Abstract: High yield, high reliability, flip-chip integrated circuit (IC) packages are achieved utilizing a combination of heat and pressure to bond flip-chip die and to cure no-flow underfill material. The underfill comprises a filler or low coefficient of thermal expansion (CTE) material to decrease CTE of the cured underfill. The filler material can be selected from the group comprising silica, silicon oxide, silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, or a mixture thereof. The filler material may also increase the viscosity of the uncured underfill and/or increase the modulus of elasticity of the cured underfill. In some method embodiments, a thermocompression bonder is used to simultaneously provide solder bump reflow and underfill curing. Application of various methods to a component package, an electronic assembly, and an electronic system are also described.

Abstract: A semiconductor package comprises a substrate that has a first protruding interconnect and a semiconductor die that has a second protruding interconnect that faces the first protruding interconnect. The package further comprises a spacer provided between the substrate and the die, wherein the spacer comprises a hole filled with liquid metal to couple the first protruding interconnect to the second protruding interconnect.

Abstract: A system for underfilling in a chip package includes an underfill mixture that ameliorates the CTE mismatch that typically exists between a packaged die and a resin-impregnated fiberglass mounting substrate. In one embodiment, the system includes an underfill mixture that alone exhibits a CTE that is characteristic of an inorganic-filled underfill composite previously known. An embodiment is also directed to the assembly of a flip-chip package that uses an underfill mixture.

Abstract: A temperature sustaining flip chip process in which ILD cracking and delamination are lessened. A sequence of substrate prebake, underfill dispense, chip placement, solder reflow and underfill cure operative stages introduces lower thermal-mechanical stress during flip chip packaging.

Abstract: High yield, high reliability, flip-chip integrated circuit (IC) packages are achieved utilizing a combination of heat and pressure to bond flip-chip die and to cure no-flow underfill material. The underfill comprises a filler or low coefficient of thermal expansion (CTE) material to decrease CTE of the cured underfill. The filler material can be selected from the group comprising silica, silicon oxide, silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, or a mixture thereof. The filler material may also increase the viscosity of the uncured underfill and/or increase the modulus of elasticity of the cured underfill. In some method embodiments, a thermocompression bonder is used to simultaneously provide solder bump reflow and underfill curing. Application of various methods to a component package, an electronic assembly, and an electronic system are also described.

Abstract: High yield, high reliability, flip-chip integrated circuit (IC) packages are achieved utilizing a combination of heat and pressure to bond flip-chip die and to cure no-flow underfill material. The underfill comprises a filler or low coefficient of thermal expansion (CTE) material to decrease CTE of the cured underfill. The filler material can be selected from the group comprising silica, silicon oxide, silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, or a mixture thereof. The filler material may also increase the viscosity of the uncured underfill and/or increase the modulus of elasticity of the cured underfill. In some method embodiments, a thermocompression bonder is used to simultaneously provide solder bump reflow and underfill curing. Application of various methods to a component package, an electronic assembly, and an electronic system are also described.

Abstract: Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula:

Abstract: An electronic structure includes an electronic device coupled to a substrate by conductive bumps and ball limiting metallurgy (BLM). Underfill material having filler particles is disposed in a space between the electronic device and the substrate. A weight percentage of the filler particles is at least about 60%. A particle size of at least 90 wt % of the filler particles is less than about 2 ?m and/or the filler particles are coated by an organic coupling agent. Once the underfill material is fully cured, its coefficient of thermal expansion is no more than 30 PPM/° C., and its glass transition temperature is at least 100° C., and its adhesion to a passivation layer of the electronic device, to the substrate and to the electronic device at its edges is such that the electronic structure passes standardized reliability tests without delamination of the ball limiting metallurgy.

Abstract: Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula:

Abstract: A heater for flip chip bonding transfers more heat to the periphery of a die than to the center. This may result in a more even temperature profile along the die and may help prevent epoxy voiding problems.

Abstract: A guided heating apparatus and a method for using the same is provided. The apparatus includes a guiding enclosure, a supporting piece, and an absorbing piece. The guiding enclosure guides and keeps energy from an energy source within the guiding enclosure. The guiding enclosure is made of a material reflective of the energy. The energy source is either one of a microwave source and an infrared source. The supporting piece is detachably coupled with the guiding enclosure and is made of a material transparent to the energy. The absorbing piece is coupled to and supported by the supporting piece within the guiding enclosure. The absorbing piece is made of at least one material that absorbs the energy and transfers the energy to an object to be heated. The absorbing piece has a predetermined composition that controls an energy absorption rate of the absorbing piece.

Abstract: An electronic structure includes an electronic device coupled to a substrate by conductive bumps and ball limiting metallurgy (BLM). Underfill material having filler particles is disposed in a space between the electronic device and the substrate. A weight percentage of the filler particles is at least about 60%. A particle size of at least 90 wt % of the filler particles is less than about 2 ?m and/or the filler particles are coated by an organic coupling agent. Once the underfill material is fully cured, its coefficient of thermal expansion is no more than 30 PPM/° C., and its glass transition temperature is at least 100° C., and its adhesion to a passivation layer of the electronic device, to the substrate and to the electronic device at its edges is such that the electronic structure passes standardized reliability tests without delamination of the ball limiting metallurgy.

Abstract: A method of fabricating a microelectronic package, a package fabricated according to the method, and a system including the package. The method comprises: providing a substrate and a die each having pre-solder bumps thereon; placing a patterned underfill film onto the substrate, the film having a filler therein, being substantially free of added flux and further defining a pattern of through-holes disposed such that corresponding pre-solder bumps of the substrate are exposed through the through-holes after placing the film; placing the die onto the substrate such that pre-solder bumps on the die contact corresponding pre-solder bumps on the substrate; forming solder joints from pre-solder bumps contacting one another; and after forming solder joints, solidifying the film to form the package.

Abstract: The invention provides a heater for flip chip bonding. The heater transfers more heat to the periphery of a die than to the center. This results in a more even temperature profile along the die and helps prevent epoxy voiding problems.

Abstract: Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula:

Abstract: A system may include a first integrated circuit die, no-flow underfill material, and a second integrated circuit die. A first side of the first integrated circuit die may include a first plurality of electrical contacts, and the underfill material may contact the first side of the first integrated circuit die. A first side of the second integrated circuit die may include a second plurality of electrical contacts, and the first side of the second integrated circuit die may also contact the no-flow underfill material.

Abstract: The invention provides a heater for flip chip bonding. The heater transfers more heat to the periphery of a die than to the center. This results in a more even temperature profile along the die and helps prevent epoxy voiding problems.

Abstract: A temperature sustaining flip chip process in which ILD cracking and delamination are lessened. A sequence of substrate prebake, underfill dispense, chip placement, solder reflow and underfill cure operative stages introduces lower thermal-mechanical stress during flip chip packaging.

Abstract: A temperature sustaining flip chip process in which ILD cracking and delamination are lessened. A sequence of substrate prebake, underfill dispense, chip placement, solder reflow and underfill cure operative stages introduces lower thermal-mechanical stress during flip chip packaging.

Abstract: Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula: