Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: The present invention relates to a method for controlling a lighting device to produce user customisable lighting effects, the method comprising: calculating a time varying lighting value based on at least one simulation parameter; and outputting said time varying lighting value thereby to simulate a lighting effect. The invention also relates to a controller for controlling a lighting device to produce a lighting effect, the controller comprising: a calculating device adapted to calculate a time varying lighting value based on at least one simulation parameter; and an output adapted to control a lighting device according to the determined variation of lighting over time. In a further aspect of the present invention there is provided a light with the built-in capability to generate a range of customizable cinematic special lighting effects, by modulating the speed, duration, power/brightness, and/or colour temperature of the light output.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: The present invention relates to a method for controlling a lighting device to produce user customisable lighting effects, the method comprising: calculating a time varying lighting value based on at least one simulation parameter; and outputting said time varying lighting value thereby to simulate a lighting effect. The invention also relates to a controller for controlling a lighting device to produce a lighting effect, the controller comprising: a calculating device adapted to calculate a time varying lighting value based on at least one simulation parameter; and an output adapted to control a lighting device according to the determined variation of lighting over time. In a further aspect of the present invention there is provided a light with the built-in capability to generate a range of customizable cinematic special lighting effects, by modulating the speed, duration, power/brightness, and/or colour temperature of the light output.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes SrxCa1?xAlSiN3:Eu, wherein x is: 0.8<x?1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein, in a x-ray structure analysis, the phosphor in orthorhombic description exhibits a reflection (R) having Miller indices 1 2 1, wherein the phosphor has a structure including (Si/Al)N4 tetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: A dimmable light source for emitting white overall radiation may include a dimmer and a light-emitting diode. The dimmer may vary a current intensity of a current for operating the light-emitting diode during the operation of the light source. The LED may include a semiconductor layer sequence to emit primary radiation, and the LED may further include a conversion element configured to at least partially convert the primary radiation into secondary radiation having a first emission band with a first emission maximum ranging from 400 nm to 500 nm and a second emission band with a second emission maximum ranging from 510 nm to 700 nm. A relative intensity of the first emission band may reduce with decreasing current intensity of the current for operating the LED, and a relative intensity of the second emission band may increase with decreasing current intensity of the current for operating the LED.

Abstract: A phosphor and a lighting device are disclosed. In an embodiment a lighting device includes a first phosphor disposed in a beam path of the primary radiation source, wherein the first phosphor has the formula Sr(SraM1?a)Si2Al2(N,X)6:D,A,B,E,G,L, wherein element M is selected from Ca, Ba, Mg or combinations thereof, wherein element D is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals or Yb, wherein element A is selected from divalent metals different than those of the elements M and D, wherein element B is selected from trivalent metals, wherein element E is selected from monovalent metals, wherein element G is selected from tetravalent elements, wherein element L is selected from trivalent elements, wherein element X is selected from O or halogen, and wherein a parameter a is between 0.6 and 1.0.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: A luminescent material may include the formula (MB) (TA)3?2x(TC)1+2xO4?4xN4x:E where 0<x<0.875. —TA may be selected from a group of monovalent metals, such as Li, Na, Cu, Ag, and combinations thereof. —MB may be selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn, and combinations thereof. —TC may be selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals, and combinations thereof. —E may be selected from a group including Eu, Mn, Ce, Yb, and combinations thereof.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, —E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.2 and 0?m<0.

Abstract: The present invention relates to a new peptide called Antisecretory Factor (AF) 17 which is an isolated recombinant and/or synthetically produced which has a t½ of at least 1.8 h. The peptide is e.g. useful for normalizing pathological fluid transport and/or inflammatory reactions in animals and in humans. AF-17 and pharmaceutical compositions of AF-17 can e.g. be used for treating and/or preventing TBI and/or secondary brain injuries associated with TBI, as well as for treating and/or preventing acquired brain injuries and to optimize cancer treatment.

Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: A luminescent material may include the formula (MB) (TA)3?2x(TC)1+2xO4?4xN4x:E where 0<x<0.875. —TA may be selected from a group of monovalent metals, such as Li, Na, Cu, Ag, and combinations thereof. —MB may be selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn, and combinations thereof. —TC may be selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals, and combinations thereof. —E may be selected from a group including Eu, Mn, Ce, Yb, and combinations thereof.

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Abstract: The present invention relates to a process for producing an egg yolk with a very high content of antisecretory factor (AF) proteins, in particular with a very high content of AF protein fragment consisting essentially of the amino acid sequence as shown in SEQ.ID.NO.1 (AF-16) and/or in SEQ.ID.NO.2 (AF-8), said process comprising for at least 4 weeks feeding a poultry, such as a hen, an AF-16 inducing pelleted feed for poultry comprising at least 0.14% free tryptophan, such as 1-2 g tryptophan/kg feed, and thereafter harvesting egg from said poultry, separating egg yolk from egg white, and alternatively spray-drying, grinding, leaching, extracting, evaporating, membrane filtrating, and/or or freeze-drying said egg yolk.