Abstract: A membrane electrode assembly (MEA) includes an ionically-conductive proton exchange membrane. Further, the MEA includes an anode contacting a first side of the membrane. The anode includes an anode gas diffusion layer (GDL). Further, the anode includes a first anode catalyst layer containing first catalyst particles, a hydrophobic polymer bonding agent, and a first ionomer bonding agent that lacks functional chains on a molecular backbone. The anode also includes a second anode catalyst layer containing second catalyst particles and a second ionomer bonding agent that includes functional chains on a molecular backbone. The MEA also includes a cathode contacting a second side of the membrane and comprising third catalyst particles and a cathode GDL.

Abstract: A membrane electrode assembly (MEA) includes an ionically-conductive proton exchange membrane. Further, the MEA includes an anode contacting a first side of the membrane. The anode includes an anode gas diffusion layer (GDL). Further, the anode includes a first anode catalyst layer containing first catalyst particles, a hydrophobic polymer bonding agent, and a first ionomer bonding agent that lacks functional chains on a molecular backbone. The anode also includes a second anode catalyst layer containing second catalyst particles and a second ionomer bonding agent that includes functional chains on a molecular backbone. The MEA also includes a cathode contacting a second side of the membrane and comprising third catalyst particles and a cathode GDL.

Abstract: A fuel cell system includes a fuel cell stack, a fuel inlet conduit configured to provide a fuel to a fuel inlet of the fuel cell stack, an electrochemical pump separator containing an electrolyte, a cathode, and a carbon monoxide tolerant anode, a fuel exhaust conduit that operatively connects a fuel exhaust outlet of the fuel cell stack to an anode inlet of the electrochemical pump separator, and a product conduit which operatively connects a cathode outlet of the electrochemical pump separator to the fuel inlet conduit.

Abstract: A fuel cell system and method, the system including a hotbox, a fuel cell stack disposed in the hotbox, an anode tail gas oxidizer (ATO) disposed in the hotbox, and a fuel exhaust processor fluidly connected to the hotbox. The fuel exhaust processor includes a first hydrogen pump configured to extract hydrogen from the anode exhaust received from the fuel cell stack and to output the hydrogen to a first hydrogen stream provided to the fuel cell stack, a second hydrogen pump configured to extract hydrogen from anode exhaust output from the first hydrogen pump and to output the hydrogen to the first hydrogen stream, and a third hydrogen pump configured to extract hydrogen from anode exhaust output from the second hydrogen pump and to output the hydrogen to a second hydrogen stream provided to the ATO.

Abstract: A fuel cell system anode tail gas oxidizer (ATO) includes an inner ATO wall, an outer ATO wall, and a first catalyst ring disposed in a chamber formed between the inner ATO wall and the outer ATO wall. The first catalyst ring includes an inner wall, an outer wall, and a matrix disposed between the inner wall and the outer wall and loaded with an oxidation catalyst.

Abstract: A fuel cell system includes a fuel cell stack, a fuel inlet conduit configured to provide a fuel to a fuel inlet of the fuel cell stack, an electrochemical pump separator containing an electrolyte, a cathode, and a carbon monoxide tolerant anode, a fuel exhaust conduit that operatively connects a fuel exhaust outlet of the fuel cell stack to an anode inlet of the electrochemical pump separator, and a product conduit which operatively connects a cathode outlet of the electrochemical pump separator to the fuel inlet conduit.

Abstract: A method for operating a fuel cell system is provided. The method includes controlling a provision of fuel to the fuel cell system operating in a steady-state mode. The catalyst sensor is operated by providing a portion of the fuel and anode exhaust generated by the system to the catalyst sensor. Further, a change in an outlet temperature of the catalyst sensor is detected. Thereafter, it is determined whether a reformation catalyst of the catalyst sensor is poisoned by contaminants in the fuel based on the detected change in the outlet temperature.

Abstract: A fuel cell system includes a fuel cell stack configured to generate electricity, an anode exhaust and a cathode exhaust, an anode tail gas oxidizer (ATO) configured to oxidize the anode exhaust using the cathode exhaust, and a low-temperature oxidizer (LTO) configured to catalyze oxidation of carbon monoxide (CO) in the cathode exhaust output from the ATO.

Abstract: A membrane electrode assembly (MEA) includes an ionically-conductive proton exchange membrane, an anode contacting a first side of the membrane and a cathode contacting a second side of the membrane and including third catalyst particles and a cathode GDL. The anode includes an anode gas diffusion layer (GDL), a first anode catalyst layer containing first catalyst particles, a hydrophobic polymer bonding agent, and a first ionomer bonding agent that lacks functional chains on a molecular backbone, and a second anode catalyst layer containing second catalyst particles and a second ionomer bonding agent that includes functional chains on a molecular backbone.

