Abstract: A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.

Abstract: The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the LED's are provided with a rounded mesa configuration. In a specific embodiment, the p-type metal is positioned upon a rounded mesa, such as a parabolic mesa, formed out of the base structure materials.

Abstract: First and second light emitting diode (LED) arrays, which each includes a corresponding number of LED dies, are disposed on a substrate proximately and substantially parallel to one another. Each pair of substantially paralleled LED dies of the first and second arrays is covered by substantially transparent optical encapsulant. The optical encapsulant is one of covered by a reflective layer for a UV to visible spectral region and shaped for total internal light reflection. The substrate is diced along an axis extending in parallel and between the first and second LED arrays.

Abstract: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

Abstract: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, lnN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

Abstract: A flip chip light emitting diode die (10, 10?, 10?) includes a light-transmissive substrate (12, 12?, 12?) and semiconductor layers (14, 14?, 14?) that are selectively patterned to define a device mesa (30, 30?, 30?). A reflective electrode (34, 34?, 34?) is disposed on the device mesa (30, 30?, 30?). The reflective electrode (34, 34?, 34?) includes a light-transmissive insulating grid (42, 42?, 60, 80) disposed over the device mesa (30, 30?, 30?), an ohmic material (44, 44?, 44?, 62) disposed at openings of the insulating grid (42, 42?, 60, 80) and making ohmic contact with the device mesa (30, 30?, 30?), and an electrically conductive reflective film (46, 46?, 46?) disposed over the insulating grid (42, 42?, 60, 80) and the ohmic material (44, 44?, 44?, 62). The electrically conductive reflective film (46, 46?, 46?) electrically communicates with the ohmic material (44, 44?, 44?, 62).

Abstract: A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet.

Abstract: A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet.

Abstract: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

Abstract: A light module includes a light emitting diode assembly defining a front side light emitting diode array and a rear side. The rear side is in thermal communication with a thermally conductive spreader, and a thermally conductive core is in thermal communication with the conductive spreader. The thermally conductive core includes an electrical conductor in operative communication with the front side light emitting diode array, and a plurality of appendages are disposed about the thermally conductive core such that they are in thermal communication with the conductive spreader.

Abstract: A light emitting diode (LED) device (A) and processes for its manufacture are provided. The LED device (A) includes a light emitting chip or die (10) and an encapsulant (22) surrounding the same. The encapsulant (22) is substantially spherical in shape, and the die (10) is preferably located at a substantial center of the encapsulant (22). An electrically conductive path extends from the chip or die (10) to a periphery of the encapsulant (22) such that the chip/die (10) can be selectively energized to produce light by applying electricity to the electrically conductive path at the periphery of the encapsulant (22). Preferably, the encapsulant (22) is chosen to have an index of refraction as close as possible to the higher of an index of refraction of the die's semiconductor material and an index of refraction of the die's substrate (12).