Abstract: The present invention relates to a tunable microwave/millimeter-wave arrangement comprising a tunable impedance surface. It comprises an Electromagnetic Bandgap Structure (EBG) (Photonic Bandgap Structure) comprising at least one tunable ferroelectric layer (3), at least one first, top, metal layer (1) and at least one second metal layer (2A, 2B). Said first (1) and second metal layers (2A) are disposed on opposite sides of the/a ferroelectric layer (3), and at least the first, top, metal layer (1) is patterned and the dielectric permittivity of the at least one ferroelectric layer (3) is dependent on a DC biasing voltage directly or indirectly applied to first (1) and/or second (2A, 2B) metal layers disposed on different sides of the/a ferroelectric layer.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The varactor shunt switches can be used to create a bandpass filter and a tunable notch filter. The bandpass filter is implemented by cascading the switches, and the bandpass filter implemented through the use of a resonance circuit.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input.

Abstract: A tunable electromagnetic delay line, comprising a first conductor with a first main direction of extension. The first conductor is arranged on top of a non-conducting substrate. The delay line additionally comprises a layer of a ferroelectric material with first and second main surfaces. The layer separates the first conductor and the substrate. The delay line also comprises a second conductor with a second main direction of extension, with the first and second main directions of extensions essentially coinciding with each other, and with the first and second conductors being each other's mirror image with respect to an imagined line in the center of the delay line along the first and second main directions of extension. The tuning is accomplished by applying a voltage between said first and second conductors.

Abstract: A lens (300, 500) is disclosed for steering the exit direction (?) of an incident electromagnetic wave. The lens comprises a main body (210, 510) of a ferroelectric material with a first main surface (207, 507) and a first transformer (220, 222). The electromagnetic wave enters and exits the lens through the transformer, and the lens comprises means (370, 380) for creating a DC-field in a first direction in the main body. The main body (210, 510) of ferroelectric material comprises a plurality (21011-210NN, 51011-510NN) of slabs of the ferroelectric material, each slab also comprising a first (403, 603) and a second electrode of a conducting material. The means for creating a DC-field can create a gradient DC-field in the first direction using the first and second electrodes, so that the dielectric constant in the main body will also be a gradient in the first direction, thus enabling steering of the existing electromagnetic wave.

Abstract: The present invention relates to a tunable microwave arrangement (10) comprising a microwave/integrated circuit device (11) and a substrate (6). It comprises a layered structure disposed between said microwave/integrated circuit device and said substrate (5), said layered structure acting as a ground plane and it comprises at least one regularly or irregularly patterned first metal layer (1), at least one second metal layer (3), at least one tunable ferroelectric film layer (2), whereby said layers are so arranged that the ferroelectric film layers) (2) is/are provided between the/a first metal layer (1) and the/a second metal layer (3).

Abstract: The invention discloses a varactor device (100) for improved temperature stability, comprising a first varactor (160) connected to a decoupling network (150). The device further comprises a voltage stabilizer (110), said stabilizer comprising a capacitor (140) and a temperature dependent capacitor (130), and in that the stabilizer comprises means for connection to a DC-feed (120). Suitably, the decoupling network (150) is connected in parallel to the first varactor (160), and the capacitor (140) of the voltage stabilizer (110) is connected in parallel to the decoupling network (150), the temperature dependent capacitor (130) of the voltage stabilizer (110) being connected in series to the diode of the voltage stabilizer (110).

Abstract: The invention discloses a delay-locked loop circuit with input means for a signal that is to be delayed, the input means comprising means for splitting the input signal into a first and a second branch. The signal in the first branch is connected to a component for delaying the signal, and the signal in the second branch is used as a non-delayed reference for the delay caused by the delay component in the first branch. The delay component is a passive tunable delay line, and the circuit comprises tuning means for the tunable delay line, the tuning means being affected by said reference signal, and the first branch comprises output means for outputting a delayed signal with a chosen phase delay. Suitably, the delay component is continuously tunable, for example a tunable ferroelectric delay line.

Abstract: The invention discloses an oscillator circuit (100, 200, 300, 400), comprising an oscillating element (110, 210, 310, 410) and output means (115, 215, 315, 415) for outputting an oscillation frequency from the oscillating circuit. The circuit further comprises a signal delay means (120, 220, 320, 420) which is arranged in series with the oscillating element and feeds the output signal back to the oscillating element. The delay means is (120, 220, 320, 420) tuneable with respect to the delay it provides. The oscillating element can be an amplifier or a VCO, and the delay means can be a Delay Locked Loop or a tuneable delay line, depending on the embodiment of the invention.

