Patents by Inventor Stefan Schmitz
Stefan Schmitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10037890Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.Type: GrantFiled: October 11, 2016Date of Patent: July 31, 2018Assignee: Lam Research CorporationInventors: Adarsh Basavalingappa, Peng Wang, Bhaskar Nagabhirava, Michael Goss, Prabhakara Gopaladasu, Randolph Knarr, Stefan Schmitz, Phil Friddle
-
Publication number: 20180175690Abstract: Described is a method for producing a stator, in particular for electric motors. In a first step, a plurality of flexible electrical conductors are combined to form a conductor bundle. In a second step, two end regions of the conductor bundle are pressed in such a way that a central region of the conductor bundle formed between the two end regions remains flexible. Also described is a corresponding stator.Type: ApplicationFiled: December 18, 2017Publication date: June 21, 2018Applicant: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Johannes Lange, Tobias Engelhardt, Stefan Schmitz, Axel Heitmann, Jan Nägelkrämer, Stefan Oechslen, Daniel Knoblauch, Wolfgang Thaler, Stefan Heinz
-
Patent number: 9975104Abstract: Processing unit for assisting and/or performing a processing basic operation for a chemical reaction, with an operating unit for preparing a contribution for the processing basic operation and a frame for accommodating the operating units, the frame having an extension dL in the longitudinal direction which corresponds substantially to an integral multiple ZL of an integral portion NL of an extension LL, in the longitudinal direction of an interior of a standard transport container, in accordance with DIN ISO 668, and/or the frame having an extension dQ in the transverse direction with corresponds substantially to an integral multiple ZQ of an integral portion NQ of an extension LQ in the transverse direction of an interior of a standard transport container, in particular in accordance with DIN ISO 668, wherein different processing units can be stored in a pool for different processing basic operations and be assembled in modular and flexible manner in the standard transport container for the synthesis of a gType: GrantFiled: December 18, 2013Date of Patent: May 22, 2018Assignee: BAYER AKTIENGESELLSCHAFTInventors: Lars Frye, Florian Lipski, Stefan Schmitz, Nicolai Krasberg, Dietmar Günther, Carsten Meyer, Carsten Conzen, Ulrich Liesenfelder, Ingo Steinmeister, Karl-Robert Boos, Wolfgang Güdel, Karl-Hermann Koeching
-
Patent number: 9972502Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.Type: GrantFiled: September 11, 2015Date of Patent: May 15, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Jae Ho Lee, Changwoo Lee, Phil Friddle, Stefan Schmitz, Naveed Ansari, Michael Goss, Noel Sun
-
Publication number: 20180102253Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.Type: ApplicationFiled: October 11, 2016Publication date: April 12, 2018Inventors: Adarsh BASAVALINGAPPA, Peng WANG, Bhaskar NAGABHIRAVA, Michael GOSS, Prabhakara GOPALADASU, Randolph KNARR, Stefan SCHMITZ, Phil FRIDDLE
-
Publication number: 20170076957Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.Type: ApplicationFiled: September 11, 2015Publication date: March 16, 2017Inventors: Jae Ho Lee, Changwoo Lee, Phil Friddle, Stefan Schmitz, Naveed Ansari, Michael Goss, Noel Sun
-
Patent number: 9566872Abstract: The invention relates to a charging apparatus for contactless charging of an electrical energy store (2) of a motor vehicle (1), comprising a primary unit (13) which is arranged outside the motor vehicle (1) and comprising a vehicle-mounted secondary unit (14). In order to simplify contactless charging of a motor vehicle comprising an electrical energy store, the vehicle-mounted secondary unit (14) can be moved relative to the primary unit (13), which is arranged outside the motor vehicle (1), in order to reduce the size of an air gap or distance (16) between the primary unit (13) and the secondary unit (14).Type: GrantFiled: March 25, 2014Date of Patent: February 14, 2017Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Ulrich Eger, Wolfgang Herdeg, Stefan Schmitz
-
Patent number: 9530651Abstract: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.Type: GrantFiled: January 30, 2015Date of Patent: December 27, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz
-
Patent number: 9515070Abstract: A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.Type: GrantFiled: December 2, 2015Date of Patent: December 6, 2016Assignee: International Business Machines CorporationInventors: David V. Horak, Effendi Leobandung, Stefan Schmitz, Junli Wang
-
Patent number: 9472407Abstract: A method for fabricating a field effect transistor device includes depositing a hardmask over a semiconductor layer depositing a metallic alloy layer over the hardmask, defining a semiconductor fin, depositing a dummy gate stack material layer conformally on exposed portions of the fin, patterning a dummy gate stack by removing portions of the dummy gate stack material using an etching process that selectively removes exposed portions of the dummy gate stack without appreciably removing portions of the metallic alloy layer, removing exposed portions of the metallic alloy layer, forming spacers adjacent to the dummy gate stack, forming source and drain regions on exposed regions of the semiconductor fin, removing the dummy gate stack, removing exposed portions of the metallic alloy layer, and forming a gate stack conformally over exposed portions of the insulator layer and the semiconductor fin.Type: GrantFiled: January 30, 2015Date of Patent: October 18, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz
-
Patent number: 9437436Abstract: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.Type: GrantFiled: January 30, 2015Date of Patent: September 6, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz
-
Publication number: 20160086944Abstract: A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.Type: ApplicationFiled: December 2, 2015Publication date: March 24, 2016Inventors: David V. Horak, Effendi Leobandung, Stefan Schmitz, Junli Wang
-
Patent number: 9245965Abstract: A structure including a first plurality of fins and a second plurality of fins etched from a semiconductor substrate, and a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins.Type: GrantFiled: July 10, 2014Date of Patent: January 26, 2016Assignee: GLOBALFOUNDRIES Inc.Inventors: Balasubramanian S. Haran, Sanjay Mehta, Shom Ponoth, Ravikumar Ramachandran, Stefan Schmitz, Theodorus E. Standaert
