Patents by Inventor Stanford Ovshinsky

Stanford Ovshinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8148707
    Abstract: A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: April 3, 2012
    Assignee: STMicroelectronics S.r.l.
    Inventors: Stanford Ovshinsky, Tyler Lowrey, James D. Reed, Semyon D. Savransky, Jason S. Reid, Kuo-Wei Chang
  • Patent number: 7864567
    Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: January 4, 2011
    Assignee: Ovonyx, Inc.
    Inventors: George A. Gordon, Ward D. Parkinson, John M. Peters, Tyler A. Lowrey, Stanford Ovshinsky, Guy C. Wicker, Ilya V. Karpov, Charles C. Kuo
  • Publication number: 20100163822
    Abstract: A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
    Type: Application
    Filed: December 14, 2009
    Publication date: July 1, 2010
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Stanford Ovshinsky, Tyler Lowrey, James D. Reed
  • Publication number: 20080273379
    Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
    Type: Application
    Filed: July 11, 2008
    Publication date: November 6, 2008
    Inventors: George A. Gordon, Ward D. Parkinson, John M. Peters, Tyler A. Lowrey, Stanford Ovshinsky, Guy C. Wicker, Ilya V. Karpov, Charles C. Kuo
  • Patent number: 7414883
    Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
    Type: Grant
    Filed: April 20, 2006
    Date of Patent: August 19, 2008
    Assignee: Intel Corporation
    Inventors: George A. Gordon, Ward D. Parkinson, John M. Peters, Tyler A. Lowrey, Stanford Ovshinsky, Guy C. Wicker, Ilya V. Karpov, Charles C. Kuo
  • Publication number: 20070247899
    Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
    Type: Application
    Filed: April 20, 2006
    Publication date: October 25, 2007
    Inventors: George Gordon, Ward Parkinson, John Peters, Tyler Lowrey, Stanford Ovshinsky, Guy Wicker, Ilya Karpov, Charles Kuo
  • Publication number: 20070235709
    Abstract: A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
    Type: Application
    Filed: April 1, 2006
    Publication date: October 11, 2007
    Inventors: Sergey Kostylev, Stanford Ovshinsky, Wolodymyr Czubatyj, Patrick Klersy, Boil Pashmakov
  • Publication number: 20070212604
    Abstract: A bipolar battery comprising bipolar electrodes. The bipolar electrodes including corrugated bipolar substrates. The corrugated bipolar substrates may be formed as corrugated foils. The battery may be a nickel metal hydride battery.
    Type: Application
    Filed: March 11, 2006
    Publication date: September 13, 2007
    Inventors: Stanford Ovshinsky, John Smaga, Lin Higley, Ronald Himmler, Jason Luesing, Theodore Olszanski
  • Publication number: 20070151456
    Abstract: A nano-particulate reticulated foam-like structure, which includes particles having a size of 10-200 nanometers. The particles are joined together to form a reticulated foam-like structure. The reticulated foam-like structure is similar to the structure of carbon nano-foam. The nano-particulate reticulated foam-like structure may comprise a metal, such as a hydrogen storage alloy, either a gas-phase thermal or an electrochemical hydrogen storage alloy. The nano-particulate reticulated foam-like structure may comprise alternatively comprise a hydroxide such as nickel hydroxide or manganese hydroxide or an oxide, such as a silver oxide or a copper oxide. When the nano-particulate reticulated foam-like structure is a hydrogen storage alloy, the material exhibits substantial immunity to hydrogen cycling decrepitation and an increase in the reversible hydrogen storage capacity by reduction of trapped hydrogen by at least 10% as compared to the same alloy in bulk form.
    Type: Application
    Filed: January 5, 2006
    Publication date: July 5, 2007
    Inventors: Stanford Ovshinsky, Marshall Muller, Lin Higley
  • Publication number: 20070120091
    Abstract: A conductive additive for the positive nickel electrode for electrochemical cells which provides increased performance by suppressing an oxygen evolution reaction occurring parallel to the oxidation of nickel hydroxide, increasing conductivity of the electrode and/or consuming oxygen produced as a result of the oxygen evolution reaction.
