Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects.

Abstract: A fuel cell. The anode of the fuel cell comprises a hydrogen oxidation catalyst comprising a finely divided metal alloy particulate. The metal alloy particulate has an average particle size of less than about 100 Angstroms.

Abstract: A nano-particulate reticulated foam-like structure, which includes particles having a size of 10-200 nanometers. The particles are joined together to form a reticulated foam-like structure. The reticulated foam-like structure is similar to the structure of carbon nano-foam. The nano-particulate reticulated foam-like structure may comprise a metal, such as a hydrogen storage ahoy, either a gas-phase thermal or an electrochemical hydrogen storage alloy. The nano-particulate reticulated foam-like structure may alternatively comprise a hydroxide such as nickel hydroxide or manganese hydroxide or an oxide, such as a silver oxide or a copper oxide. When the nano-particulate reticulated foam-like structure is a hydrogen storage alloy, the material exhibits substantial immunity to hydrogen cycling decrepitation and an increase in the reversible hydrogen storage capacity by reduction of trapped hydrogen by at least 10% as compared to the same alloy in bulk form.

Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects.

Abstract: A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment,. a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

Abstract: A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.

Abstract: A method of making a catalyst. The method comprises the step of leaching a portion of the bulk of an alloy. The alloy may be a hydrogen storage alloy.

Abstract: A method of factoring numbers in a non-binary computation scheme and more particularly, a method of factoring numbers utilizing a digital multistate phase change material. The method includes providing energy in an amount characteristic of the number to be factored to a phase change material programmed according to a potential factor of the number. The programming strategy provides for the setting of the phase change material once for each time a multiple of a potential factor is present in the number to be factored. By counting the number of multiples and assessing the state of the phase change material upon execution of the method, a determination of whether a potential factor is indeed a factor may be made. A given volume of phase change material may be reprogrammed for different factors or separate volumes of phase change material may be employed for different factors.

Abstract: A hybrid fuel cell/battery including one or more electrochemical cell units comprising at least one cathode, at least one anode, and at least one auxiliary electrode. The auxiliary electrode works in combination with the anode to provide a current as a rechargeable battery while the anode and cathode work in combination to provide an electrical current as a fuel cell. The cathode and the auxiliary electrode may operate alone or in tandem to provide an electrical current.

Abstract: A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.

Abstract: Electrochemical and gas phase hydrogen storage alloy compositions that provide superior performance, especially at low temperature, and excellent cycle life characteristics. The alloys of this invention are AB5 type alloys that include a cycle life enhancement element and a low Co concentration. The preferred cycle life enhancement elements include Zr and Si. The cycle life enhancement elements increase the cycle life of the instant alloys by reducing the pulverization of alloy particles upon repeated cycles of charging-discharging or hydriding-dehydriding. The alloys are characterized by low hysteresis on cycling, where hysteresis is measured in terms of mass concentration difference, a parameter related to the activation energy associated with the incorporation of hydrogen into the alloy. The instant alloys are designed to have a low activation energy for hydrogen incorporation and as a result, provide low hysteresis and a more uniform concentration of absorbed hydrogen within the material.

Abstract: An optical data storage and retrieval system that includes a phase change storage medium and dual energy sources. The phase change material may store information by undergoing a transformation from one structural state to another structural state through application of energy. The system is equipped with two energy sources, neither of which alone provides sufficient energy to effect the transformation. The combination of both energy sources, however, provides sufficient energy to induce the transformation needed to record information. The energy from either source may be optical, thermal, electromagnetic, mechanical or magnetic energy.

Abstract: An onboard hydrogen storage unit with heat transfer system for a hydrogen powered vehicle. The system includes a hydrogen storage vessel containing a hydrogen storage alloy configured to receive a stream of hydrogen and provide hydrogen for use in powering a vehicle. During refueling a cooling/heating loop is used to remove the heat of hydride formation from the hydrogen storage alloy and during operation of the vehicle the heating/cooling loop is used to supply heat to the hydrogen storage alloy to aid in hydrogen desorption.

