Patents by Inventor Stefan Bader

Stefan Bader has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040192016
    Abstract: A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer (3) over a substrate (1) or over an initial layer (2), which mask layer has a plurality of windows (4) leading to the substrate (1) or to the initial layer (2), etching back the substrate (1) or the initial layer (2) in the windows (4), in such a manner that pits (41) are formed in the substrate (1) or in the initial layer (2) starting from these windows.
    Type: Application
    Filed: February 17, 2004
    Publication date: September 30, 2004
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Volker Harle, Hans-Jurgen Lugauer, Stephan Miller, Stefan Bader
  • Publication number: 20040187790
    Abstract: In order to achieve an as uniform as possible temperature over the entire surface of the substrate (2) during a temperature step and, in particular, during an epitaxy method, temperature equalization structures are incorporated in a substrate holder (1), on which the substrate (2) is located. A uniform temperature distribution on the substrate surface during the deposition of a semiconductor material reduces the emission wavelength gradient of the deposited semiconductor material. The temperature equalization structures produce specific temperature inhomogeneities in the substrate holder (1), and these smooth out the temperature profile of the substrate (2). For example, a groove (4) with a cooling effect and a support step (5) which produces a gap (8) between the substrate (2) and the substrate holder (1) are integrated in the edge area of the substrate holder (1).
    Type: Application
    Filed: December 30, 2003
    Publication date: September 30, 2004
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Stefan Bader, Matthias Peter, Alexander Walter, Volker Haerle
  • Publication number: 20040152312
    Abstract: The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is applied on a rear side (5) of the substrate wafer (1) lying opposite to the growth area (4). The thermal radiation absorption layer (2) exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AlInGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer (2) may produce a narrower emission wavelength distribution of the deposited material (3).
    Type: Application
    Filed: October 30, 2003
    Publication date: August 5, 2004
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Stefan Bader, Hans-Jurgen Lugauer, Volker Haerle, Berthold Hahn
  • Publication number: 20040119085
    Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.
    Type: Application
    Filed: September 24, 2003
    Publication date: June 24, 2004
    Applicant: Osram Opto Semiconductor GmbH
    Inventors: Stefan Bader, Michael Fehrer, Wilhelm Stein, Stephan Kaiser, Volker Harle, Berthold Hahn
  • Publication number: 20040113167
    Abstract: Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13).
    Type: Application
    Filed: September 25, 2003
    Publication date: June 17, 2004
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Stephan Kaiser
  • Publication number: 20040056254
    Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).
    Type: Application
    Filed: January 7, 2003
    Publication date: March 25, 2004
    Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
  • Publication number: 20040033638
    Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
    Type: Application
    Filed: April 17, 2003
    Publication date: February 19, 2004
    Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Volker Harle
  • Publication number: 20040026709
    Abstract: An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only.
    Type: Application
    Filed: June 10, 2003
    Publication date: February 12, 2004
    Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow
  • Publication number: 20030218181
    Abstract: A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.
    Type: Application
    Filed: May 15, 2003
    Publication date: November 27, 2003
    Inventors: Stefan Bader, Berthold Hahn, Volker Hrle, Hans-Jurgen Lugauer
  • Publication number: 20030197170
    Abstract: A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
    Type: Application
    Filed: February 28, 2003
    Publication date: October 23, 2003
    Inventors: Stefan Bader, Michael Fehrer, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer
  • Publication number: 20030160257
    Abstract: A radiation-emitting semiconductor component with a vertical emission direction, has a substrate, a first reflector layer, and a semiconductor layer sequence based on InGaN disposed on the first reflection layer. The semiconductor layer sequence contains a radiation-generating active layer. A second reflector layer is disposed on the semiconductor layer sequence and forms, together with the first reflector, a resonator disposed vertically with respect to the main direction of extent of the semiconductor layer sequence and whose axis represents the vertical emission direction of the semiconductor component. The second reflector layer is at least partly transmissive for radiation generated by the active layer and the radiation is coupled out through the second reflector layer. The substrate contains an electrically conductive material.
    Type: Application
    Filed: February 26, 2003
    Publication date: August 28, 2003
    Inventors: Stefan Bader, Hans-Jurgen Lugauer, Georg Bruderl, Volker Harle
  • Patent number: 5520169
    Abstract: The invention is directed to an anesthesia arrangement having a pump device for returning preselected gaseous components from an expiration line 2 of the anesthesia apparatus 1 into a first pressure vessel 17. The anesthesia arrangement is so improved that the rinsing losses are minimized and the anesthetic agent is available at constant concentration. The arrangement includes a second pressure vessel 19 connected downstream of the first pressure vessel 17 and a compressor 18 for pumping the gaseous components from the first pressure vessel into the second pressure vessel. The compressor 18 and a cooling unit 20 adjust the operating parameters of pressure and temperature so that at least the anesthetic agent is present in the liquid phase in the second pressure vessel.
    Type: Grant
    Filed: March 20, 1995
    Date of Patent: May 28, 1996
    Assignee: Dragerwerk Aktiengesellschaft
    Inventors: Michael Georgieff, Thomas Marx, Stefan Bader