Abstract: In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.

Abstract: A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.

Abstract: The present invention provides a method for fabricating a semiconductor component having a substrate (1) and a dielectric layer (70) provided on or in the substrate (1), the dielectric layer (7) being deposited in alternating self-limiting monolayer form, in the form of at least two different precursors, by means of an ALD process. There is provision for conditioning of the surface of the substrate (1) prior to the deposition of a first monolayer of a first precursor with respect to a reactive ligand of the first precursor.