switching unit connects and disconnects between the sensing resistor and the transistor.