Patents by Inventor Soon Kang Huang
Soon Kang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140162534Abstract: A polishing system for polishing a semiconductor wafer includes a wafer support for holding the semiconductor wafer, and a first polishing pad for polishing a region of the semiconductor wafer. The semiconductor wafer has a first diameter, and the first polishing pad has a second diameter shorter than the first diameter.Type: ApplicationFiled: December 6, 2012Publication date: June 12, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chi LIN, Kun-Tai WU, You-Hua CHOU, Chih-Tsung LEE, Min Hao HONG, Chih-Jen WU, Chen-Ming HUANG, Soon-Kang HUANG, Chin-Hsiang CHANG, Chih-Yuan YANG
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Publication number: 20130217306Abstract: Some embodiments relate to a chemical mechanical polishing (CMP) system. The CMP system includes a polishing pad having a polishing surface, and a wafer carrier to retain a wafer proximate to the polishing surface during polishing. A motor assembly rotates the polishing pad and concurrently rotates the wafer during polishing of the wafer. A conditioning disk has a conditioning surface that is in frictional engagement with the polishing surface during polishing. A torque measurement element measures a torque exerted by the motor assembly during polishing. A condition surface analyzer determines a surface condition of the conditioning surface or the polishing surface based on the measured torque. Other systems and methods are also disclosed.Type: ApplicationFiled: February 16, 2012Publication date: August 22, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jiann Lih Wu, Bo-I Lee, Soon Kang Huang, Chi-Ming Yang, Chin-Hsiang Lin
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Publication number: 20130210173Abstract: To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.Type: ApplicationFiled: February 14, 2012Publication date: August 15, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jiann Lih Wu, Bo-I Lee, Soon Kang Huang, Chih-I Peng, Chi-Ming Yang, Chin-Hsiang Lin
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Publication number: 20130210323Abstract: The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.Type: ApplicationFiled: February 15, 2012Publication date: August 15, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jiann Lih Wu, Bo-I Lee, Soon Kang Huang, Chi-Ming Yang, Chin-Hsiang Lin
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Patent number: 8188447Abstract: A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.Type: GrantFiled: January 26, 2009Date of Patent: May 29, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-Ru Yang, Chyi Shyuan Chern, Soon Kang Huang
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Patent number: 7957118Abstract: A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.Type: GrantFiled: April 30, 2009Date of Patent: June 7, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Pin Chang, Tung Long Lai, Soon Kang Huang
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Patent number: 7950983Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.Type: GrantFiled: January 6, 2010Date of Patent: May 31, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Soon Kang Huang, Chih-Lung Lin, Chyi-Shyuan Chern
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Publication number: 20100291840Abstract: A chemical mechanical polishing (CMP) apparatus provides for polishing semiconductor wafers and for conditioning the polishing pad of the CMP apparatus using multiple conditioning disks at the same time. The conditioning disks may be moved together or independently along the surface of polishing pad to condition the entire surface of the rotating polishing pad.Type: ApplicationFiled: May 12, 2009Publication date: November 18, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Soon Kang HUANG, Kun-Ku HUNG, Zin-Chang WEI, Chyi Shyuan CHERN
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Publication number: 20100277850Abstract: A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.Type: ApplicationFiled: April 30, 2009Publication date: November 4, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Pin Chang, Tung Long Lai, Soon Kang Huang
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Publication number: 20100187444Abstract: A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.Type: ApplicationFiled: January 26, 2009Publication date: July 29, 2010Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-Ru Yang, Chyi Shyuan Chern, Soon Kang Huang
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Publication number: 20100112912Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.Type: ApplicationFiled: January 6, 2010Publication date: May 6, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Soon Kang Huang, Chih-Lung Lin, Chyi-Shyuan Chern
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Patent number: 7666068Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.Type: GrantFiled: May 21, 2007Date of Patent: February 23, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Soon Kang Huang, Chih-Lung Lin, Chyi-Shyuan Chern
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Publication number: 20080293339Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.Type: ApplicationFiled: May 21, 2007Publication date: November 27, 2008Inventors: Soon Kang Huang, Chih-Lung Lin, Chyi-Shyuan Chern
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Patent number: 7141495Abstract: Methods of forming a contact structure, contact structures and apparatuses applied thereto are disclosed. The method of forming a contact structure forms a dielectric layer on a substrate. A metal contact with metal oxide thereon is formed in the dielectric layer. The solubility of the metal oxide is enhanced by using H2O with a temperature higher than about 10° C. or a chemical with a temperature higher than about 15° C.Type: GrantFiled: August 25, 2004Date of Patent: November 28, 2006Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.Inventors: Shuang-Neng Peng, Chun-Hung Chen, Soon Kang Huang, Weng-Liang Fang
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Patent number: 6821895Abstract: A dynamically adjustable slurry feed arm and method for adjusting the same in a CMP process including carrying out the CMP process for a predetermined period of time on a substrate comprising a polishing layer to remove a portion of a polishing layer; determining the thickness of the polishing layer at a plurality of predetermined measurement areas comprising at least a polishing layer peripheral portion and a polishing layer center portion; determining a desired subsequent dispensing position to equalize the thickness of the polishing layer; and, adjusting the slurry feed arm to the subsequent dispensing position such that the slurry is dispensed over the polishing pad at the subsequent dispensing position comprising one of closer to the polishing pad center portion and closer to the polishing pad peripheral portion.Type: GrantFiled: February 20, 2003Date of Patent: November 23, 2004Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Bih-Tiao Lin, Soon-Kang Huang
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Publication number: 20040166686Abstract: A dynamically adjustable slurry feed arm and method for adjusting the same in a CMP process including carrying out the CMP process for a predetermined period of time on a substrate comprising a polishing layer to remove a portion of a polishing layer; determining the thickness of the polishing layer at a plurality of predetermined measurement areas comprising at least a polishing layer peripheral portion and a polishing layer center portion; determining a desired subsequent dispensing position to equalize the thickness of the polishing layer; and, adjusting the slurry feed arm to the subsequent dispensing position such that the slurry is dispensed over the polishing pad at the subsequent dispensing position comprising one of closer to the polishing pad center portion and closer to the polishing pad peripheral portion.Type: ApplicationFiled: February 20, 2003Publication date: August 26, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bih-Tiao Lin, Soon-Kang Huang