Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.

Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

Abstract: An apparatus and a method are disclosed for the measurement of pattern placement and/or edge placement and/or size of a pattern on a surface of a substrate for the semiconductor industry. At least one source for detection and at least one assigned detector are used to measure the positions of a pattern on a substrate. With a movable stage the substrate is moved while detection takes place. A displacement measurement system determines the position of the movable stage during the movement. A computer is used for correlating detected signals of the at least one detector along the derived trace line with the actual positions of the stage during the movement of the stage.

Abstract: An apparatus and a method are disclosed for the measurement of pattern placement and/or edge placement and/or size of a pattern on a surface of a substrate for the semiconductor industry. At least one source for detection and at least one assigned detector are used to measure the positions of a pattern on a substrate. With a movable stage the substrate is moved while detection takes place. A displacement measurement system determines the position of the movable stage during the movement. A computer is used for correlating detected signals of the at least one detector along the derived trace line with the actual positions of the stage during the movement of the stage.

Abstract: A method for correcting optical errors occurring in coordinates of positions of a plurality of targets measured via an imaging system comprising a field of view. The plurality of targets includes a first array of targets and a second array of targets overlapping the first array of targets, and a portion of the plurality of targets are outside of the field of view.

Abstract: A method for correcting optical errors occurring in coordinates of positions of a plurality of targets measured via an imaging system comprising a field of view. The plurality of targets includes a first array of targets and a second array of targets overlapping the first array of targets, and a portion of the plurality of targets are outside of the field of view.

Abstract: A method is disclosed for correcting errors introduced by optical distortions or aberrations in the measured values of coordinates of targets of an array of targets, like for example structures on a wafer or a photolithography mask. The array of targets is placed into a field of view of an imaging system via which the coordinates are to be measured. The array of targets is placed at different relative positions with respect to the field of view, and for each relative position the coordinates of the targets relative to the array of targets are determined by measurements. From the results of these measurements an alignment function, giving a correction for optical errors as a function of the position in the field of view, is derived. The measured coordinates are corrected by the alignment function. The corrected coordinates can be used to identify registration errors of a mask writer.

Abstract: A method is disclosed for correcting errors introduced by optical distortions or aberrations in the measured values of coordinates of targets of an array of targets, like for example structures on a wafer or a photolithography mask. The array of targets is placed into a field of view of an imaging system via which the coordinates are to be measured. The array of targets is placed at different relative positions with respect to the field of view, and for each relative position the coordinates of the targets relative to the array of targets are determined by measurements. From the results of these measurements an alignment function, giving a correction for optical errors as a function of the position in the field of view, is derived. The measured coordinates are corrected by the alignment function. The corrected coordinates can be used to identify registration errors of a mask writer.