Abstract: The present invention refers to a variable capacitor comprising a first conductive layer, a second conductive layer and a semiconductor layer, the first and second layers being arranged to be displaced relative to each other under the influence of an electrostatically generated force. The semiconductor layer constitutes a voltage generator, which when exposed to a radiation produces a voltage for charging the first and second conductive layers and induces the electrostatically generated force.

Abstract: More even current distribution in a transmission line is provided by an arrangement including a first conductive layer, a dielectric layer and a ground plane. The first conductive layer, the dielectric layer and the ground plane extend mainly in substantially the same direction, with the dielectric layer arranged between the first conductive layer and the ground plane. The arrangement includes an object located between the dielectric layer and the ground plane. The object can be electrically conductive or made of a dielectric material.

Abstract: The present invention relates to a thin film ferroelectric varactor device (10) comprising a substrate layer (1), a ferroelectric layer structure (12) and an electrode structure (91,92). The ferroelectric layer structure (12) comprises a number of ferroelectric layers (2,4) and a number of intermediate buffer layers (3) arranged in an alternating manner. At least a first (2) and a second (4) layer of said ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer (12) has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer (4) has a maximum.

Abstract: A balanced inductor formed on lossy substrate material having adjacent strips leading current in opposite directions and being arranged in such a way that substrate currents relating to individual strips (1) induced in the lossy substrate (3) are balancing out one another leading to high Q-values. The inductor structure according to the invention can be implemented in MMIC devices using standard semiconductor substrates and do not require any special treatment of the substrate being needed.

Abstract: Microwaves are generated by heterodyning the outputs of two or more optical lasers which have differing central frequencies to produce beat frequencies in the microwave range. One of the beat frequencies is used to modulate the output of at least one of the lasers so as to produce sidebands which differ from the central frequency by an integral number of the sideband frequency. Each laser is connected to one of the other lasers by a weak optical link to optically injection lock the laser to the sideband of the other laser.

Abstract: An arrangement for coupling electro magnetic waves, particularly microwaves, into and/or out of a device which includes a dielectric resonator having a non-linear dielectric substrate with a high dielectric constant and a coupling loop. The dimensions of the resonator and the coupling loop are related to the resonant frequency of the resonator. The coupling loop is so arranged in relation to the resonator that the magnetic field lines around the coupling loop match the internal film distribution of at least one mode, which has been selected to be excited, so that only that mode is excited. Coupling is provided only for this mode. The length of the coupling loop is comparable to or larger that the dimensions of the resonator.

Abstract: Superconducting multiplexing/demultiplexing arrangements include a number of signal input devices and a number of signal output devices. A number of resonators provides a number of filters. Each filter represents a channel. The resonator(s) operate(s) devices at lest in dual mode, and tuning devices are provided so that at least some of the resonators is/are tuneable. A method is provided of multiplexing signals incoming to a multiplexing arrangement with a number of resonators, each of the resonators having a number of input ports which are so arranged that a number of mulitpole filters are created. Input signals having different frequencies are supplied to the different input ports of the resonators, each of which is operated in three modes. Coupling devices are arranged which at least comprise the angle between the input ports and a symmetry plane. The angles are non-perpendicularly azimuth.

Abstract: A superconducting notch or band reject filter arrangement includes a superconducting dielectric resonator and a waveguide arrangement including a microstrip line to which the resonator is connected. The resonator is a parallel-plate resonator with a chip of a non-linear dielectric material device on which superconductors are arranged and the waveguide arrangement includes a contact device or a coupling device, the resonator being connected to the contact device of the waveguide arrangement in such a way that electric contact is provided, and the filter arrangement is frequency tuneable. Through the arrangement, the insertion losses are low.