Abstract: Provided is an apparatus for manufacturing a powder alloy used as an anode active material of a secondary battery. The apparatus includes a nozzle unit for melting and spraying an alloy, a cooling unit for cooling down the alloy sprayed from the nozzle unit, a grinding unit for grinding the alloy cooled by the cooling unit, and a first chamber accommodating the nozzle unit, the cooling unit, and the grinding unit, and maintained to be a vacuum state.

Abstract: Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

Abstract: A display apparatus is disclosed. The display apparatus includes a flexible display panel and a shape deforming/maintaining unit. The flexible display panel is configured to operate in a flat mode and in a curved mode. The shape deforming/maintaining unit is on a surface of the flexible display panel. The shape deforming/maintaining unit is configured to deform a shape of the flexible display panel during switching between the flat mode and the curved mode, and to maintain rigidity of the flexible display panel after switching to the flat mode or to the curved mode.

Abstract: A negative active material for a secondary battery that provides high capacity, high efficiency charging and discharging characteristics includes: a silicon single phase; and a silicon-metal alloy phase by which the silicon single phase is bounded, wherein the negative active material comprises 5 to 30 wt % of nickel, 5 to 30 wt % of titanium, and 40 to 90 wt % of silicon, the negative active material has a first peak of the silicon-metal alloy phase in an X-ray diffraction analysis spectrum, the silicon single phase is finely distributed in the silicon-metal single phase by mechanical alloying, and the first peak resulting from the (501) surface of the silicon-metal alloy phase has a greater value than the first peak resulting from the (501) surface of the silicon-metal alloy phase that is not subjected to the mechanical alloying, by 0.6° to 0.9°.

Abstract: Disclosed herein is an apparatus for inspecting a physical quality sensor, the apparatus including: a measuring unit measuring at least one reference sensor and an inspected sensor; and a display unit electrically communicated with the measuring unit. The measuring unit includes: a base including a first seating part mounting a reference substrate having at least one reference sensor mounted thereon and a second seating part seating the inspected sensor to be adjacent to the reference sensor; and an upper cover including a through-hole exposing the reference sensor and the inspected sensor to surrounding atmosphere and formed in a plate shape covering at least one reference sensor and the inspected sensor. According to the present invention, measured data of the inspected sensor is compared to measured data of the reference sensor under the same condition, such that it is determined that the inspected sensor is a good product.

Abstract: A method and apparatus for restoring an image by copying a memory may include determining whether to perform an interpolation operation based on block information, and restoring a current image using a reference image depending on whether to perform the interpolation operation.

Abstract: In some embodiments, methods for forming a three dimensional NAND structure include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon consisting layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating layers; providing a process gas comprising sulfur hexafluoride and oxygen to the process chamber; providing RF power of about 4 kW to about 6 kW to a first inductive RF coil and a second inductive RF coil disposed proximate the process chamber to ignite the process gas to form a plasma, wherein a current flowing through the first inductive RF coil is out of phase with RF current flowing through the second inductive RF coil; and etching through a desired number of the alternating layers to form a feature.

Abstract: At least one implementation of a gear shift control system includes an output mechanism coupled to a vehicle transmission, a first drive member coupled to the output mechanism to drive the output mechanism to shift between gears of the transmission and a drivetrain. The drivetrain may include a first input driven by the drive member during a first mode of operation of the gear shift control system and an output coupled to both the first input and the output mechanism to drive the output mechanism as commanded by the drive member. During a second mode of operation of the gear shift control system a second input is coupled to the output. A second drive member is coupled to the second input to drive the output mechanism through the second input and the output during the second mode of operation to cause a transmission gear shift.

Abstract: Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate, providing an etching gas mixture including a halogen containing gas and a Cl2 gas into the processing chamber, supplying a RF source power to form a plasma from the etching gas mixture, supplying a pulsed RF bias power in the etching gas mixture, and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma.

Abstract: In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and oxygen (O2) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.