Abstract: An apparatus and a method for high rate deposition of thin film materials. The method including the steps of (1) generating a supply of activated species from an energy transferring gas, through the use of a plasma; (2) separating the charged species from the non-charged species of the activated species (optionally through the use of an electrically biased screen or mesh), (3) transporting the non-charged species to a collision region (through the use of the substantial pressure differential and transonic velocity of the energy transferring gas); (4) introducing a precursor deposition feedstock gas into the collision region and; (5) producing large quantities of desirable deposition species within said collision region via the collision of non-charged species of said energy transferring gas with molecules within the precursor deposition feedstock gas; and (6) depositing, at a high deposition rate, quality thin film material onto a substrate which is adjacent to the collision.

Abstract: A BCC phase hydrogen storage alloy capable of storing approximately 4.0 wt. % hydrogen and delivering reversibly up to 3.0 wt. % hydrogen at temperatures up to 110° C. The hydrogen storage alloys also possess excellent kinetics whereby up to 80% of the hydrogen storage capacity of the hydrogen storage alloy may be reached in 30 seconds and 80% of the total hydrogen storage capacity may be desorbed from the hydrogen storage alloy in 90 seconds. The hydrogen storage alloys also have excellent stability which provides for long cycle life.

Abstract: An onboard hydrogen storage unit for a hydrogen powered vehicle including one or more hydrogen storage vessels at least partially filled with a hydrogen storage material which stores hydrogen in metal hydride form. During operation of the hydrogen powered vehicle heat is provided to the hydrogen storage material within the one or more hydrogen storage vessels to aid in desorption of hydrogen from the hydrogen storage material. During hydrogen refueling, heat of hydride formation is removed from the hydrogen storage material within the one or more hydrogen storage vessels to aid in absorption of hydrogen into the hydrogen storage material. The heat of hydride formation is removed from the one or more hydrogen storage vessels via a heat transfer fluid circulated and/or cooled by a stream of compressed air.

Abstract: The present invention discloses a fuel cell having at least one bi-cell. The bi-cells may be stacked in series to achieve a desired power output. Each bi-cell is a unit cell comprising two hydrogen electrodes, two air/oxygen electrodes, two electrolyte distributors and a gas diffuser. The hydrogen electrodes are disposed adjacent to one another and the air/oxygen electrodes are disposed on the outside ends of the hydrogen electrodes. An electrolyte distributor is disposed between each adjacently set hydrogen electrode and air/oxygen electrode. A gas diffuser/distributor is disposed between the hydrogen electrodes. An elastomeric material is injected between the electrodes and distributors to provide mechanical stability. Further, the entire bi-cell is overmolded with an elastomeric material.

Abstract: Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to function in one or more of the following modes reversibly: (1) a gain mode in which gain is induced in the current passing between the load and reference terminals; (2) a conductivity modulation mode in which the conductivity of the chalcogenide material between the load and reference terminals is modulated; (3) a current modulation mode in which the current or current density between the load and reference terminals is modulated; and/or (4) a threshold modulation mode in which the voltage required to switch the chalcogenide material between the load and reference terminals from a resistive state to a conductive state is modulated. The devices may be used as interconnection devices or signal providing devices in circuits and networks.

Abstract: Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to function in one or more of the following modes reversibly: (1) a gain mode in which gain is induced in the current passing between the load and reference terminals; (2) a conductivity modulation mode in which the conductivity of the chalcogenide material between the load and reference terminals is modulated; (3) a current modulation mode in which the current or current density between the load and reference terminals is modulated; and/or (4) a threshold modulation mode in which the voltage required to switch the chalcogenide material between the load and reference terminals from a resistive state to a conductive state is modulated. The devices may be used as interconnection devices or signal providing devices in circuits and networks.

Abstract: Multi-functional electronic switching and current control devices comprising a material capable of supporting a space-charge. The devices include a load terminal, a reference terminal and a control terminal in contact with the space-charge material and a space-charge region is present at each of the multiple terminals, where each space-charge region includes an equilibrium distribution of spatially-separated charged species. Application of a control signal to the control terminal permits a perturbation of the equilibrium of charged species in the space-charge region of either or both of the load terminal and reference terminal. The space-charge perturbations will induce quantum interactions between the space-charge regions associated with the load and reference terminals that will contribute to modulation or inducement of gain, current control, or conductivity mechanism. The devices may be used as interconnection devices or signal providing devices in circuits and networks.