Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Abstract: An interconnect package integrates a photonic die, an electronic die, and a switch ASIC into one package. At least some of the components in the electronic die, such as, for example, the serializer/deserializer circuits, transceivers, clocking circuitry, and/or control circuitry are integrated into the switch ASIC to produce an integrated switch ASIC. The photonic die is attached and electrically connected to the integrated switch ASIC.

Abstract: A method of using an integrated circuit includes monitoring a current between a first photodetector (PD) and an electronic circuit. The method further includes determining whether the monitored current is abnormal. The method further includes controlling a resonant structure to optically couple a first waveguide connected to the first PD to a second waveguide connected to a second PD, different from the first PD, in response to a determination that the monitored current is abnormal.

Abstract: A method of forming an optical device is provided that can include forming a backside reflector layer, and forming a cladding layer on the backside reflector layer. The method can further include forming a grating layer on the cladding layer, and forming a receiving reflector layer on the cladding layer. The receiving reflector layer can include an opening for receiving optical signal to at least the grating layer.

Abstract: A benchmark device and a method for evaluating a semiconductor wafer are provided. The benchmark device includes a first grating coupler, a second grating coupler and a waveguide. The waveguide has a least one bending section and is arranged in communication with the first grating coupler and the second grating coupler. The bending section comprises a first region having a first width and a first height, and a second region having a second width and a second height, wherein the first region is surrounded by the second region, and the second width decreases gradually from a first end of the bending section to a second end of the bending section.

Abstract: Disclosed are apparatus and methods for optical interconnections that include the integration of a photonics die (pDie) and an electronic die (eDie) with a socket layer, waveguides and fiber connectors to enable high bandwidth communications. In one embodiment, an exemplary optical interconnect device includes an electronic die coupled to a photonics die and integrated with a substrate, a socket, a board, a pair of micro-lenses and a mirror coupled to a waveguide, which can be embedded in the board. In another embodiment, the waveguide is embedded in a socket layer and coupled to a fiber connector. In these embodiments, the exemplary optical interface device can be coupled one more other optical interconnect devices via a waveguide array and/or a fiber array.

Abstract: A semiconductor photonics device includes a multiple-layer coupler structure. The multiple-layer coupler structure includes a plurality of optical coupler layers, which enables the properties of the optical coupler layers to be configured to achieve efficient optical coupling for a broad spectrum of optical wavelengths. This enables the multiple-layer coupler structure to handle wide bandwidth optical signals, which enables the semiconductor photonics device to support high-bandwidth optical communication applications. Moreover, the optical coupler layers of the multiple-layer coupler device enable the performance of the multiple-layer coupler structure to be increased using less complex and less costly semiconductor manufacturing processes and techniques.

Abstract: Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

Abstract: A vertical grating coupler is disclosed. The grating coupler includes a first waveguide having a first grating, a second waveguide having a second grating, and a dielectric layer positioned between the first waveguide and the second waveguide. The first grating includes a plurality of first grating ridges separated by a plurality first grating gaps, and the second grating includes a plurality of second grating ridges separated by a plurality second grating gaps. The first grating, the second grating, and the dielectric layer are located in a vertical overlap region between the first waveguide and the second waveguide. The first grating and the second grating have different grating periods, and each of the plurality of first grating gaps and second grating gaps are filled with the dielectric layer.

Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.

Abstract: A conductive line structure includes: first and second offset sets of long pillars that are substantially coaxial on an intra-set basis; a third set of offset short pillars, the short pillars being: overlapping of long pillars in the first and second sets; and organized into groups of first quantities of the short pillars; each of the groups being overlapping of and electrically coupled between a pair of one of the long pillars in the first set and a one of the long pillars in the second set such that, in each of the groups, each short pillar being overlapping of and electrically coupled between the pair; and each long pillar in each of the first and second sets being overlapped by a second quantity of short pillars in the third set and being electrically coupled to same; and the first quantity being less than the second quantity.

