Abstract: A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

Abstract: Certain implementations of the disclosed technology include systems and methods for providing header assemblies for use with pressure sensors in high-temperature environments. Certain example implementations include a header assembly. The header assembly can include a header portion having a first side and a second side, the header portion including one or more bores extending through the header portion from the first side to the second side. In certain example implementations, one or more platinum header pins are disposed within and extending through the one or more bores of the header portion. In certain example implementations, the header assembly can include one or more brazing portions corresponding to the one or more platinum header pins. In certain example implementations, the platinum header pins are configured for electrical communication with corresponding electrodes of a leadless transducer element.

Abstract: Aspects of the present disclosure relate to a pressure sensor header for use with a pressure-sensing device. The pressure sensor header can be used in high-temperature environments. A pressure sensor header of the present disclosure can include a header shell, a sealing header glass that is sealed to the header shell, one or more electrical connections electrically isolated from the header shell by the sealing header glass, and a plate for sealing to a pressure-sensing device to be incorporated onto the pressure sensor header. The plate may include one or more ribs that allow for sealing of the plate to the header shell. The pressure sensor header may include a ribbed insert for sealing to the header shell and plate.

Abstract: This disclosure provides example methods, devices, and systems for a sensor co-located with an electronic circuit. In one embodiment, a sensor assembly may comprise a semiconductor device configured to include a sensor having a sensing element, an electronic circuit and wherein the sensing element and the electronic circuit are hermetically sealed in the same sensor assembly; and wherein the sensor assembly is capable of outputting an environmental condition signal associated with an environmental condition measured by the sensor.

Abstract: This disclosure provides example methods, devices, and systems for a sensor co-located with an electronic circuit. In one embodiment, a sensor assembly may comprise a semiconductor device configured to include a sensor having a sensing element, an electronic circuit and wherein the sensing element and the electronic circuit are hermetically sealed in the same sensor assembly; and wherein the sensor assembly is capable of outputting an environmental condition signal associated with an environmental condition measured by the sensor.

Abstract: A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

Abstract: A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.

Abstract: A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.