Patents by Inventor Stefan Eyring
Stefan Eyring has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240093985Abstract: Systems and methods for acquiring measurements of structures of a bonded sample are disclosed. Such systems and methods may include determining a first registration measurement of a first registration structure and a first interface target structure of a first sample, and a second registration measurement of a second sample prior to coupling the samples together. Such systems and methods may include, after such a coupling of the samples, determining a third registration measurement of the coupled sample at least partially by measuring the first registration structure through the top face of the first sample. Such systems and methods may include acquiring an overlay measurement based on the first registration measurement, the second registration measurement, and the third registration measurement. Such systems and methods may include adjusting an inter-sample coupling recipe based on the overlay measurement, where the inter-sample coupling recipe may include a final bonding recipe.Type: ApplicationFiled: September 16, 2022Publication date: March 21, 2024Inventors: Nimrod Shuall, Jordan Pio, Frank Laske, Stefan Eyring, Ohad Bachar
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Patent number: 11894214Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.Type: GrantFiled: October 24, 2022Date of Patent: February 6, 2024Assignee: KLA CORPORATIONInventors: Henning Stoschus, Stefan Eyring, Christopher Sears
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Patent number: 11862524Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: GrantFiled: September 28, 2021Date of Patent: January 2, 2024Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20230420278Abstract: A wafer metrology tool, such as a scanning electron microscope, can generate an image of a structure on a wafer. A simulated image of the structure also is determined from a design of the wafer. A contour of the structure in the image and a contour of the structure in the simulated image are determined. These contours are compared.Type: ApplicationFiled: June 24, 2022Publication date: December 28, 2023Inventors: Stefan Eyring, Zhijin Chen, Frank Laske
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Publication number: 20230324810Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: June 1, 2023Publication date: October 12, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20230326710Abstract: A simulated tool signal is determined from design data and tool properties of the tool making the measurements. A design-assisted composite signal is determined from measurements. An edge placement uniformity signal is then determined by comparing the simulated tool signal and the design-assisted composite signal. A shape and/or an area of the edge placement uniformity signal can be analyzed. The edge placement uniformity signal enables screening of structures with respect to wafer stochastics without the need to fully characterize all individual structures.Type: ApplicationFiled: October 17, 2022Publication date: October 12, 2023Inventor: Stefan Eyring
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Patent number: 11720031Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: GrantFiled: September 28, 2021Date of Patent: August 8, 2023Assignee: KLA CorporationInventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11703767Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: GrantFiled: September 28, 2021Date of Patent: July 18, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feier, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20230108539Abstract: A metrology system may receive design data including a layout of fabricated instances of a structure on a sample. The system may further receive detection signals from the metrology tool associated within a field of view including multiple of the fabricated instances of the structure. The system may further generate design-assisted composite data for the structure by combining detection signals from one or more common features of the structure associated with the fabricated instances of the structure within the field of view using the design data. The system may further generate one or more metrology measurements of the structure based on the design-assisted composite data.Type: ApplicationFiled: November 11, 2021Publication date: April 6, 2023Inventors: Stefan Eyring, Frank Laske
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Publication number: 20230045072Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.Type: ApplicationFiled: October 24, 2022Publication date: February 9, 2023Inventors: Henning Stoschus, Stefan Eyring, Christopher Sears
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Publication number: 20220413394Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220415725Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413395Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11508551Abstract: A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.Type: GrantFiled: November 22, 2019Date of Patent: November 22, 2022Assignee: KLA CORPORATIONInventors: Henning Stoschus, Stefan Eyring, Christopher Sears
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Patent number: 11481922Abstract: A field-of-view at a first modeled target location of a first target disposed on a specimen can be configured, which can include moving the stage relative to the detector. The first modeled target location is determined by summing a first design target location and a navigational error provided by an online model. A first image of the field-of-view is grabbed using the detector. The field-of-view at a second modeled target location of a second target disposed on the specimen is configured. Concurrent with configuring the field-of-view at the second modeled target location, using a processor, the position of a first actual target location is determined using the first image. The online model is updated with a difference between the first design target location and the first actual target location.Type: GrantFiled: April 7, 2020Date of Patent: October 25, 2022Assignee: KLA CORPORATIONInventor: Stefan Eyring
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Publication number: 20210405540Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Henning Stoschus, Stefan Eyring, Ulrich Pohlmann, Inna Steely-Tarshish, Nadav Gutman
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Patent number: 11209737Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.Type: GrantFiled: June 30, 2020Date of Patent: December 28, 2021Assignee: KLA CorporationInventors: Henning Stoschus, Stefan Eyring, Ulrich Pohlmann, Inna Steely-Tarshish, Nadav Gutman
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Publication number: 20210312656Abstract: A field-of-view at a first modeled target location of a first target disposed on a specimen can be configured, which can include moving the stage relative to the detector. The first modeled target location is determined by summing a first design target location and a navigational error provided by an online model. A first image of the field-of-view is grabbed using the detector. The field-of-view at a second modeled target location of a second target disposed on the specimen is configured. Concurrent with configuring the field-of-view at the second modeled target location, using a processor, the position of a first actual target location is determined using the first image. The online model is updated with a difference between the first design target location and the first actual target location.Type: ApplicationFiled: April 7, 2020Publication date: October 7, 2021Inventor: Stefan Eyring
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Publication number: 20200194224Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.Type: ApplicationFiled: November 22, 2019Publication date: June 18, 2020Inventors: Henning Stoschus, Stefan Eyring, Christopher Sears
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Patent number: 10474040Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.Type: GrantFiled: June 15, 2018Date of Patent: November 12, 2019Assignee: KLA-Tencor CorporationInventors: Frank Laske, Ulrich Pohlmann, Stefan Eyring, Nadav Gutman