Abstract: A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.

Abstract: For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. Counter electrode material is applied to the counter electrode support material and membrane carrier material and membrane support material are removed in the sound transducing region to the membrane material.

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

Abstract: According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. Adjusting the carrier signal includes performing adjustments to the carrier signal at the second frequency. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

Abstract: A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.

Abstract: According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. Adjusting the carrier signal includes performing adjustments to the carrier signal at the second frequency. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

Abstract: A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.

Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.

Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

Abstract: A packaged MEMS device and a method of calibrating a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device comprises a carrier, a MEMS device disposed on the substrate, a signal processing device disposed on the carrier, a validation circuit disposed on the carrier; and an encapsulation disposed on the carrier, wherein the encapsulation encapsulates the MEMS device, the signal processing device and the memory element.

Abstract: A sound transducer structure includes a membrane, a counter electrode, and a plurality of elevations. The membrane includes a first main surface, made of a membrane material, in a sound transducing region and an edge region of the membrane. The counter electrode is made of counter electrode material, and includes a second main surface arranged in parallel to the first main surface of the membrane on a side of a free volume opposite the first main surface of the membrane. The plurality of elevations extend in the sound transducing region from the second main surface of the counter electrode into the free volume.

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

Abstract: According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. Adjusting the carrier signal includes performing adjustments to the carrier signal at the second frequency. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

Abstract: According to an embodiment, a MEMS transducer includes a stator, a rotor spaced apart from the stator, and a multi-electrode structure including electrodes with different polarities. The multi-electrode structure is formed on one of the rotor and the stator and is configured to generate a repulsive electrostatic force between the stator and the rotor. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

Abstract: A sound transducer structure includes a membrane and a counter electrode. The membrane includes a first main surface in a sound transducing region made of a membrane material, and an edge region. The counter electrode includes a second main surface arranged in parallel to the first main surface of the membrane on a side of a free volume opposite the first main surface of the membrane. A plurality of elevations extend in the sound transducing region from the second main surface of the counter electrode into the free volume. The membrane and the counter electrode are arranged to provide a capacity therebetween. The membrane comprises a corrugation groove extending in the sound transducing region from the first main surface of the membrane into the free volume.

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.

Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.