Abstract: A method for fabricating a nitride-based semiconductor light-emitting device includes a step (a) of forming a nitride-based semiconductor multi-layer structure (20) including a p-type AldGaeN layer (25) having an m-plane as a growing plane, and a step (b) of forming an Ag electrode (30) so as to be in contact with a growing plane (13) of the p-type AldGaeN layer (25). The step (b) includes a step (b1) of forming the Ag electrode (30) having a thickness in the range of 200 nm or more to 1,000 nm or less, and a step (b2) of heating the Ag electrode (30) to a temperature in the range of 400° C. or more to 600° C. or less.