Abstract: A method of forming a crystalline thin film from an amorphous semiconductor thin film such as amorphous silicon, by providing a generally planar nucleation inducing member, such as a crystalline silicon wafer, having a number of micro-scale surface contact points and with a hardness equal to or greater than the hardness of the amorphous semiconductor thin film, contacting under pressure the surface contact points of the nucleation inducing member with the exposed surface of the amorphous thin film to form an assembly, annealing the assembly at between 300 to 700 degrees C. for 1 to 24 hours to crystallize the amorphous thin film, and removing the nucleation inducing member.