Abstract: Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises phosphoric acid, at least one chelating agent, a corrosion inhibitor, a salt, an oxidizer, abrasive particulates, at least one pH adjusting agent to provide a pH from about 4 to about 7 and a solvent. The method further includes forming a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a first bias to the substrate, and removing at least about 50% of the conductive material layer. The method further includes separating the substrate from the first polishing composition, exposing the substrate to a second polishing composition and a second bias, and continuing to remove the conductive material layer.

Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

Abstract: Method and apparatus for determining removal rate and polishing endpoint of electropolishing process. One embodiment provides a method for determining an amount of material removed from a substrate. The method includes electropolishing one or more conductive materials on a substrate, determining a total charge removed from the substrate during the course of polishing the substrate, and correlating the total charge removed to a thickness of material removed from the substrate.

Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.

Abstract: Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.

Abstract: Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A first set of holes is formed through the upper layer for exposing the electrode to the processing surface. At least one aperture is formed through the upper layer and the electrode.

Abstract: A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

Abstract: Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.

Abstract: The present invention generally is directed to a method of electrochemically and mechanically planarizing a surface of a substrate, comprising: providing a basin containing an electrically conductive solution and an electrode disposed therein, disposing a polishing medium in the electrically conductive solution, positioning a substrate against the polishing medium so that a surface of the substrate contacts the electrically conductive solution, applying a first potential between the polishing medium and the electrode for a first time period, and applying a second potential between the polishing medium and the electrode for a second time period.

Abstract: Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique. The electrochemical mechanical polishing technique may include a polishing composition comprising an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, and a solvent.

Abstract: Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft material and, in one embodiment, the exposed surface may be planar.

Abstract: Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.

Abstract: A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.

Abstract: A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal.

Abstract: Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.