Abstract: A method for producing a composite material comprising a planar base material to which an additional layer is applied on one side or both sides via a solder layer, characterized by: providing the base material, wherein the base material has a first surface on at least one side; providing the additional layer and arranging the solder layer between a second surface of the additional layer and the first surface such that when the additional layer is deposited on the first surface, the first surface of the base material is covered by the solder layer in a planar manner; wherein a thickness of the solder layer between the base material and the additional layer is smaller than 12 ?m; heating the base material and the additional layer on the first surface to at least partially melt the solder layer; and connecting the base material to the at least one additional layer.

Abstract: A method for producing a composite material comprising a planar base material to which an additional layer is applied on one side or both sides via a solder layer, characterised by: providing the base material, wherein the base material has a first surface on at least one side; providing the additional layer and arranging the solder layer between a second surface of the additional layer and the first surface such that when the additional layer is deposited on the first surface, the first surface of the base material is covered by the solder layer in a planar manner; wherein a thickness of the solder layer between the base material and the additional layer is smaller than 12 ?m; heating the base material and the additional layer on the first surface to at least partially melt the solder layer and connecting the base material to the at least one additional layer.

Abstract: The copper-indium-gallium (CuInGa) alloy is in particular to be used for the production of sputter targets, tubular cathodes and similar coating material sources. It has a phase corresponding to a Cu5Zn8 prototype phase in which the lattice sites of the zinc atoms (Zn) are occupied by gallium atoms (gallium-substituted Cu5Zn8 phase) and in which indium is simultaneously introduced into the elementary cell or phase, making up a proportion of up to 26 wt %.

Abstract: The copper-indium-gallium (CuInGa) alloy is in particular to be used for the production of sputter targets, tubular cathodes and similar coating material sources. It has a phase corresponding to a Cu5Zn8 prototype phase in which the lattice sites of the zinc atoms (Zn) are occupied by gallium atoms (gallium-substituted Cu5Zn8 phase) and in which indium is simultaneously introduced into the elementary cell or phase, making up a proportion of up to 26 wt %.