Abstract: In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: Disclosed herein is an apparatus for controlling a tag including: a communication interface receiving a read request; a tag communicating unit connected to one or more memory tags and transmitting and receiving data; a memory storing instructions for performing reads for the memory tags; and a processor performing a control for the memory tags according to the read request based on the instructions, wherein the instructions include instructions for performing the steps of: transmitting a configuration information request to the memory tags; receiving configuration information from the memory tags; calculating the number of data segment according to the configuration information and transmitting the read request including the number of data segment to the memory tags; and receiving a data segment corresponding to the number of data segment from the memory tags.

Abstract: A system and method for providing learning information for visually impaired people based on a haptic electronic board is disclosed. The system for visually impaired people includes a learning information server in conjunction with a lecture and authoring program; a first information output device (PC) for receiving learning information for people with low vision from the learning information server through a wired/wireless network (LAN or WLAN) and having a viewer program for people with low vision, which is install therein, for providing functions of enlarging and reducing a screen; and a second information output device (haptic electronic board) for accessing to the learning information server through a local wireless network (ZigBee or Bluetooth) by using unique device IDs, converting learning information for blind people received from the learning information server to the haptic electronic board into haptic information, and transferring the haptic information to blind people.

Abstract: A deposition source including: a dopant vaporization source; a first host vaporization source including a first vaporization source unit on a side of the dopant vaporization source and a second vaporization source unit on another side of the dopant vaporization source; and a second host vaporization source including a third vaporization source unit on the side of the dopant vaporization source and arranged in parallel with the first vaporization source unit, and a fourth vaporization source unit on the another side of the dopant vaporization source and arranged in parallel with the second vaporization source unit.

Abstract: A pedal assembly protects a driver, in which a pedal arm 50 is prevented from pivoting to a driver and forced to pivot forward away from the driver in a collision or a rear-end collision, so that it is possible to maximally preclude an injury of the leg of the driver due to the pedal arm 50.

Abstract: The present invention relates to epitopes of the epidermal growth factor receptor (EGFR) and the use thereof. The epitopes provided by the present invention are highly preserved, and located in the domain closely related to binding with an epidermal growth factor (EGF). Therefore, vaccine compositions comprising the epitopes or compositions comprising antibodies to the epitopes may efficiently block a signal transduction caused by binding of EGF and EGRF, and thus can be highly valuably used in treating various diseases such as cancer. An antibody bound to the epitopes of the present invention may efficiently inhibit binding of various EGFR ligands such as not only EGF but also TGF-a, AR, BTC, EPR and HB-EGF, with EGFR, and therefore can be used in treating various diseases resulting from an activation of EGFR caused by binding not only with EGF but also with other EGFR ligands.

Abstract: There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.

Abstract: Disclosed are an earthquake monitoring device and a method of installing the same, which can permit stable and efficient installation and operation on any ground surface with free-field conditions including level and sloped ground conditions, and can provide precise monitoring results of earthquakes. The earthquake monitoring device includes a sensor for sensing vibration; and a base having an upper surface formed into a leveled surface, wherein the sensor is secured to the upper surface, and the base is placed on an excavated ground such that the upper surface of the base is positioned on a ground surface or the sensor on the upper surface of the base intersects the ground surface.

Abstract: A timing signal generation apparatus includes a timing signal generation module suitable for generating a timing signal based on a timing pattern, a timing pattern generation and control module suitable for generating the timing pattern and controlling the timing signal generation module, and an interface module suitable for signal interface with a neighboring device.

Abstract: In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.

Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

Abstract: A driver-protecting brake pedal apparatus may include a pedal member fixed to a dash panel, a hinge bracket, a first end of which may be pivotally coupled to the pedal member, the hinge bracket being selectively separated from the pedal member by an external force in order to maintain a pedal ratio, and a pedal arm rotatably coupled with a second end of the hinge bracket via a pedal hinge.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, and a super junction area that is disposed above the substrate. The super junction area may include pillars of different doping types that are alternately disposed. One of the pillars of the super junction area may have a doping concentration that gradually decreases and then increases from bottom to top in a vertical direction of the semiconductor device.

Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

Abstract: Disclosed herein are a radio frequency identification (RFID) system and an operating method thereof. The RFID system includes an RFID tag and an RFID reader transmitting an initialization command to the RFID tag. The initialization command includes a field selecting a single tag accessing mode and a multi-tag processing mode. The RFID reader performs a single tag authentication procedure, which is a procedure of one-to-one accessing one RFID tag, in the case in which the field is set to the single tag accessing mode.

Abstract: A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

Abstract: There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.