Abstract: A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.

Abstract: A light emitting device and a method of manufacturing the same are capable of enhancing brightness and color distribution characteristics on a light-exiting surface. The light emitting device can include: a substrate; a light emitting stacked body composed of a semiconductor light emitting element disposed on the substrate, a wavelength conversion layer disposed on the semiconductor light emitting element and containing phosphor particles, and a light-transmitting plate member disposed on the wavelength conversion layer; and a light-transmitting scattering member containing a scattering material and disposed on the light-transmitting plate member.

Abstract: There is provided a highly reliable semiconductor light emitting element and vehicle lighting unit as well as associated methods. The semiconductor light emitting element can include a support substrate, a semiconductor stacked body including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer. The element can further include a bonding layer configured to bond the support substrate and the semiconductor stacked body, the bonding layer having a side surface that forms an angle exceeding 90° with a surface of the bonding layer on the side of the semiconductor stacked body, and an interconnection layer configured to extend from the upper surface of the semiconductor stacked body to cover the side surface of the bonding layer.

Abstract: A strobe device 1 includes an electrically-conductive reflector 3 into which a xenon tube 2 having xenon gas enclosed therein and having a light-transmitting property is housed. The xenon tube 2 has an anode 21 and a cathode 22 at both ends, and a sintered body 23 electrically connected to the cathode 22 at the cathode-22 side inside the xenon tube 2. A cathode-22-side end 34a of a bottom surface 34 of the reflector 3 is positioned closer to the anode-22 side than the sintered body 23. The bottom surface 34 is provided with an electrically-conductive projecting portion 35 projecting from the cathode-22-side end 34a so as to be closer to the cathode-22 side than the anode-side end 23a of the sintered body 23.

Abstract: A piezoelectric actuator includes a substrate, an oxide layer formed on the substrate, a Ti0x (0<x?2) adhesive layer formed on the oxide layer, a Ti adhesive layer formed on the Ti0x adhesive layer, a Pt lower electrode layer formed on the Ti adhesive layer, and a PZT piezoelectric layer formed on the Pt lower electrode layer.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a casing having a cavity and a mounting surface, the chip mounted on the mounting surface, a transparent plate mounted on the wavelength converting layer within a top surface of the chip and a reflective layer located in the cavity so as to surround the transparent plate, the wavelength converting layer and the chip. The semiconductor light-emitting device can be configured to improve light-colored variability and light-emitting efficiency of the chip by using the reflective layer as a reflector, and therefore can emit a wavelength-converted light having a substantially uniform color tone and a high light-emitting efficiency from a smaller light-emitting surface than the top surface of the chip.

Abstract: A semiconductor light-emitting device, a method for manufacturing the same and a vehicle headlight can include the light-emitting device, which is composed of a light-emitting structure including a transparent plate, at least one semiconductor light-emitting chip and a wavelength converting layer between the transparent plate and the light-emitting chip to emit various colored lights including white light. The light-emitting device can also include a mounting board mounting the light-emitting structure and a frame thereon, a reflective material disposed between the frame and the light-emitting structure and the transparent material located on the reflective material to prevent an occurrence of oil-bleeding phenomenon. Thus, the disclosed subject matter can provide the light-emitting device having a high reliability for the vehicle headlight and the like, which can be maintained at a high quality even when they have been used for a long time under harsh conditions, and methods of manufacturing such devices.

Abstract: A GaN-containing semiconductor light emitting device includes: an n-type semiconductor layer formed of GaN-containing semiconductor, an active layer formed on the n-type semiconductor layer, formed of GaN-containing semiconductor, and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked alternately, and a p-type semiconductor layer formed on the active layer and formed of GaN-containing semiconductor, wherein: the barrier layers comprise: a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and formed of a GaN/AlGaN layer, and second barrier layers disposed nearer to the p-type semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of a InGaN sublayer and a GaN sublayer; and the well layers are each formed of an InGaN layer having a narrower band gap than that in the InGaN sublayer.

Abstract: A vehicle lighting unit serving as a vehicle headlight can form a light distribution pattern optimized according to the country or the area with a smaller number of parts when compared with the conventional vehicle headlights of this type. Further, there can be provided a light guide lens for use in such a vehicle lighting unit.

Abstract: A vehicle lighting unit is capable of improving the design freedom (such as that for forming a high-beam light distribution pattern) and to allow an observer to visually recognize the employed projection lens even when including a plurality of lens portions (including a plurality of rear-side focal points) as a single lens with high aesthetic feature.

Abstract: A vehicle lighting unit can form a structure or mechanism for positioning and installing a light emitting device in a vehicle lighting unit main body.