Abstract: Methods of fabricating optical devices with high refractive index materials are disclosed. The method includes forming a first oxide layer on a substrate and forming a patterned template layer with first and second trenches on the first oxide layer. A material of the patterned template layer has a first refractive index. The method further includes forming a first portion of a waveguide and a first portion of an optical coupler within the first and second trenches, respectively, forming a second portion of the waveguide and a second portion of the optical coupler on a top surface of the patterned template layer, and depositing a cladding layer on the second portions of the waveguide and optical coupler. The waveguide and the optical coupler include materials with a second refractive index that is greater than the first refractive index.

Abstract: An optical coupler includes: a plurality of waveguide core layers that are (i) stacked vertically one over another, (ii) spaced apart vertically one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler to a light output end of the optical coupler, wherein each of the plurality of waveguide core layers includes a plurality of distinct waveguide paths extending from the light receiving end of the optical coupler along a length of the optical coupler; and a cladding formed from a cladding material cladding material surrounding each of the plurality of waveguide core layers. Light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The device includes a dielectric layer, a ring waveguide embedded in the dielectric layer, and an input/output (I/O) waveguide embedded in the dielectric layer and optically coupled to the ring waveguide in a vertical manner. Materials of the dielectric layer, the ring waveguide, and the I/O waveguide are different.

Abstract: The present disclosure provides a semiconductor device, a photonic circuit, and a method for adjusting a resonant wavelength of an optical modulator. The semiconductor device includes a substrate, a first waveguide disposed on the substrate, a second waveguide disposed on the substrate and spaced apart from the first waveguide by a first distance, and a heater disposed on the second waveguide and having a first terminal and a second terminal. In addition, the first terminal of the heater is configured to receive a first electrical signal; the second terminal of the heater is configured to receive a second electrical signal; and the heater is configured to carry a time-varying current in response to the first electrical signal and the second electrical signal.

Abstract: A semiconductor structure includes an optical die, a first edge coupler, and a reflective layer. The optical die has a top surface and an edge. The first edge coupler is disposed in the optical die and adjacent to the edge of the optical die. The reflective layer is disposed in the optical die and adjacent to the edge of the optical die. The reflective layer is disposed over the first edge coupler and separated from the first edge coupler.

Abstract: Some embodiments relate to an optical module including a substrate; a first grating coupler overlying the substrate; and a second grating coupler overlying the first grating coupler, where the second grating coupler is configured to receive a first transverse mode of an input optical signal while passing a second transverse mode of the input optical signal to the first grating coupler, and where the first grating coupler is configured to receive the second transverse mode of the input optical signal.

Abstract: A vertical grating coupler is disclosed. The grating coupler includes a first waveguide having a first grating, a second waveguide having a second grating, and a dielectric layer positioned between the first waveguide and the second waveguide. The first grating includes a plurality of first grating ridges separated by a plurality first grating gaps, and the second grating includes a plurality of second grating ridges separated by a plurality second grating gaps. The first grating, the second grating, and the dielectric layer are located in a vertical overlap region between the first waveguide and the second waveguide. The first grating and the second grating have different grating periods, and each of the plurality of first grating gaps and second grating gaps are filled with the dielectric layer.

Abstract: A semiconductor structure includes a plurality of semiconductor dies, a first stitch structure disposed in the plurality of semiconductor dies, and a second stitch structure disposed in at least two adjacent semiconductor dies of the plurality of semiconductor dies. The semiconductor dies are arranged to form a column or a row. The first stitch structure crosses all interfaces between the semiconductor dies. The second stitch structure crosses an interface between the at least two adjacent semiconductor dies.

Abstract: Disclosed are apparatus and methods for optical interconnections that include the integration of a photonics die (pDie) and an electronic die (eDie) with a socket layer, waveguides and fiber connectors to enable high bandwidth communications. In one embodiment, an exemplary optical interconnect device includes an electronic die coupled to a photonics die and integrated with a substrate, a socket, a board, a pair of micro-lenses and a mirror coupled to a waveguide, which can be embedded in the board. In another embodiment, the waveguide is embedded in a socket layer and coupled to a fiber connector. In these embodiments, the exemplary optical interface device can be coupled one more other optical interconnect devices via a waveguide array and/or a fiber array.