Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.

Abstract: This disclosure is directed to techniques that may accurately determine the amount of current flowing through a power switch circuit by measuring the voltage across the inherent impedance of the circuit connections. One connection may include a low impedance connection between the power switch output and ground, where the low impedance connection may be on the order of milliohms. By using a four-wire measurement, the sensing connections are not in the current path, so the measured value may not be affected by the current. The connection that makes up the current path can be accomplished with a variety of conductive materials. Conductive materials may have a temperature coefficient of resistivity that may impact a measurement of electric current as the temperature changes. Measuring the temperature of the current path, along with the voltage across the connection, may allow a more accurate current measurement.

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Abstract: In some examples, a half-bridge circuit includes a first switch including a first load terminal, a second load terminal, a first control terminal, and a second control terminal that is electrically isolated from the first control terminal of the first switch. The half-bridge circuit further includes a second switch including a first load terminal electrically connected to the second load terminal of the first switch, a second load terminal, and a control terminal.

Abstract: A baffle or reinforcement element for sealing and/or reinforcing a cavity, in particular a cavity of a vehicle, comprising: a carrier plate with a first plate surface and a second plate surface, and at least a first and a second expandable element, in particular expandable foam element, supported by the carrier plate, wherein the first expandable element covers, at least substantially, the entire first plate surface and forms a first outer surface of the baffle or reinforcement element and the second expandable element covers, at least substantially, the entire second plate surface thereby forming a second outer surface of the baffle element.

Abstract: A motor vehicle has a body, wherein the body has body openings, in which auxiliary devices such as lamps, turn indicators, or the like are arranged. A body wall surrounds the body opening and has a body flange formed at the particular body opening, to which body wall a cup-shaped insert is fastened, wherein the particular auxiliary device is fastened to the cup-shaped insert. The cup-shaped insert has a peripheral or partially peripheral, bent flange segment having a fastening segment, which extends parallel to an inner surface of the body wall surrounding the body opening. A glue or an adhesive layer is applied between the outer surface of the fastening segment of the flange segment of the cup-shaped insert and the inner surface of the body wall. A seal is arranged in an intermediate space between a flange segment of the cup-shaped insert and the body wall.

Abstract: An interconnect module includes a metal clip having a first end section, a second end section and a middle section extending between the first and the second end sections. The first end section is configured for external attachment to a bare semiconductor die or packaged semiconductor die attached to a carrier or to a metal region of the carrier. The second end section is configured for external attachment to a different metal region of the carrier or to a different semiconductor die or packaged semiconductor die attached to the carrier. The module further includes a magnetic field sensor secured to the metal clip. The magnetic field sensor is operable to sense a magnetic field produced by current flowing through the metal clip. The interconnect module can be used to form a direct electrical connection between components and/or metal regions of a carrier to which the module is attached.

Abstract: A support for a motor vehicle body-in-white includes a straight longitudinal portion that includes at least one cavity which is delimited by walls of the support and inside of which a reinforcing element is accommodated and is fastened in the longitudinal direction of the support. The reinforcing element is force-locked to the support so as to be fastened in the longitudinal direction of the support.

Abstract: A motor vehicle has a body, wherein the body has body openings, in which auxiliary devices such as lamps, turn indicators, or the like are arranged. A body wall surrounds the body opening and has a body flange formed at the particular body opening, to which body wall a cup-shaped insert is fastened, wherein the particular auxiliary device is fastened to the cup-shaped insert. The cup-shaped insert has a peripheral or partially peripheral, bent flange segment having a fastening segment, which extends parallel to an inner surface of the body wall surrounding the body opening. A glue or an adhesive layer is applied between the outer surface of the fastening segment of the flange segment of the cup-shaped insert and the inner surface of the body wall. A seal is arranged in an intermediate space between a flange segment of the cup-shaped insert and the body wall.

Abstract: In some examples, a half-bridge circuit includes a first switch including a first load terminal, a second load terminal, a first control terminal, and a second control terminal that is electrically isolated from the first control terminal of the first switch. The half-bridge circuit further includes a second switch including a first load terminal electrically connected to the second load terminal of the first switch, a second load terminal, and a control terminal.

Abstract: This disclosure is directed to techniques that may accurately determine the amount of current flowing through a power switch circuit by measuring the voltage across the inherent impedance of the circuit connections. One connection may include a low impedance connection between the power switch output and ground, where the low impedance connection may be on the order of milliohms. By using a four-wire measurement, the sensing connections are not in the current path, so the measured value may not be affected by the current. The connection that makes up the current path can be accomplished with a variety of conductive materials. Conductive materials may have a temperature coefficient of resistivity that may impact a measurement of electric current as the temperature changes. Measuring the temperature of the current path, along with the voltage across the connection, may allow a more accurate current measurement.

Abstract: A baffle or reinforcement element for sealing and/or reinforcing a cavity, in particular a cavity of a vehicle, comprising: a carrier plate with a first plate surface and a second plate surface, and at least a first and a second expandable element, in particular expandable foam element, supported by the carrier plate, wherein the first expandable element covers, at least substantially, the entire first plate surface and forms a first outer surface of the baffle or reinforcement element and the second expandable element covers, at least substantially, the entire second plate surface thereby forming a second outer surface of the baffle element.

Abstract: The invention relates to a multilayered film element (1) comprising a first component, more particularly an RFID antenna in the form of a multilayered film element, and to a method for fixing a second component on a film element (1) of this type. The film element (1) has a dielectric layer (10) having a front side (10V) and a rear side (10R). The film element (1) has a layer (11, 12) forming a first component, and at least one component contact area (23, 24) arranged on the front side (10V) and connected to the first component. The film element (1) has at least one thermode contact layer (30) which is arranged on the dielectric layer (10) and which, as seen perpendicularly to the dielectric layer (10), is arranged in the region of the at least one component contact area (23, 24). The thermode contact layer (30) has a thermode contact area (32) on a side facing away from the dielectric layer (10), said thermode contact area forming an outer surface of the film element (1).

Abstract: A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as the semiconductor die and positioned in close proximity to a current pathway of the semiconductor die so that the magnetic field sensor can sense a magnetic field produced by current flowing in the current pathway. The magnetic field sensor includes a first magnetic field sensing component galvanically isolated from the current pathway and positioned so that a magnetic field produced by current flowing in the current pathway impinges on the first magnetic field sensing component in a first direction. The magnetic field sensor also includes a second magnetic field sensing component galvanically isolated from the current pathway and positioned so that the magnetic field impinges on the second magnetic field sensing component in a second direction different than the first direction.

Abstract: A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.

Abstract: A support for a motor vehicle body-in-white includes a straight longitudinal portion that includes at least one cavity which is delimited by walls of the support and inside of which a reinforcing element is accommodated and is fastened in the longitudinal direction of the support. The reinforcing element is force-locked to the support so as to be fastened in the longitudinal direction of the support.