Abstract: A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.

Abstract: A system for cooling a metal-ceramic substrate (1) having a component side (5) and a cooling side (6) opposite the component side (5), comprising a metallic cooling structure (20) with an integrated fluid channel (30) for guiding fluid within the cooling structure (20), and a distribution structure (40) made of plastic for supplying the fluid channel (30) with the fluid, wherein the cooling structure (20) has on its outer side (A) facing the distribution structure (40) an inlet opening (31) and an outlet opening (32) separate from the inlet opening (31), wherein the inlet opening (31) and the outlet opening (32) are connected to each other via the fluid channel (30) and the fluid channel (30) is configured such that, when the cooling structure is installed, the fluid is guided from the inlet opening (31) in the direction of the component side (5) and is redirected within the cooling structure (20).

Abstract: A method for producing a semi-finished metal product (2), in particular a semi-finished copper product, for a metal-copper substrate, in particular for a copper-ceramic substrate, including: providing a first metal layer (11), in particular a first copper layer, and a second metal layer (12), in particular a second copper layer, joining the first metal layer (11) and the second metal layer (12) to form the semi-finished metal product (2), wherein, chronologically before the first metal layer (11) is joined to the second metal layer (12) by means of different temperature treatments, a grain growth in the first metal layer (11) and/or the second metal layer (12) is initiated in such a way that in the produced semi-finished metal product (2), in particular in the produced metal-copper substrate, a first grain size in the first metal layer (11) differs from a second grain size in the second metal layer (12).

Abstract: A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2), wherein the first thickness (D1) is less than 250 ?m and the second thickness (D2) is greater than 200 ?m and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1) has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

Abstract: The invention relates to a process for producing a metal-ceramic substrate (1), comprising: —providing a ceramic element (10), a metal ply (40) and at least one metal layer (30), —forming an ensemble (18) of the ceramic element (10), the metal ply (40) and the at least one metal layer (30), —forming a gas-tight container (30) surrounding the ceramic element (10), wherein the at least one metal layer (30) is arranged between the ceramic element (10) and the metal ply (40) in the container, and—forming the metal-ceramic substrate (1) by hot isostatic pressing.

Abstract: A support substrate (1), in particular a metal-ceramic substrate, as a support for electric components, comprising: —at least one metal layer (10) and—an insulating element (30), in particular a ceramic element, a glass element, a glass ceramic element, and/or a high temperature-resistant plastic element. The at least one metal layer (10) and the insulating element (30) extend along a main extension plane (HSE) and are arranged one over the other in a stacking direction (S) running perpendicularly to the main extension plane (HSE), wherein in a completed support substrate (1), a binding layer (12) is formed between the at least one metal layer (10) and the insulating element (30), and an adhesive layer (13) of the binding layer (12) has a surface resistance which is greater than 5 Ohm/sq.

Abstract: A method for making a via (3) in a carrier layer (1) made of a ceramic comprising: providing the carrier layer (1), realizing a passage recess (2) in the carrier layer (1), at least partially filling the passage recess (2) with a paste (3), and performing a bonding process, in particular an active soldering process or a DCB process, for bonding a metallization (5) to the carrier layer (1), the via (3?) being realized from the paste (3) in the passage recess (2) when the bonding process is performed.

Abstract: A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 ?m, preferably less than 25 ?m and particularly preferably less than 15 ?m.

Abstract: The present invention proposes a carrier substrate (1) for electrical components (13), the carrier substrate (1) having a component side (4) and a cooling side (5) which is opposite the component side (4) and has a cooling structure (30), the carrier substrate (1) comprising a primary layer (10) which faces the component side (4) and is produced from ceramic for electrical insulation, and a secondary layer (20) which faces the cooling side (5) for stiffening the carrier substrate (1), characterized in that a metallic intermediate layer (15) is arranged between the primary layer (10) and the secondary layer (20) for heat transfer from the component side (4) to the cooling side (5), the metallic intermediate layer (15) being thicker than the primary layer (10) and/or the secondary layer (20).

Abstract: A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.

Abstract: A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

Abstract: A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

Abstract: A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

Abstract: A metal-ceramic substrate (1) comprising an insulating layer (11) extending along a main extension plane (HSE) and comprising a ceramic, and a metallisation layer (12) bonded to the insulating layer (11) over a bonding area (A), the bonding area (A) being delimited by at least one edge (K) in a plane parallel to the main extension plane (HSE), characterized in that the edge (K) is at least partially covered with a filling material (2) and an edge region (RB) of the metallisation layer (12) adjoining the edge has a material weakening.

Abstract: A system for cooling a metal-ceramic substrate (1) having a component side (5) and a cooling side (6) opposite the component side (5), comprising a metallic cooling structure (20) with an integrated fluid channel (30) for guiding fluid within the cooling structure (20), and a distribution structure (40) made of plastic for supplying the fluid channel (30) with the fluid, wherein the cooling structure (20) has on its outer side (A) facing the distribution structure (40) an inlet opening (31) and an outlet opening (32) separate from the inlet opening (31), wherein the inlet opening (31) and the outlet opening (32) are connected to each other via the fluid channel (30) and the fluid channel (30) is configured such that, when the cooling structure is installed, the fluid is guided from the inlet opening (31) in the direction of the component side (5) and is redirected within the cooling structure (20).

Abstract: A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2), wherein the first thickness (D1) is less than 250 ?m and the second thickness (D2) is greater than 200 ?m and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1) has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

Abstract: A metal-ceramic substrate (1) comprising an insulating layer (11) extending along a main extension plane (HSE) and comprising a ceramic, and a metallisation layer (12) bonded to the insulating layer (11) over a bonding area (A), the bonding area (A) being delimited by at least one edge (K) in a plane parallel to the main extension plane (HSE), characterized in that the edge (K) is at least partially covered with a filling material (2) and an edge region (RB) of the metallisation layer (12) adjoining the edge has a material weakening.

Abstract: The present invention proposes a carrier substrate (1) for electrical components (13), the carrier substrate (1) having a component side (4) and a cooling side (5) which is opposite the component side (4) and has a cooling structure (30), the carrier substrate (1) comprising a primary layer (10) which faces the component side (4) and is produced from ceramic for electrical insulation, and a secondary layer (20) which faces the cooling side (5) for stiffening the carrier substrate (1), characterized in that a metallic intermediate layer (15) is arranged between the primary layer (10) and the secondary layer (20) for heat transfer from the component side (4) to the cooling side (5), the metallic intermediate layer (15) being thicker than the primary layer (10) and/or the secondary layer (20).

Abstract: A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

Abstract: A method for producing a semi-finished metal product (2), in particular a semi-finished copper product, for a metal-copper substrate, in particular for a copper-ceramic substrate, including: providing a first metal layer (11), in particular a first copper layer, and a second metal layer (12), in particular a second copper layer, joining the first metal layer (11) and the second metal layer (12) to form the semi-finished metal product (2), wherein, chronologically before the first metal layer (11) is joined to the second metal layer (12) by means of different temperature treatments, a grain growth in the first metal layer (11) and/or the second metal layer (12) is initiated in such a way that in the produced semi-finished metal product (2), in particular in the produced metal-copper substrate, a first grain size in the first metal layer (11) differs from a second grain size in the second metal layer (12).