Abstract: A cooling device according to an exemplary embodiment of the present invention includes: a chamber including at least one flexible surface; a piezoelectric element formed in the at least one flexible surface and generating a volume change in the chamber by bending the at least one flexible surface in a first direction or a second direction to generates a first directional air flow or a second directional air flow; an opening formed in the chamber and becoming a channel of the first direction air flow or the second directional air flow; and at least one connection unit connected to the outer side of the chamber and the outer side of a heat source that is provided at a distance from the chamber and connecting the chamber and the heat source.

Abstract: In some embodiments, methods for forming a three dimensional NAND structure include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon consisting layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating layers; providing a process gas comprising sulfur hexafluoride and oxygen to the process chamber; providing RF power of about 4 kW to about 6 kW to a first inductive RF coil and a second inductive RF coil disposed proximate the process chamber to ignite the process gas to form a plasma, wherein a current flowing through the first inductive RF coil is out of phase with RF current flowing through the second inductive RF coil; and etching through a desired number of the alternating layers to form a feature.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: The present invention relates to a data processing system and to a method for implementing simulation in the system, and the invention comprises: a process of inputting an application code for implementing a simulation; a process of converting the input application code into assembly data format; a process of generating basic blocks for the assembly data format; and a process of implementing the simulation via the generated basic blocks. Consequently the simulation implementation time is shortened as the simulation is implemented from instruction units to basic block units.

Abstract: An LCD device includes dual gate transistors provided to an output portion of the shift register for outputting a gate voltage. As such, the charge/discharge time of the output portion is reduced so the response time of liquid crystal is improved.

Abstract: A method and a portable device for supporting an adaptive data communication control are provided. The device includes a memory unit, a control unit, and a radio frequency unit. The memory unit stores a table that contains data communication setting information corresponding to each service operator network. The control unit performs a Public Land Mobile Network (PLMN) selection after entering into a service area of specific service operator network, and receives Mobile Country Code/Mobile Network Code (MCC/MNC) information from the specific service operator network while the PLMN selection is being performed. The control unit extracts the data communication setting information corresponding to the MCC/MNC information from the table, and establishes a data communication connection with the specific service operator network according to the extracted data communication setting information.

Abstract: An apparatus and method for providing one or more protocols for one or more electronic devices are provided. The method includes establishing, by an electronic device configured to provide a framework interface by executing instructions stored in a memory, one or more physical channels with an external electronic device, using one or more communication modules, executing, by the electronic device, two or more application programs to interface with the framework interface, and communicating, via the framework interface, data from the two or more application programs through the one or more physical channels to the external electronic device, using at least one logical channel or session for a respective one of the two or more application programs.

Abstract: An apparatus and method for providing one or more protocols for one or more electronic devices are provided. The method includes establishing, by an electronic device configured to provide a framework interface by executing instructions stored in a memory, one or more physical channels with an external electronic device, using one or more communication modules, executing, by the electronic device, two or more application programs to interface with the framework interface, and communicating, via the framework interface, data from the two or more application programs through the one or more physical channels to the external electronic device, using at least one logical channel or session for a respective one of the two or more application programs.

Abstract: A gearshift assembly structure includes: a gearshift knob including a knob core that has a insertion hollow formed lengthwise; a locking member installed on the knob core to pivot, the locking member having a locking protrusion formed on the outer surface of the locking member; and a gearshift rod to be inserted into the insertion hollow of the knob core, the gearshift rod having a locking groove formed on the outer surface thereof, wherein at the position the gearshift rod is fully inserted into the insertion hollow of the knob core, the locking member is received in the locking groove by pivoting the locking member inward.

Abstract: An anode active material for a secondary battery includes an amount of a first element group in a range of about 0 at % (atomic percent) to about 30 at %, an amount of a second element group in a range of about 0 at % to about 20 at %, a balance of silicon and other unavoidable impurities. The first element group may include copper (Cu), iron (Fe), or a mixture thereof, and the second element group may include titanium (Ti), nickel (Ni), manganese (Mn), aluminum (Al), chromium (Cr), cobalt (Co), zinc (Zn), boron (B), beryllium (Be), molybdenum (Mo), tantalum (Ta), sodium (Na), strontium (Sr), phosphorous (P) or mixtures thereof.