Abstract: A device replaces roller sets on pylons of cable cars. The device contains a replacing vehicle which can be moved along a cable of the cable car and at least two winches having cables by which the roller set to be replaced can be lowered and a new roller set can be raised. The replacing vehicle contains at least two interconnected vehicles which by way of clamps are connected to the cable.

Abstract: A pumped-storage power plant, such as an electric unit can include a frequency converter and a rotating electric synchronous machine, the machine being provided in a cavern. The frequency converter can include at least two elements which can be used as inverters or as rectifiers according to the operating mode of the machine, for example during the operation of the motor or during the operation of the generator. The machine-side element can be provided within the cavern, and the network-side element can be provided outside of the cavern.

Abstract: The invention relates to a pumped storage power plant, in particular to an electric unit 1 comprising a converter 3, a rotating electric synchronous machine 4 and a charging unit 5, wherein the charging unit 5 has at least one transformer 6 and one switch 7 and can be connected to a supply grid 2, on the one hand, and to the converter 3, on the other. The invention also relates to a method for using the electric unit 1 comprising at least opening a generator switch 15 in order to disconnect the synchronous machine 4 from the converter 3; charging cells of the converter 3 which have capacitors and/or accumulators by closing a switch 7 of the charging unit 5, wherein by closing the switch 7 the converter 3 is connected to the supply grid 2 via the transformer 6 of the charging unit 5; opening the switch 7 of the charging unit 5 after the complete charging of the converter 3; and closing the generator switch 15 in order to connect the synchronous machine 4 to the converter 3 and/or the secondary line 11.

Abstract: A device replaces roller sets on pylons of cable cars. The device contains a replacing vehicle which can be moved along a cable of the cable car and at least two winches having cables by which the roller set to be replaced can be lowered and a new roller set can be raised. The replacing vehicle contains at least two interconnected vehicles which by way of clamps are connected to the cable.

Abstract: A semiconductor power module includes at least two sub modules. The sub modules include at least one respective transistor having a collector, an emitter, and a gate. The module includes a connection arrangement having a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components, at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components, and at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

Abstract: An energy generation system includes a turbine, an electric generator, a step-up transformer, and a converter. The turbine is operable to extract energy from a fluid flow and convert the extracted energy into mechanical energy. The electric generator is operable to convert the mechanical energy from the turbine into AC electrical energy. The step-up transformer is operable to transfer the AC electrical energy at a lower voltage from the electric generator to a higher voltage. The converter is operable to convert the AC electrical energy at the higher voltage to DC electrical energy. The converter includes a converter leg for a phase of the AC electrical energy. The converter leg has an upper arm with a first plurality of sub-modules and a lower arm with a second plurality of sub-modules. Each sub-module is operable to function as a controlled voltage source.

Abstract: A pumped-storage power plant, such as an electric unit can include a frequency converter and a rotating electric synchronous machine, the machine being provided in a cavern. The frequency converter can include at least two elements which can be used as inverters or as rectifiers according to the operating mode of the machine, for example during the operation of the motor or during the operation of the generator. The machine-side element can be provided within the cavern, and the network-side element can be provided outside of the cavern.

Abstract: An energy generation system includes a turbine, an electric generator, a step-up transformer, and a converter. The turbine is operable to extract energy from a fluid flow and convert the extracted energy into mechanical energy. The electric generator is operable to convert the mechanical energy from the turbine into AC electrical energy. The step-up transformer is operable to transfer the AC electrical energy at a lower voltage from the electric generator to a higher voltage. The converter is operable to convert the AC electrical energy at the higher voltage to DC electrical energy. The converter includes a converter leg for a phase of the AC electrical energy. The converter leg has an upper arm with a first plurality of sub-modules and a lower arm with a second plurality of sub-modules. Each sub-module is operable to function as a controlled voltage source.

Abstract: A method and a device for exchanging roller batteries on supports of cableway installations, include driving a service vehicle towards the support, lifting a cable which runs on the roller battery from the roller battery, then dismounting the roller battery and installing a new roller battery and finally relaying the cable on the roller battery.

Abstract: In order to produce a power semiconductor for operation at high blocking voltages, there is produced on a lightly doped layer having a doping of a first charge carrier type a medium-doped layer of the same charge carrier type. A highly doped layer is produced at that side of the medium-doped layer which is remote from the lightly doped layer, of which highly doped layer a part with high doping that remains in the finished semiconductor forms a second stop layer, wherein the doping of the highly doped layer is higher than the doping of the medium-doped layer. An electrode is subsequently indiffused into the highly doped layer. The part with low doping that remains in the finished semiconductor forms the drift layer and the remaining medium-doped part forms the first stop layer.

Abstract: A semiconductor power module includes at least two sub modules. The sub modules include at least one respective transistor having a collector, an emitter, and a gate. The module includes a connection arrangement having a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components, at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components, and at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

Abstract: A method and a device for exchanging roller batteries on supports of cableway installations, include driving a service vehicle towards the support, lifting a cable which runs on the roller battery from the roller battery, then dismounting the roller battery and installing a new roller battery and finally relaying the cable on the roller battery.

Abstract: In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (81), which is disposed in the channel region (7) so that it encompasses the one or more source regions (6), but does not adjoin the second main surface underneath the gate oxide layer (41), and a second base region (82) is disposed in the semiconductor substrate (2) underneath the base contact area (821) so that it partially overlaps with the channel region (7) and with the first base region (81).

Abstract: In order to produce a power semiconductor for operation at high blocking voltages, there is produced on a lightly doped layer having a doping of a first charge carrier type a medium-doped layer of the same charge carrier type. A highly doped layer is produced at that side of the medium-doped layer which is remote from the lightly doped layer, of which highly doped layer a part with high doping that remains in the finished semiconductor forms a second stop layer, wherein the doping of the highly doped layer is higher than the doping of the medium-doped layer. An electrode is subsequently indiffused into the highly doped layer. The part with low doping that remains in the finished semiconductor forms the drift layer and the remaining medium-doped part forms the first stop layer.

Abstract: In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (81), which is disposed in the channel region (7) so that it encompasses the one or more source regions (6), but does not adjoin the second main surface underneath the gate oxide layer (41), and a second base region (82) is disposed in the semiconductor substrate (2) underneath the base contact area (821) so that it partially overlaps with the channel region (7) and with the first base region (81).

Abstract: In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail harrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base—resulting from the wafer—from anode to cathode.

Abstract: In a method of manufacturing a semiconductor element (6) having a cathode (3) and an anode (5), the starting material used is a relatively thick wafer (1) to which, as a first step, a barrier region (21) is added on the anode side. It is then treated on the cathode side, and the thickness of the wafer (1) is then reduced on the side opposite to the cathode (3), and an anode (5) is produced on this side in a further step. The result is a relatively thin semiconductor element which can be produced economically and without epitaxial layers.

Abstract: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximun blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. This reduces the length and the costs of the stack for hihg-voltage switch since fewer components are required for the same blocking voltages, in particular fewer modules and cooling elements.

Abstract: In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail barrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base—resulting from the wafer—from anode to cathode.

Abstract: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series.