    Type: Application
    Filed: January 25, 2007
    Publication date: May 31, 2007
    Inventors: Stanford Ovshinsky, Boyko Aladjov, Srinivasan Venkatesan, Bora Tekkanat, Meera Vijan, Hong Wang, Subhash Dhar
  • Publication number: 20070054158
    Abstract: A combination of photovoltaic devices and solid state batteries. The solid state battery comprising at least one negative electrode which may include a metal hydride active material, at least one positive electrode including an active material, and an anionic exchange membrane disposed between said negative electrode and said positive electrode. The anionic exchange membrane may be selected from materials allowing the flow of hydroxyl ions therethrough while simultaneously electrically separating the positive and negative electrodes. The anionic exchange membrane may be selected from a number of different materials based on different chemistries which allow the flow of hydroxyl ions therethrough. The anionic exchange membrane may be comprised of a polystyrene-divinylbenzene-polyvinylchloride polymeric material. The photovoltaic devices may be amorphous silicon solar cells. The photovoltaic devices may be triple junction, tandem amorphous silicon solar cells.
    Type: Application
    Filed: January 10, 2006
    Publication date: March 8, 2007
    Inventors: Stanford Ovshinsky, Boyko Aladjov, Meera Vijan
  • Publication number: 20070054160
    Abstract: A method and apparatus for elevating the operating voltage in a fuel cell having a hydrogen electrode with hydrogen storage capacity and/or an oxygen electrode with oxygen storage capacity. The fuel cell is able to sustain the elevated voltage through application of an electrical current to the fuel cell resulting in the charging of the hydrogen electrode and/or the oxygen electrode.
    Type: Application
    Filed: September 7, 2005
    Publication date: March 8, 2007
    Inventor: Stanford Ovshinsky
  • Publication number: 20070042260
    Abstract: A fuel cell. The anode of the fuel cell comprises a hydrogen oxidation catalyst comprising a finely divided metal alloy particulate. The metal alloy particulate has an average particle size of less than about 100 Angstroms.
    Type: Application
    Filed: October 27, 2006
    Publication date: February 22, 2007
    Inventors: Michael Fetcenko, Stanford Ovshinsky, Kwo Young
  • Publication number: 20060278163
    Abstract: A apparatus for depositing one or more thin film layers on one or more continuous web or discrete substrates. The apparatus includes a pay-out unit for dispensing one or a plurality of webs, a deposition unit that deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the webs following deposition. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and one or more vertically-oriented webs. The instant deposition apparatus includes a support system for guiding and stabilizing the transport of one or more webs or substrates through the deposition chambers. The support system includes a magnetic guidance assembly and an edge-stabilizing assembly that operate to inhibit perturbations of the motion of a web or substrate in directions other than the direction of transport through the apparatus.
    Type: Application
    Filed: March 16, 2006
    Publication date: December 14, 2006
    Inventors: Stanford Ovshinsky, Herbert Ovshinsky, Masat Izu, Joachim Doehler, Kevin Hoffman, James Key, Mark Lycette
  • Publication number: 20060280043
    Abstract: An optical data storage and retrieval system that includes a phase change storage medium and dual energy sources. The phase change material may store information by undergoing a transformation from one structural state to another structural state through application of energy. The system is equipped with two energy sources, neither of which alone provides sufficient energy to effect the transformation. The combination of both energy sources, however, provides sufficient energy to induce the transformation needed to record information. The energy from either source may be optical, thermal, electromagnetic, mechanical or magnetic energy.
