Abstract: Disclosed herein are a Schottky barrier diode (SBD) and a method of manufacturing the same. The SBD includes a substrate, an ohmic layer formed on a portion of an upper portion of the substrate, a Schottky layer formed on a portion of an upper portion of the ohmic layer, an insulating layer formed on a portion of the upper portion of the ohmic layer, a low-k material layer formed on a portion of the upper portion of the substrate, and a Schottky metal layer formed on portions of upper portions of the low-k material layer and the insulating layer.

Abstract: Disclosed is a blood-compatible polymer represented by Formula 1. A polymer obtained by grafting a fluorinated methacrylate onto a polyvinylidene fluoride copolymer and provided in one aspect of the present invention is a polymer with blood compatibility, and may provide a blood-compatible material with hydrophobicity. In addition, it is possible to provide a material with controlled contact angle and surface energy properties by controlling the hydrogen fluoride length of the fluorinated methacrylate monomer for modification. Furthermore, it is possible to provide coating with controlled surface properties and blood compatibility through a simple process. Furthermore, it is possible to provide a freestanding polymer film with blood compatibility.

Abstract: Disclosed herein is an apparatus and method for executing a magic state distillation circuit in a logical qubit quantum system. The apparatus outputs a distilled magic state |Y>L by executing a magic state |Y>L distillation circuit in which multiple multi-target CNOT operations are performed in parallel and outputs a distilled magic state |A>L by executing a magic state |A>L distillation circuit in which multiple multi-target CNOT operations are performed in parallel. The magic state |Y>L distillation circuit is configured with three code blocks, code blocks 1 and 2 being configured with multiple multi-target CNOT operations and code block 3 being configured with SL operations and measurement operations, and the magic state |A>L distillation circuit is configured with three code blocks, code blocks 1 and 2 being configured with multiple multi-target CNOT operations and code block 3 being configured with TL+ operations and measurement operations.

Abstract: A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.

Abstract: A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, and an electronic device including the nanoparticle are provided. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit a green light, wherein the semiconductor nanoparticle has a relative mole value of zinc as defined by Equation 1 that is greater than or equal to about 0.25 and less than or equal to about 0.9: Relative ? mole ? value ? of ? zinc = [ Zn ] / ( [ Ag ] + [ In ] + [ Ga ] + [ Zn ] ) Equation ? 1 wherein, in Equation 1, [Ag], [In], [Ga], and [Zn] are molar amounts of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively, and wherein a mole ratio of gallium to indium is greater than about 2.5:1 and less than about 5.6:1.

Abstract: The present disclosure relates to a method and apparatus for representing dynamic neural radiance fields from unsynchronized videos. A method of acquiring a video at an arbitrary viewpoint based on a dynamic neural radiance fields model according to an embodiment of the present disclosure may comprise: inputting one or more videos acquired from one or more views for one scene into the dynamic neural radiance fields model; inputting a time embedding for the one or more videos into the dynamic neural radiance fields model; and rendering the video at the arbitrary viewpoint based on color information and density information output by the dynamic neural radiance fields model. Herein, time synchronization related to the time embedding may be performed by applying an individual time offset learned for each view, for the one or more views.

Abstract: A method and system for generating a target map for training a neural network and obtaining a sound source map regardless of the maximum number of sound sources, having a short computation time for inference, high spatial resolution and high sound source accuracy. The method includes generating grids each having a spacing within a given range at positions where sound sources are present in order to form a sound source map, calculating a result value for each of coordinates of the grids so that the result value is a local maximum at the position of a sound source and the result value decreases depending on the distance from the sound source, arranging the result values at positions on matrices corresponding to the respective coordinates of the grids, and generating a target map having an image form by using the result values arranged in on the matrices.

Abstract: Disclosed herein are an image encoding/decoding method and apparatus. The image decoding method includes acquiring a partitioning index of a current block from a bitstream, and generating a prediction sample of the current block by weighted-summing a prediction sample of a first subblock of the current block and a prediction sample of a second subblock of the current block based on the partitioning index. The partitioning index indicates a partitioning distance and a partitioning direction included in a predefined table.

Abstract: The present invention relates to a video decoding method, according to embodiment of the invention, image decoding method comprises, acquiring a reconstructed luma block of a current block, determining whether a cross-component adaptive loop filter is applied to the current block, acquiring a reconstructed chroma block of the current block, to which an adaptive loop filter is applied, when the cross-component adaptive loop filter is applied to the current block and acquiring a final reconstructed chroma block of the current block, to which the cross-component loop filter is applied, using the reconstructed luma block and the reconstructed chroma block, to which the adaptive loop filter is applied.