Abstract: A liquid crystal display includes: first and second substrates placed opposite each other; first and second electrodes each provided on one face of the first and second electrodes extending in first and second directions intersecting with each other; and a liquid crystal layer provided between the one face of the first substrate and the one face of the second substrate. A pixel is formed in a region where the first and second electrodes intersect, and a pixel edge of the pixel has a line segment which is oblique relative to the first direction. The first and second substrates are respectively subject to alignment treatment, and the liquid crystal layer is a substantial vertical alignment having a twisted structure, and an alignment direction of liquid crystal molecules at a substantial center in a layer thickness direction and the oblique line segment are not orthogonal.

Abstract: A liquid crystal display comprising: a vertically aligned liquid crystal layer located between a first and a second substrate, a first and a second polarizing layer, and an optical compensation plate having negative biaxial optical anisotropy; wherein at least either the first or the second substrate has protrusions having approximately the same first height and protruding into the liquid crystal layer, the protrusions being formed only inside of the sealing material, the liquid crystal layer in the protrusion-free position having a second height, and the area of the region in which the thickness of the liquid crystal layer is equal to the value obtained by subtracting the first height from the second height as a result of the existence of the protrusions accounting for a %, which belongs to 5% to 50%, of the area of the region where the liquid crystal layer exists on the substrate with protrusions.

Abstract: There is provided a semiconductor light-emitting element which has an electrode structural body including a connection electrode and a wiring electrode connected to the connection electrode, the wiring electrode stretching along a surface of a semiconductor layered body while being in partial contact with the surface of the semiconductor layered body exposed from an opening formed on the insulation layer. The area of a contact region between the wiring electrode and the semiconductor layered body increases, from a connection end which is connected to the connection electrode, along a direction in which the wiring electrode stretches.

Abstract: A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

Abstract: A semiconductor light emitting device includes: a semiconductor lamination including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer; a rhodium (Rh) layer formed on one surface of the semiconductor lamination; a light reflecting layer containing Ag, formed on the Rh layer and having an area smaller than the Rh layer; and a cap layer covering the light reflecting layer. Migration of Ag is suppressed.

Abstract: A vehicle light is capable of preventing gaps (areas darker than peripheral areas) from being formed in between a plurality of illumination areas that are independently controlled to be illuminated with light or not to be illuminated with light, or suppressing the generation of such gaps. The vehicle light can include a projection lens and a light source unit disposed behind the rear-side focal plane of the projection lens. The light source unit can include a plurality of tubular portions each having a reflective inner peripheral surface, and a plurality of semiconductor light emitting elements. Exit openings of the plurality of tubular portions can be arranged side by side in a substantial horizontal direction behind the rear-side focal plane of the projection lens. Adjacent ones of the plurality of exit openings of the tubular portions can be defined and partitioned by a common vertical edge.

Abstract: In an exemplary embodiment, a laser light source device includes a laser light source that emits laser light from a laser emission aperture. The laser light source device also includes a condenser lens disposed in front of the laser light source in a laser emission direction to collect the laser light. The laser light source device also includes a fluorescent member disposed in front of the condenser lens in the laser emission direction to receive the laser light collected by the condenser lens and to emit light of a different wavelength from that of the laser light. The laser light source device also includes a light guide that forms a light path of laser light from the laser light source to the condenser lens.

Abstract: A semiconductor light emitting device which has a wavelength converting part on a semiconductor film and can eliminate unevenness in emission color without a reduction in light output. The semiconductor film includes a light emitting layer. The support substrate is bonded to the semiconductor film via a light-reflecting layer and has a support surface supporting the semiconductor film and edges located further out than the side surfaces of the semiconductor film. The light-shielding part covers the side surfaces of the semiconductor film and part of the support surface around the semiconductor film in plan view. The wavelength converting part contains a fluorescent substance and is provided over the support substrate to bury the semiconductor film and the light-shielding part therein. The wavelength converting part has a curved surface shape in which its thickness increases when going from the edges toward the center of the semiconductor film.

Abstract: A semiconductor light-emitting device, and a method for manufacturing the semiconductor light-emitting device, in which light propagating through a light-emitting layer and reaching an edge surface of a semiconductor film can be extracted to the exterior in an efficient manner. The semiconductor light-emitting device comprises a semiconductor film including a light-emitting layer made from a group III nitride semiconductor. The semiconductor film has a tapered edge surface inclined diagonally with respect to a light extraction surface. The light extraction surface has a relief structure comprising a plurality of protrusions having a shape originating from the crystal structure of the semiconductor film. The average size of the protrusions in a first region in the vicinity of an edge section of the light extraction surface is smaller than the average size of the protrusions in a second region.