Abstract: A carbon monoxide (CO) tolerant membrane electrode assembly (MEA) includes an ionically-conductive proton exchange membrane, an anode contacting a first side of the membrane and including a hydrophobic bonding agent, an ionomer bonding agent, first catalyst particles, second catalyst particles, and an anode gas diffusion layer (GDL), a cathode contacting a second side of the membrane and including a cathode GDL. The first catalyst particles are configured to preferentially catalyze oxidation of CO, and the second catalyst particles are configured to preferentially catalyze generation of hydrogen ions.

Abstract: A method of writing data to a DNA strand comprises cutting an address block of a selected address-data block unit of the DNA strand to form first and second DNA strings, and inserting a replacement address-data block that includes a replacement data segment between the first DNA string and the second DNA string to provide a rewritten DNA strand having valid address followed by valid data and an invalid address followed by invalid data.

Abstract: Three-dimensional memory devices include structures that induce a vertical tensile stress in vertical semiconductor channels to enhance charge carrier mobility. Vertical tensile stress may be induced by a laterally compressive stress applied by stressor pillar structure. The stressor pillar structures can include a stressor material such as a dielectric metal oxide material, silicon nitride, thermal silicon oxide or a semiconductor material having a greater lattice constant than that of the channel. Vertical tensile stress may be induced by a compressive stress applied by electrically conductive layers that laterally surround the vertical semiconductor channel, or by a stress memorization technique that captures a compressive stress from sacrificial material layers. Vertical tensile stress can be generated by a source-level pinning layer that prevents vertical expansion of the vertical semiconductor channel.

Abstract: Three-dimensional memory devices include structures that induce a vertical tensile stress in vertical semiconductor channels to enhance charge carrier mobility. Vertical tensile stress may be induced by a laterally compressive stress applied by stressor pillar structure. The stressor pillar structures can include a stressor material such as a dielectric metal oxide material, silicon nitride, thermal silicon oxide or a semiconductor material having a greater lattice constant than that of the channel. Vertical tensile stress may be induced by a compressive stress applied by electrically conductive layers that laterally surround the vertical semiconductor channel, or by a stress memorization technique that captures a compressive stress from sacrificial material layers. Vertical tensile stress can be generated by a source-level pinning layer that prevents vertical expansion of the vertical semiconductor channel.

Abstract: A fuel cell system includes a fuel cell stack, a fuel inlet conduit configured to provide a fuel to a fuel inlet of the fuel cell stack, an electrochemical pump separator containing an electrolyte, a cathode, and a carbon monoxide tolerant anode, a fuel exhaust conduit that operatively connects a fuel exhaust outlet of the fuel cell stack to an anode inlet of the electrochemical pump separator, and a product conduit which operatively connects a cathode outlet of the electrochemical pump separator to the fuel inlet conduit.

Abstract: Three-dimensional memory devices include structures that induce a vertical tensile stress in vertical semiconductor channels to enhance charge carrier mobility. Vertical tensile stress may be induced by a laterally compressive stress applied by stressor pillar structure. The stressor pillar structures can include a stressor material such as a dielectric metal oxide material, silicon nitride, thermal silicon oxide or a semiconductor material having a greater lattice constant than that of the channel. Vertical tensile stress may be induced by a compressive stress applied by electrically conductive layers that laterally surround the vertical semiconductor channel, or by a stress memorization technique that captures a compressive stress from sacrificial material layers. Vertical tensile stress can be generated by a source-level pinning layer that prevents vertical expansion of the vertical semiconductor channel.

Abstract: Three-dimensional memory devices include structures that induce a vertical tensile stress in vertical semiconductor channels to enhance charge carrier mobility. Vertical tensile stress may be induced by a laterally compressive stress applied by stressor pillar structure. The stressor pillar structures can include a stressor material such as a dielectric metal oxide material, silicon nitride, thermal silicon oxide or a semiconductor material having a greater lattice constant than that of the channel. Vertical tensile stress may be induced by a compressive stress applied by electrically conductive layers that laterally surround the vertical semiconductor channel, or by a stress memorization technique that captures a compressive stress from sacrificial material layers. Vertical tensile stress can be generated by a source-level pinning layer that prevents vertical expansion of the vertical semiconductor channel.

Abstract: A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a barrier material layer between the semiconductor material layer and the conductive oxide material layer, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, the bit line is disposed in a second direction perpendicular to the first direction. The barrier material layer has an ionic conductivity of greater than about 0.1 Siemens/cm @ 1000° C.

Abstract: A method of writing data to a DNA strand comprises cutting an address block of a selected address-data block unit of the DNA strand to form first and second DNA strings, and inserting a replacement address-data block that includes a replacement data segment between the first DNA string and the second DNA string to provide a rewritten DNA strand having valid address followed by valid data and an invalid address followed by invalid data.

Abstract: A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.

Abstract: A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.