Abstract: A housing is specified for an electronic component having at least two connecting parts (4a, 4b), which are partially in contact with the housing. The conductivity of at least subareas of the housing are set in a defined manner and current paths through the housing are formed between the connecting parts. The housing thus has a defined resistance (2), which is connected in parallel with an electronic component (1), and provides ESD protection for the component (1).

Abstract: A light-emitting power semiconductor device is placed on a metillic substrate structure with the formation of a good heat-transfer contact, in which a plastic protective body surrounds the power semiconductor device, leaving exposed a light exit region in the nature of a cap.

Abstract: A luminescence diode chip with a semiconductor body having an epitaxially grown semiconductor layer sequence with an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode chip, which electromagnetic radiation, at least in part, is coupled out via the radiation coupling-out area. The luminescence diode chip has a radiation-transmissive covering body that is arranged downstream of the radiation coupling-out area in an emission direction of the luminescence diode chip and has a first main surface facing the radiation coupling-out area, a second main surface remote from the radiation coupling-out area, and also side faces connecting the first and second main areas.

Abstract: A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area.

Abstract: A light source, such as for a projection system, having a plurality of semiconductor chips and at least two different, electromagnetic-radiation-emitting chip types with different emission spectra, each semiconductor chip having a chip coupling-out area through which radiation is coupled out. Furthermore, the light source has a plurality of primary optical elements, each semiconductor chip being assigned a primary optical element, which in each case has a light input and a light output and reduces the divergence of at least part of the radiation emitted by the semiconductor chip during the operation thereof. The semiconductor chips with the primary optical elements are arranged in at least two groups that are spatially separate from one another, with the result that the groups emit separate light cones during operation of the semiconductor chips. The separate light cones of the groups are superposed by means of a secondary optical arrangement to form a common light cone.

Abstract: A method for producing semiconductor laser components in which, a number of chip mounting areas are formed on a cooling element having an electrically insulating carrier that is in the form of a plate. A number of semiconductor laser chips are then fit to the cooling element, with one semiconductor laser chip being arranged on each chip mounting area. Finally, the cooling element, with the semiconductor bodies fit on it, is subdivided into a number of semiconductor laser components.

Abstract: In a process for producing a ceramic housing (1), first of all a ceramic base body (4) comprising a ceramic base (2) and side parts (3) is produced. Then, a metal frame (7) is placed onto the ceramic base body (4) and a window (11) is soldered onto a side opening (6). After a photoactive semiconductor chip has been introduced into the ceramic base body (4), the ceramic housing (1) is closed off using a metal cover (12).

Abstract: A method for producing semiconductor laser components in which, a number of chip mounting areas are formed on a cooling element having an electrically insulating carrier that is in the form of a plate. A number of semiconductor laser chips are then fit to the cooling element, with one semiconductor laser chip being arranged on each chip mounting area. Finally, the cooling element, with the semiconductor bodies fit on it, is subdivided into a number of semiconductor laser components.

Abstract: An apparatus for producing a chip-substrate connection, in particular by soldering a semiconductor chip on a substrate. The apparatus has a support, on which the substrate is temporarily supported, and a heating device which is provided for forming the chip-substrate connection. The heating device has a radiation source in the form of a laser in the infrared wavelength range. The support is formed by a heat body, which is assigned to the chip-substrate connection and is heated with thermal radiation by the radiation source. A surface of the heat body is coated with a material, in particular a material containing chromium, exhibiting high absorption with respect to the light radiation emitted by the radiation source.

Abstract: A laser device includes a component emitting laser radiation and at least one element for beam guidance or beam projection, which are disposed in a common housing. The element for beam guidance or beam projection is attached in the housing through the use of silicone.