Abstract: A component for a projection exposure apparatus for semiconductor lithography, comprises an optical element and an actuator, which are force-fittingly connected to each other. The actuator at least locally deforms the optical element. The actuator can be configured to minimize the loss in rigidity at the peripheries delimiting the actuator on the imaging quality. A method for designing a component of projection exposure apparatus is provided.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: A piezoelectric film on a substrate is provided comprising an aluminum nitride (AlN) layer, and a Al1-x(J)xN compound layer comprising a graded section with a lower (J) composition, x, adjacent to the AlN layer and a higher (J) composition, x, located away from the AlN layer, the said (J) being a singular element or a binary compound. A method for forming such a piezoelectric film is also provided. A surface acoustic wave resonator comprising such a piezoelectric film, a surface acoustic wave filter comprising such a piezoelectric film, a bulk acoustic wave resonator comprising such a piezoelectric film, and a bulk acoustic wave filter comprising such a piezoelectric film are also provided.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a plurality of piezoelectric layers having at least one polarization inversion. The bulk acoustic wave device can include a first piezoelectric layer and a second piezoelectric layer over the first piezoelectric layer. The second piezoelectric layer can be formed by atomic layer deposition. The second piezoelectric layer can have an opposite polarization relative to the first piezoelectric layer. Related filters, multiplexers, packaged radio frequency modules, radio frequency front ends, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to method of manufacturing a bulk acoustic wave device. The method can include providing a bulk acoustic wave device structure including a first piezoelectric layer and forming a second piezoelectric layer over the first piezoelectric layer by atomic layer deposition. The second piezoelectric layer can have an opposite polarization relative to the first piezoelectric layer.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a plurality of piezoelectric layers having at least one polarization inversion. The bulk acoustic wave device can include a plurality of stacked piezoelectric layers. The plurality of stacked piezoelectric layers can include a piezoelectric layer formed by atomic layer deposition. The bulk acoustic wave device can excite an overtone mode as a main mode. Related filters, multiplexers, packaged radio frequency modules, radio frequency front ends, wireless communication devices, and methods are disclosed.

Abstract: An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a first piezoelectric material layer disposed on the bottom electrode, an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer, a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic impedance material, and a top electrode disposed on the second piezoelectric material layer, where an overlap among the top electrode, the first piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the second piezoelectric material layer, and the bottom electrode over the air cavity defines a main membrane region.

Abstract: A reversed c-axis bulk acoustic resonator (RBAR) device includes a bottom electrode disposed over a substrate and at least a portion of a cavity formed in the substrate; a first piezoelectric layer disposed over the bottom electrode, the first piezoelectric layer having a first polarity; a middle electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the bottom electrode, the second piezoelectric layer having a second polarity that is substantially opposite to the first polarity of the first piezoelectric layer; and a top electrode disposed over the second piezoelectric layer. The RBAR device further includes at least one air-ring formed between the top electrode and the second piezoelectric layer, between the second piezoelectric layer and the middle electrode, between the middle electrode and the first piezoelectric layer, or between the first piezoelectric layer and the bottom electrode.

Abstract: A ladder filter includes a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port. At least one of the series or shunt resonators include a bulk acoustic wave (BAW) resonator structure, which includes: a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer. The BAW resonator structure has an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer.

Abstract: An acoustic resonator device including a piezoelectric layer, a first electrode disposed adjacent to a first surface of the piezoelectric layer, and a second electrode disposed adjacent to a second surface of the piezoelectric layer. At least one of the first electrode and the second electrode includes a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The acoustic resonator device further includes at least one lateral feature for increasing quality factor Q of the acoustic resonator structure. The at least one lateral feature includes at least one of an air-ring between the piezoelectric layer and the second electrode, and a frame on at least one of the first electrode and the piezoelectric layer.

Abstract: A method is provided for fabricating a bulk acoustic wave (BAW) resonator device. The method includes forming an etch stop layer over a bottom electrode and a substrate; forming a dielectric layer on the etch stop layer; forming a photomask over the dielectric layer defining an opening over the bottom electrode; etching a portion the dielectric layer through the opening of the photomask to the etch stop layer to create a corresponding opening in the dielectric layer; removing the photomask, leaving un-etched protruding portions of the dielectric layer around the opening in the dielectric layer; and removing the protruding portions of the dielectric layer, a portion of the etch stop layer located over the bottom electrode, and a minimal portion of the bottom electrode to provide a planarized surface including a top surface of the bottom electrode and an adjacent top surface of the dielectric layer deposited over the substrate.

Abstract: A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.

Abstract: A bulk acoustic wave (BAW) resonator having a vertically extended acoustic cavity is provided. The BAW resonator includes a bottom electrode disposed on a substrate over a cavity formed in the substrate; a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. The piezoelectric layer has a thickness of approximately ?/2, wherein ? is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator. At least one of the bottom electrode and the top electrode comprises a composite electrode having a thickness of approximately ?/2.

Abstract: An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a first piezoelectric material layer disposed on the bottom electrode, an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer, a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic impedance material, and a top electrode disposed on the second piezoelectric material layer, where an overlap among the top electrode, the first piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the second piezoelectric material layer, and the bottom electrode over the air cavity defines a main membrane region.

Abstract: An acoustic resonator structure comprises a piezoelectric layer having a first surface and a second surface, a first electrode disposed adjacent to the first surface, and a second electrode disposed adjacent to the second surface. The first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The second electrode may be disposed between a substrate and the piezoelectric layer, and it may comprise a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.

Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.

Abstract: A method of forming a film bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a piezoelectric layer on the first electrode, and forming a second electrode on the piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.

Abstract: A bulk acoustic wave (BAW) resonator having a vertically extended acoustic cavity is provided. The BAW resonator includes a bottom electrode disposed on a substrate over a cavity formed in the substrate; a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. The piezoelectric layer has a thickness of approximately ?/2, wherein ? is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator. At least one of the bottom electrode and the top electrode comprises a composite electrode having a thickness of approximately ?/2.

Abstract: A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.