Abstract: Provided are crystalline forms of a KRAS G12C inhibitor compound and to processes for their preparation. Furthermore, provided is pharmaceutical composition comprising said crystalline forms, and at least one pharmaceutically acceptable excipient. The pharmaceutical composition can be used as a medicament, in particular for the treatment of cancer, and KRAS G12C-mutant cancer.

Abstract: The invention relates to a switch system comprising one or more optical transceiver assemblies (14) connected to a switch ASIC (29).

Abstract: The present invention relates to a polyol composition consisting of a first component and a second component, wherein the first component contains a polyol having had OH functionality in the range from 1.5 to 4 and an average molecular weight in the range from 250 to 15'000 g/mol, a diol having at least two hydroxyl groups joined via a C2 to C9 carbon chain, and a compound having at least one thiol group. In addition, one of the two components additionally comprises at least one metal catalyst for the reaction of hydroxyl groups and isocyanate groups which is capable of forming thio complexes, and where the molar ratio of all NCO groups of the polyisocyanates I to all OH groups of the polyols=0.9:1-1.4:1, especially 1.05:1-1.

Abstract: A photonic component having a photonically integrated chip and a fibre mounting, wherein the fibre mounting has: at least one groove, into which an optical fibre is placed, and at least one mirror surface, which reflects radiation from the fibre in the direction of the photonically integrated chip and/or reflects radiation from the photonically integrated chip in the direction of the fibre. A chip stack comprising at least two chips is arranged between the photonically integrated chip and the fibre mounting, the chip stack has at least two through holes and in each case a guide pin, which positions the chip stack and the fibre mounting relative to one another, passes through the at least two through holes of the chip stack.

Abstract: The invention relates to a photonic component (1) having at least one semiconductor laser amplifier (200), which has at least one first mirror surface (210a) for coupling and/or decoupling optical radiation (S). The first mirror surface (210a) of the semiconductor laser amplifier (200) is coupled to a photonically integrated chip (100), wherein the chip (100) is arranged such that the chip can emit optical radiation (S) from the chip top side (O100) thereof in the direction of the first mirror surface (210a) and couple said radiation in the semiconductor laser amplifier (200), and wherein the emitting of the radiation (S) away from the chip top side (O100) occurs in the direction of the first mirror surface (210a) at an angle of 90°±20°, in particular perpendicular, to the chip top side (O100).

Abstract: Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

Abstract: A photonic component having a photonically integrated chip and a fibre mounting, wherein the fibre mounting has: at least one groove, into which an optical fibre is placed, and at least one mirror surface, which reflects radiation from the fibre in the direction of the photonically integrated chip and/or reflects radiation from the photonically integrated chip in the direction of the fibre. A chip stack comprising at least two chips is arranged between the photonically integrated chip and the fibre mounting, the chip stack has at least two through holes and in each case a guide pin, which positions the chip stack and the fibre mounting relative to one another, passes through the at least two through holes of the chip stack.

Abstract: The invention relates to a switch system comprising one or more optical transceiver assemblies (14) connected to a switch ASIC (29).

Abstract: An optoelectronic device that includes at least one adjustable optical damping member arranged upstream of a photodetector and damps the optical radiation passing to the photodetector. The device is configured so that an electrical output of an amplifier is connected directly or indirectly to the adjustable optical damping member. An output signal of the amplifier or a control signal formed therewith drives the optical damping member, and the photodetector, the amplifier and the damping member are integrated in the same semiconductor substrate.

Abstract: The invention relates to a photonic component (10) having a photonically integrated chip (1) and a fibre mounting (5), wherein the fibre mounting (5) has: at least one groove (52), into which an optical fibre (30) is placed, and at least one mirror surface (52), which reflects radiation (S) from the fibre (30) in the direction of the photonically integrated chip (1). According to the invention a chip stack (20) comprising at least two chips is arranged between the photonically integrated chip (1) and the fibre mounting (5), the chip stack (20) has at least two through holes (21) and in each case a guide pin (40), which positions the chip stack (20) and the fibre mounting (5) relative to one another, passes through the at least two through holes (21) of the chip stack (20).

Abstract: An optoelectronic component includes a chip having a substrate and at least one optical waveguide integrated in the chip. The electro-optical component may be monolithically integrated in one or a plurality of semiconductor layers of the chip arranged on the substrate top side of the substrate, or on the substrate top side of the substrate. At least one electrical connection of the monolithically integrated electro-optical component is connected by means of a connection line to a conductor track connection situated below the substrate rear side. The connection line extends through a hole in the substrate from the electro-optical component to the conductor track connection situated below the substrate rear side.

Abstract: Techniques and mechanisms for forming a bond between wafers using a compliant layer. In an embodiment, a layer or layers of one or more compliant materials is provided on a first surface of a first wafer, and the one or more compliant layers are subsequently bonded to a second surface of a second wafer. The bonded wafers are heated to an elevated temperature at which a compliant layer exhibits non-elastic deformations to facilitate relaxation of stresses caused by wafer distortions. In another embodiment, a material of the compliant layer exhibits viscoelastic behavior at room temperature, wherein stress is mitigated by allowing wafer distortion to relax at room temperature.