Abstract: The invention discloses a tuneable resonator (100, 200, 300, 500, 600, 700, 900) with a substrate layer (140, 260, 360, 560, 660, 960), which substrate layer supports a structure with a first electrode (130, 240, 350, 550, 650). In connection to the first electrode there is arranged a layer (120, 230, 330, 530, 630, 930) of a material which can be brought to resonate. The resonator further comprises a second electrode (110, 210, 310, 510, 610, 710, 910) arranged in connection to said material which can be brought to resonate, and the material which can be brought to resonate is a ferroelectric material. The ferroelectric material is brought into resonance by applying an electrical field (DC, AC) between the first and the second electrode, the tuning being achieved by varying the electrical field.

Abstract: The present invention relates to a tunable microwave arrangement (10) comprising a microwave/integrated circuit device (11) and a substrate (6). It comprises a layered structure disposed between said microwave/integrated circuit device and said substrate (5), said layered structure acting as a ground plane and it comprises at least one regularly or irregularly patterned first metal layer (1), at least one second metal layer (3), at least one tunable ferroelectric film layer (2), whereby said layers are so arranged that the ferroelectric film layers) (2) is/are provided between the/a first metal layer (1) and the/a second metal layer (3).

Abstract: The present invention relates to a tunable microwave/millimeter-wave arrangement comprising a tunable impedance surface. It comprises an Electromagnetic Bandgap Structure (EBG) (Photonic Bandgap Structure) comprising at least one tunable ferroelectric layer (3), at least one first, top, metal layer (1) and at least one second metal layer (2A, 2B). Said first (1) and second metal layers (2A) are disposed on opposite sides of the/a ferroelectric layer (3), and at least the first, top, metal layer (1) is patterned and the dielectric permittivity of the at least one ferroelectric layer (3) is dependent on a DC biasing voltage directly or indirectly applied to first (1) and/or second (2A, 2B) metal layers disposed on different sides of the/a ferroelectric layer.

Abstract: The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permitivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled.

Abstract: A method of creating a capacitor in an integrated circuit. According to a basic version of the invention the capacitor uses intensive fringing fields to create a capacitance. This is achieved by creating a capacitor with vertical overlapping conducting electrodes between two planes of the integrated circuit, instead of plates parallel to the planes. A capacitor according to the invention can additionally comprise horizontal, i.e. parallel plates. A capacitor according the method is also disclosed.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input.

Abstract: The invention discloses a delay-locked loop circuit with input means for a signal that is to be delayed, the input means comprising means for splitting the input signal into a first and a second branch. The signal in the first branch is connected to a component for delaying the signal, and the signal in the second branch is used as a non-delayed reference for the delay caused by the delay component in the first branch. The delay component is a passive tunable delay line, and the circuit comprises tuning means for the tunable delay line, the tuning means being affected by said reference signal, and the first branch comprises output means for outputting a delayed signal with a chosen phase delay. Suitably, the delay component is continuously tunable, for example a tunable ferroelectric delay line.

Abstract: The invention discloses an oscillator circuit (100, 200, 300, 400), comprising an oscillating element (110, 210, 310, 410) and output means (115, 215, 315, 415) for outputting an oscillation frequency from the oscillating circuit. The circuit further comprises a signal delay means (120, 220, 320, 420) which is arranged in series with the oscillating element and feeds the output signal back to the oscillating element. The delay means is (120, 220, 320, 420) tuneable with respect to the delay it provides. The oscillating element can be an amplifier or a VCO, and the delay means can be a Delay Locked Loop or a tuneable delay line, depending on the embodiment of the invention.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. In one embodiment, the varactor shunt switch can be used as passive sensor with the capability of being wireless.

Abstract: The present invention relates to a method for fabricating a cavity in substrate for a component for electromagnetic waves, the method comprising providing said cavity by removal of material from said substrate by removal of material by immersing the substrate in a liquid bath of a chemical etchant, so that resultant cavity has a top and a bottom side and sidewalls, and said cavity at one of said top and/or bottom sides exhibits an at least a four sided opening having an opening with at least two different adjacent angles. The invention also relates to the component for microwave applications.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The varactor shunt switches can be used to create a bandpass filter and a tunable notch filter. The bandpass filter is implemented by cascading the switches, and the bandpass filter implemented through the use of a resonance circuit.