-
Patent number: 9231080Abstract: A replacement metal gate process which includes forming a fin on a semiconductor substrate; forming a dummy gate structure on the fin; removing the dummy gate structure to leave an opening that is to be filled with a permanent gate structure; depositing a high dielectric constant (high-k) dielectric material in the opening and over the fin; depositing a work function metal in the opening and over the fin so as to be in contact with the high-k dielectric material, the high k dielectric material and the work function metal only partially filling the opening; filling a remainder of the opening with an organic material; etching the organic material until it is partially removed from the opening; etching the work function metal until it is at a same level as the organic material; removing the organic material; and filling the opening with a metal until the opening is completely filled.Type: GrantFiled: March 24, 2014Date of Patent: January 5, 2016Assignee: International Business Machines CorporationInventors: David V. Horak, Effendi Leobandung, Stefan Schmitz, Junli Wang
-
Publication number: 20150368953Abstract: A guidance system for sliding doors, with a running rail for guiding a track roller of a door guide, a drive system having a drive device, and a travel space of the door guide extending in the longitudinal direction of the running rail. The travel space is delimited at least in part by the running rail. The drive device is arranged in the longitudinal direction of the running rail as a prolongation of the travel space and is mounted via a mounting device in the running rail.Type: ApplicationFiled: June 18, 2013Publication date: December 24, 2015Applicant: GEBR. WILLACH GMBHInventors: Jens WILLACH, Stefan SCHMITZ
-
Patent number: 9214397Abstract: A method for forming an electrical device that includes forming a high-k gate dielectric layer over a semiconductor substrate that is patterned to separate a first portion of the high-k gate dielectric layer that is present on a first conductivity device region from a second portion of the high-k gate dielectric layer that is present on a second conductivity device region. A connecting gate conductor is formed on the first portion and the second portion of the high-k gate dielectric layer. The connecting gate conductor extends from the first conductivity device region over the isolation region to the second conductivity device region. One of the first conductivity device region and the second conductivity device region may then be exposed to an oxygen containing atmosphere. Exposure with the oxygen containing atmosphere modifies a threshold voltage of the semiconductor device that is exposed.Type: GrantFiled: March 7, 2013Date of Patent: December 15, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Bruce B. Doris, Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz, Pranita Kerber, Shom Ponoth, Raghavasimhan Sreenivasan, Stefan Schmitz
-
Publication number: 20150298094Abstract: Processing unit for assisting and/or performing a processing basic operation for a chemical reaction, with an operating unit for preparing a contribution for the processing basic operation and a frame for accommodating the operating units, the frame having an extension dL in the longitudinal direction which corresponds substantially to an integral multiple ZL of an integral portion NL of an extension LL, in the longitudinal direction of an interior of a standard transport container, in accordance with DIN ISO 668, and/or the frame having an extension dQ in the transverse direction with corresponds substantially to an integral multiple ZQ of an integral portion NQ of an extension LQ in the transverse direction of an interior of a standard transport container, in particular in accordance with DIN ISO 668, wherein different processing units can be stored in a pool for different processing basic operations and be assembled in modular and flexible manner in the standard transport container for the synthesis of a gType: ApplicationFiled: December 18, 2013Publication date: October 22, 2015Applicant: BAYER TECHNOLOGY SERVICES GMBHInventors: Lars FRYE, Florian LIPSKI, Stefan SCHMITZ, Nicolai KRASBERG, Dietmar GÜNTHER, Carsten MEYER, Carsten CONZEN, Ulrich LIESENFELDER, Ingo STEINMEISTER, Karl-Robert BOOS, Wolfgang GÜDEL, Karl-Hermann KOECHING
-
Publication number: 20150301522Abstract: A production installation having at least two process modules (P1, . . . , Pn) that can be connected to one another for production engineering purposes and a communication network (2), wherein each process module (P1, . . . , Pn) has an electronic device by means of which the respective process module (P1, . . . , Pn) can be connected to the communication network (2) for communications engineering purposes and is set up to control and/or regulate the respective process module (P1, . . . , Pn) to independently carry out a particular process section of the production.Type: ApplicationFiled: November 6, 2013Publication date: October 22, 2015Applicant: BAYER TECHNOLOGY SERVICES GMBHInventors: Stefan Ochs, Stefan Schmitz, Gerd Jagusch, Carsten Meyer, Malik Busse
-
Patent number: 9153447Abstract: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.Type: GrantFiled: November 9, 2012Date of Patent: October 6, 2015Assignee: International Business Machines CorporationInventors: Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz
-
Publication number: 20150270373Abstract: A replacement metal gate process which includes forming a fin on a semiconductor substrate; forming a dummy gate structure on the fin; removing the dummy gate structure to leave an opening that is to be filled with a permanent gate structure; depositing a high dielectric constant (high-k) dielectric material in the opening and over the fin; depositing a work function metal in the opening and over the fin so as to be in contact with the high-k dielectric material, the high k dielectric material and the work function metal only partially filling the opening; filling a remainder of the opening with an organic material; etching the organic material until it is partially removed from the opening; etching the work function metal until it is at a same level as the organic material; removing the organic material; and filling the opening with a metal until the opening is completely filled.Type: ApplicationFiled: March 24, 2014Publication date: September 24, 2015Applicant: Intemational Business Machines CorporationInventors: David V. Horak, Effendi Leobandung, Stefan Schmitz, Junli Wang