Abstract: A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.

Abstract: A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.

Abstract: A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.

Abstract: A waterproof board switch includes a print circuit board, a bottom coverlay, an insulation adhesive film having a dome hole and being thermo-compression bonded to the front surface of the print circuit board, a metal dome inserted into the dome hole, and a top coverlay coupled to the insulation adhesive film and the print circuit board to cover the dome hole and surround sides of the insulation adhesive film and sides of the print circuit board. The top coverlay is thermo-compression bonded to the top of the insulation adhesive film, the sides of the insulation adhesive film, and the sides of the print circuit board by thermo-compression bonding to seal a space on which the metal dome rests, thereby preventing an introduction of contaminant into the metal dome and the print circuit board.

Abstract: Disclosed herein are a pump tower installation structure of a liquefied natural gas (LNG) storage tank and a manufacturing method thereof. The pump tower installation structure of the LNG storage tank includes an adaptor disposed at a predetermined area of an opening portion formed at an inner hull disposed on an upper side of the LNG storage tank, and a cover having through-holes corresponding to pipes of the pump tower installed at the storage tank, and disposed at a remaining area of the opening portion to be connected with the adaptor.

Abstract: A method of manufacturing a waterproof board switch according to the first embodiment comprises the following steps: (A) arranging a plurality of print circuit boards on a board plate, each of the print circuit board having a top pattern on a front surface and a bottom pattern on a rear surface; (B) insulating the rear surface of the print circuit board; (C) forming a board ass'y by thermo-compression bonding an insulation adhesive film having a dome hole to the front surface of the print circuit board; (D) forming a plurality of board holes near both edges of the dome hole on the board ass'y; (E) resting a metal dome on the dome hole such that the metal dome is able to be in contact with the top pattern; (F) arranging a top coverlay having bigger width than the insulation adhesive film on the board ass'y such that the top coverlay covers the dome hole; (G) arranging a thermoplastic resin above the top coverlay, arranging a top jig above the thermoplastic resin, arranging a bottom jig below the board ass'y an

Abstract: Disclosed herein are a pump tower installation structure of a liquefied natural gas (LNG) storage tank and a manufacturing method thereof. The pump tower installation structure of the LNG storage tank includes an adaptor disposed at a predetermined area of an opening portion formed at an inner hull disposed on an upper side of the LNG storage tank, and a cover having through-holes corresponding to pipes of the pump tower installed at the storage tank, and disposed at a remaining area of the opening portion to be connected with the adaptor.

Abstract: The invention relates to a PCB tact switch, and more particularly, to a PCB tact switch having excellent water resistance because same does not have holes on the top and bottom which are open to the outside, capable of preventing erroneous operation through improved contact point safety, and capable of preventing product disengagement through improved fixing strength by being soldered to a substrate.

Abstract: The present invention relates to a stent for intraluminal expansion. The stent for intraluminal expansion comprises an inner stent A, an outer stent B and fixing threads C for fixing these stents as one unit. The outer stent B is inserted over the inner stent A in such a way that the space portions of the inner stent A and the space portions of the outer stent B are alternated with each other, so the outer surface of the inner stent and the inner surface of the outer stent are in close contact with each other, and both ends of the outer stent and inner stent are fixed as one unit by fixing threads C.

Abstract: The present invention relates to a test socket for a semiconductor device, which may correspond to a narrow pitch of terminal interval and high speed test in a simplified structure, thereby reducing manufacturing cost thereof. The test socket for a semiconductor device includes conductive substrates having contact point parts exposed at upper and lower surfaces for contacting the terminals of the semiconductor device and the lead terminals of the test board, and slant parts connecting the contact point parts and facing each other in repetitive arrangement, and an insulating elastic element filled in positions where the slant parts are formed as the contact point parts of the conductive substrate are exposed to the outside so as to fix the conductive substrates.

Abstract: The present invention relates to a test socket for a semiconductor device, which may correspond to a narrow pitch of terminal interval and high speed test in a simplified structure, thereby reducing manufacturing cost thereof. The test socket for a semiconductor device includes conductive substrates having contact point parts exposed at upper and lower surfaces for contacting the terminals of the semiconductor device and the lead terminals of the test board, and slant parts connecting the contact point parts and facing each other in repetitive arrangement, and an insulating elastic element filled in positions where the slant parts are formed as the contact point parts of the conductive substrate are exposed to the outside so as to fix the conductive substrates.