Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract: Provided is a circularly polarizing plate and a display device that includes the circularly polarizing plate. The circularly polarizing plate can be applied to a display device such as an organic light emitting display device to minimize blocking of light in the visible light region affecting image quality while blocking harmful ultraviolet rays appropriately and also has excellent durability.

Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

Abstract: Provided is a vapor deposition apparatus including a first injection unit injecting a first raw gas in a first direction and a first filter unit mounted on the first injection unit. The first filter unit includes a plurality of plates separated from one another in the first direction and disposed in parallel to one another, each of the plurality of plates having holes therein, being detachably coupled with the first filter unit, and having the holes with sizes of horizontal cross-sections gradually increasing in a direction in which the first raw gas moves. Accordingly, a process efficiency of the vapor deposition apparatus may be enhanced.

Abstract: The present disclosure provides a steering control method and system for rear-wheel steering that improves driving stability and yaw responsiveness of a vehicle by controlling rear wheels on the basis of a driving state of a vehicle. The method and system receives a vehicle speed and a front-wheel turning angle and calculates a rear-wheel same/inverse-phase control amount; estimates tire slip angles when the vehicle is driven such that the rear wheels are controlled with the same phase; calculates a final rear-wheel turn control value by reflecting a control weight proportioned to the tire slip angle estimation value to the rear-wheel same-phase control amount; and turns the rear wheels on the basis of the final rear-wheel turn control value.

Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first pate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction, The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) apparatus including a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode.

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

Abstract: A plasma processing device including a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which the antennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.

Abstract: A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

Abstract: The present invention relates to a radical-curable adhesive composition including a radical-polymerizable first compound that includes at least two hydroxyl groups in the molecule, and having hydroxyl value of 500 mg KOH/g or greater, and a polarizing plate and an optical member including the radical-curable adhesive composition.

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.

Abstract: The present invention relates to a polarizing plate including a polarizer, and a protective layer formed on at least one surface of the polarizer, in which the protective layer is a cured product of (A) a first compound represented by the following [Formula 1]; (B) a radical curable second compound including at least one carboxyl group conjugated to an unsaturated double bond between carbons present at a side chain in a molecule thereof; and (C) a radical curable composition including a radical initiator, and a liquid crystal display device including the same.

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.