    Type: Application
    Filed: June 29, 2006
    Publication date: December 14, 2006
    Inventors: Stanford Ovshinsky, David Strand, David Tsu
  • Publication number: 20060266441
    Abstract: A hydrogen storage alloy having an atomically engineered microstructure that both physically and chemically absorbs hydrogen. The atomically engineered microstructure has a predominant volume of a first microstructure which provides for chemically absorbed hydrogen and a volume of a second microstructure which provides for physically absorbed hydrogen. The volume of the second microstructure may be at least 5 volume % of atomically engineered microstructure. The atomically engineered microstructure may include porous micro-tubes in which the porosity of the micro-tubes physically absorbs hydrogen. The micro-tubes may be at least 5 volume % of the atomically engineered microstructure. The micro-tubes may provide proton conduction channels within the bulk of the hydrogen storage alloy and the proton conduction channels may be at least 5 volume % of the atomically engineered microstructure.
    Type: Application
    Filed: August 2, 2006
    Publication date: November 30, 2006
    Inventors: Michael Fetcenko, Kwo Young, Taihei Ouchi, Melanie Reinhout, Stanford Ovshinsky
  • Publication number: 20060266219
    Abstract: A metal hydride hydrogen storage unit utilizing compartmentalization to maintain a uniform metal hydride powder density thereby reducing stress on the vessel due to repeated cycling. An hydrogen storage alloy powder occupies at least 60% of the available interior volume of the hydrogen storage unit. Upon cycling of the hydrogen storage alloy powder between hydriding and dehydriding, the rate of increase in the average equivalent pressure exerted on the sidewall is less than 25 psi over at least 20 cycles, the hydriding portion of each of the cycles including the step of charging said hydrogen storage alloy powder to at least 60% of its maximum storage capacity.
    Type: Application
    Filed: July 14, 2005
    Publication date: November 30, 2006
    Inventors: Stanford Ovshinsky, Vitaliy Myasnikov, Alexander Gerasimov, Valerie Sobolev
  • Publication number: 20060252635
    Abstract: A method for making a catalyst having catalytically active material supported on a carrier matrix. The catalytically active material may be a mixed-valence, nanoclustered oxide(s), an organometallic material or a combination thereof. In one method, a metal salt solution is combined with a metal complexing agent to form a metal complex. The metal complex is then combined with a suspension that includes a carrier matrix and the system is subjected to ultrasonic agitation. A base is then added to induce a controlled crystallization of a catalytic nanocluster metal material onto the carrier matrix. The supported catalytic material is particularly useful for catalyzing oxygen reduction in a fuel cell, such as an alkaline fuel cell.
    Type: Application
    Filed: July 10, 2006
    Publication date: November 9, 2006
    Inventors: Stanford Ovshinsky, Cristian Fierro, Benjamin Reichman, William Mays, James Strebe, Michael Fetcenko, Avram Zallen, Tim Hicks
  • Publication number: 20060245333
    Abstract: A light-plasmon coupling lens including an optically transparent substrate having a light incident surface and a light-plasmon coupling surface opposite the light incident surface. The light-plasmon coupling surface including at least a set of circular concentric peaks/valleys which form a Fourier sinusoidal pattern in the radial direction of the circular concentric peaks/valleys. A conformal layer of metal is deposited on the light-plasmon coupling surface of the substrate and has aperture at the center of thereof through which plasmons are transmitted. An optical recording medium including a light-plasmon coupling lens.
    Type: Application
    Filed: June 29, 2006
    Publication date: November 2, 2006
    Inventors: Stanford Ovshinsky, David Strand, David Tsu
  • Publication number: 20060234462
    Abstract: A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to undergo a transformation from one state to another state, where the two states differ in resistance. The method includes the step of providing energy between one pair of terminals of the device, where the provided energy effects a change in the state of the active material adjacent to one or more other terminals of the device. In one embodiment, energy is applied between a first terminal and a second terminal of a three-terminal device and the state of the active material adjacent to the third terminal is altered. In one embodiment, energy is applied in the form of electrical energy and the active material is a phase change material that undergoes a transformation from one structural state to another structural state.
    Type: Application
    Filed: June 13, 2006
    Publication date: October 19, 2006
    Inventors: Stanford Ovshinsky, Boil Pashmakov