Abstract: The invention relates to a component (10) with a photodetector (PD) and an electrical amplifier (TIA) connected to the photodetector (PD), wherein the photodetector (PD) and the amplifier (TIA) are integrated in the same semiconductor substrate (11). According to the invention, at least one adjustable optical damping member (30) is arranged in front of the photodetector (PD), which damping member damps or at least can damp optical radiation arriving at the photodetector (PD), an electrical output (A) of the amplifier (TIA) is connected directly or indirectly to the adjustable optical damping member (30) and an output signal (AS) of the amplifier (TIA) or a control signal (ST) formed therewith controls the optical damping member (30), and the photodetector (PD), the amplifier (TIA) and the damping member (30) are integrated in the same semiconductor substrate (11).

Abstract: The invention relates to a photonic component (10) having a photonically integrated chip (1) and a fibre mounting (5), wherein the fibre mounting (5) has: at least one groove (52), into which an optical fibre (30) is placed, and at least one mirror surface (52), which reflects radiation (S) from the fibre (30) in the direction of the photonically integrated chip (1). According to the invention a chip stack (20) comprising at least two chips is arranged between the photonically integrated chip (1) and the fibre mounting (5), the chip stack (20) has at least two through holes (21) and in each case a guide pin (40), which positions the chip stack (20) and the fibre mounting (5) relative to one another, passes through the at least two through holes (21) of the chip stack (20).

Abstract: An optoelectronic component including an optical waveguide integrated into a plane of the component. The optical waveguide configured to guide optical radiation in the plane. The component including a coupling element connected to the waveguide and coupling optical radiation into the waveguide along the main coupling path. The degree of coupling efficiency of the coupling element is less than one in respect to the main coupling path. The coupling element outputs optical loss radiation along a secondary coupling path. The optical loss radiation is proportional to the radiation transferred along the main coupling path. The optoelectronic component includes a detector connected to the coupling element that registers the optical loss radiation and produces a detector signal. The optoelectronic component includes a control unit configured to influence at least one operating variable of the optoelectronic component based on the detector signal.

Abstract: An embodiment of the invention relates to an optical signal generator comprising an optical emitter configured to generate a beam of optical radiation, a first and second beam deflecting element, a modulator being located between the beam deflecting elements, a phase shifter located between the beam deflecting elements, a control unit configured to control the phase-shift of the phase shifter, wherein the first and second beam deflecting elements, the phase shifter and the modulator are located in the same plane, wherein the beam generated by the optical emitter is angled relative to said plane, wherein said first beam deflecting element is configured to deflect the emitter's beam into the plane towards the modulator, said modulator being configured to modulate the emitter's radiation and outputting a modulated radiation, wherein said second beam deflecting element is configured to deflect the modulated radiation off the plane towards an output port of the signal generator, wherein the modulator is configured

Abstract: A photonic component that includes a photonically integrated chip and a fiber holder that is mechanically connected to said chip. The fiber holder includes at least one groove with an optical fiber laid therein. The chip includes a substrate whose substrate base material is a semiconductor material, an integrated optical waveguide that is integrated into one or more material layers of the chip, which layers are wave guiding and positioned on the substrate, a coupler formed in the optical waveguide or connected to said optical waveguide, particularly a grating coupler, and an optical diffraction and refraction structure that is integrated into one or more material layers of the chip which are positioned above the optical coupler when viewed from the substrate, and that shapes the beam prior to its being coupled into the waveguide or after being coupled out of the waveguide.

Abstract: An embodiment of the invention relates to an optical assembly comprising an optical emitter configured to generate a beam of optical radiation, a cap unit holding the optical emitter, a photonic chip comprising a coupler, and an intermediate chip arranged between the cap unit and the photonic chip, wherein the cap unit comprises a recess having a bottom section and a sidewall, wherein the optical emitter is mounted on the bottom section of the recess, wherein a section of the sidewall forms a mirror section angled with respect to the bottom section and configured to reflect said beam of optical radiation towards the coupler, and wherein the intermediate chip comprises a lens formed at a lens section of the intermediate chip's surface that faces the cap unit, said lens being configured to focus the reflected optical beam towards the coupler.

Abstract: An embodiment of the invention relates to an optical assembly comprising an optical emitter configured to generate a beam of optical radiation, a cap unit holding the optical emitter, a photonic chip comprising a coupler, and an intermediate chip arranged between the cap unit and the photonic chip, wherein the cap unit comprises a recess having a bottom section and a sidewall, wherein the optical emitter is mounted on the bottom section of the recess, wherein a section of the sidewall forms a mirror section angled with respect to the bottom section and configured to reflect said beam of optical radiation towards the coupler, and wherein the intermediate chip comprises a lens formed at a lens section of the intermediate chip's surface that faces the cap unit, said lens being configured to focus the reflected optical beam towards the coupler.

Abstract: The invention relates to a photonic component (1) having at least one semiconductor laser amplifier (200), which has at least one first mirror surface (210a) for coupling and/or decoupling optical radiation (S). The first mirror surface (210a) of the semiconductor laser amplifier (200) is coupled to a photonically integrated chip (100), wherein the chip (100) is arranged such that the chip can emit optical radiation (S) from the chip top side (O100) thereof in the direction of the first mirror surface (210a) and couple said radiation in the semiconductor laser amplifier (200), and wherein the emitting of the radiation (S) away from the chip top side (O100) occurs in the direction of the first mirror surface (210a) at an angle of 90°±20°, in particular perpendicular, to the chip top side (O100).