Abstract: Systems and methods for acquiring measurements of structures of a bonded sample are disclosed. Such systems and methods may include determining a first registration measurement of a first registration structure and a first interface target structure of a first sample, and a second registration measurement of a second sample prior to coupling the samples together. Such systems and methods may include, after such a coupling of the samples, determining a third registration measurement of the coupled sample at least partially by measuring the first registration structure through the top face of the first sample. Such systems and methods may include acquiring an overlay measurement based on the first registration measurement, the second registration measurement, and the third registration measurement. Such systems and methods may include adjusting an inter-sample coupling recipe based on the overlay measurement, where the inter-sample coupling recipe may include a final bonding recipe.

Abstract: A simulated tool signal is determined from design data and tool properties of the tool making the measurements. A design-assisted composite signal is determined from measurements. An edge placement uniformity signal is then determined by comparing the simulated tool signal and the design-assisted composite signal. A shape and/or an area of the edge placement uniformity signal can be analyzed. The edge placement uniformity signal enables screening of structures with respect to wafer stochastics without the need to fully characterize all individual structures.

Abstract: A wafer metrology tool, such as a scanning electron microscope, can generate an image of a structure on a wafer. A simulated image of the structure also is determined from a design of the wafer. A contour of the structure in the image and a contour of the structure in the simulated image are determined. These contours are compared.

Abstract: Methods and systems for determining characteristic(s) of patterned feature(s) on a specimen are provided. One system includes a computer subsystem configured for comparing one or more images of a specimen generated by an imaging subsystem with one or more modes, respectively, to rendered images generated for the one or more modes and at least one instance of a design for the specimen corresponding to at least one of different values of at least one characteristic of one or more patterned features in the design. The computer subsystem is also configured for determining one or more quality merits for results of the comparing and optimizing the one or more quality merits using an optimization method. In addition, the computer subsystem is configured for determining characteristic(s) of the patterned feature(s) on the specimen from results of the optimizing.

Abstract: A metrology system may receive design data including a layout of fabricated instances of a structure on a sample. The system may further receive detection signals from the metrology tool associated within a field of view including multiple of the fabricated instances of the structure. The system may further generate design-assisted composite data for the structure by combining detection signals from one or more common features of the structure associated with the fabricated instances of the structure within the field of view using the design data. The system may further generate one or more metrology measurements of the structure based on the design-assisted composite data.

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

Abstract: Systems and methods for acquiring measurements of structures of a bonded sample are disclosed. Such systems and methods may include determining a first registration measurement of a first registration structure and a first interface target structure of a first sample, and a second registration measurement of a second sample prior to coupling the samples together. Such systems and methods may include, after such a coupling of the samples, determining a third registration measurement of the coupled sample at least partially by measuring the first registration structure through the top face of the first sample. Such systems and methods may include acquiring an overlay measurement based on the first registration measurement, the second registration measurement, and the third registration measurement. Such systems and methods may include adjusting an inter-sample coupling recipe based on the overlay measurement, where the inter-sample coupling recipe may include a final bonding recipe.

Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

Abstract: A wafer metrology tool, such as a scanning electron microscope, can generate an image of a structure on a wafer. A simulated image of the structure also is determined from a design of the wafer. A contour of the structure in the image and a contour of the structure in the simulated image are determined. These contours are compared.

Abstract: A simulated tool signal is determined from design data and tool properties of the tool making the measurements. A design-assisted composite signal is determined from measurements. An edge placement uniformity signal is then determined by comparing the simulated tool signal and the design-assisted composite signal. A shape and/or an area of the edge placement uniformity signal can be analyzed. The edge placement uniformity signal enables screening of structures with respect to wafer stochastics without the need to fully characterize all individual structures.

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

Abstract: A metrology system may receive design data including a layout of fabricated instances of a structure on a sample. The system may further receive detection signals from the metrology tool associated within a field of view including multiple of the fabricated instances of the structure. The system may further generate design-assisted composite data for the structure by combining detection signals from one or more common features of the structure associated with the fabricated instances of the structure within the field of view using the design data. The system may further generate one or more metrology measurements of the structure based on the design-assisted composite data.

Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

Abstract: A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.