Patents by Inventor Stanley M. Filipiak

Stanley M. Filipiak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a nitride layer using preheated ammonia
    Patent number: 5188979
    Abstract: A process for forming a titanium nitride barrier layer in semiconductor devices using preheated ammonia reduces susceptibility to junction spiking. In one form of the invention, a substrate having an overlying layer of titanium is heated to a predetermined temperature in a reaction chamber. An ammonia gas is preheated to temperature not less than 600.degree. C. and is introduced into the reaction chamber. The preheated ammonia gas and the titanium layer react to form a quality titanium nitride (TiN) layer which is highly resistant to the junction spiking phenomenon. Nitride layers of other Group IVB or Group VB elements of the periodic table may also be formed using the present invention.
    Type: Grant
    Filed: August 26, 1991
    Date of Patent: February 23, 1993
    Assignee: Motorola Inc.
    Inventor: Stanley M. Filipiak
  • Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
    Patent number: 5126283
    Abstract: A process for fabricating an improved semiconductor device is disclosed wherein a protective layer of Al.sub.2 O.sub.3 is selectively formed to encapsulate a refractory-metal conductor. To form the Al.sub.2 O.sub.3 layer, first an Al/refractory-metal alloy is selectively formed on the surface of the refractory-metal conductor, then the Al/refractory-metal alloy is reacted with O.sub.2. The resulting Al.sub.2 O.sub.3 encapsulation layer acts as an O.sub.2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al.sub.2 O.sub.3 layer improves the mechanical compatibility of the refractory-metal conductor with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor.
    Type: Grant
    Filed: May 21, 1990
    Date of Patent: June 30, 1992
    Assignee: Motorola, Inc.
    Inventors: Faivel Pintchovski, John R. Yeargain, Stanley M. Filipiak