Abstract: A method operates a data recording system which has a central station, an intermediate station, and a terminal station. The central station and the intermediate station define a tertiary, two-way communication path and the central station and the intermediate station define a primary, two-way communication path via a radio link. A plurality of messages or message parts which have different validity time limits are generated in the central station on the basis of a command, the plurality of message parts which are valid for a limited time are transmitted from the central station to the intermediate station. The validity of the message parts is checked in the intermediate station, and, if a message part is still valid for transmission from the intermediate station to the terminal station, the message part concerned is transmitted within a message from the intermediate station to the terminal station.

Abstract: A method for operating an electronic consumption data module. Consumption data are transmitted via a communication system to a receiver, and different keys are provided for different software authorizations. Command authorizations are defined as software authorizations in the consumption data module. A consumption data module has a memory, a control and/or regulating unit, and a communication device for the consumption data transmission. Different keys are provided for different software authorizations, and the command authorizations are defined as software authorizations in the consumption data module. The consumption data module is operable by the method.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A production installation having at least two process modules (P1, . . . , Pn) that can be connected to one another for production engineering purposes and a communication network (2), wherein each process module (P1, . . . , Pn) has an electronic device by means of which the respective process module (P1, . . . , Pn) can be connected to the communication network (2) for communications engineering purposes and is set up to control and/or regulate the respective process module (P1, . . . , Pn) to independently carry out a particular process section of the production.

Abstract: A system for performing a sidewall image transfer process includes a substrate processing chamber configured to process a substrate including a mandrel layer. A controller is configured to control the substrate processing chamber to, without the substrate being removed from the within the substrate processing chamber, etch the mandrel layer, subsequent to etching the mandrel layer, deposit a thin spacer layer on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls, subsequent to depositing the thin spacer layer, etch the thin spacer layer to remove the thin spacer layer such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains and, subsequent to etching the thin spacer layer, etch the mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

Abstract: A coil segment, in particular for a stator coil, wherein the coil segment has a conductor bundle, wherein the conductor bundle has a multiplicity of electrical conductors, wherein the conductor bundle has a form fit, wherein the conductor bundle has at least one cutout for feeding coolant. Furthermore, a method for manufacturing a stator coil, a stator coil having a coil segment according to the present invention, a machine having a stator coil according to the present invention, and a vehicle having a machine according to the present invention.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: Described is a method for producing a stator, in particular for electric motors. In a first step, a plurality of flexible electrical conductors are combined to form a conductor bundle. In a second step, two end regions of the conductor bundle are pressed in such a way that a central region of the conductor bundle formed between the two end regions remains flexible. Also described is a corresponding stator.

Abstract: Processing unit for assisting and/or performing a processing basic operation for a chemical reaction, with an operating unit for preparing a contribution for the processing basic operation and a frame for accommodating the operating units, the frame having an extension dL in the longitudinal direction which corresponds substantially to an integral multiple ZL of an integral portion NL of an extension LL, in the longitudinal direction of an interior of a standard transport container, in accordance with DIN ISO 668, and/or the frame having an extension dQ in the transverse direction with corresponds substantially to an integral multiple ZQ of an integral portion NQ of an extension LQ in the transverse direction of an interior of a standard transport container, in particular in accordance with DIN ISO 668, wherein different processing units can be stored in a pool for different processing basic operations and be assembled in modular and flexible manner in the standard transport container for the synthesis of a g

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: The invention relates to a charging apparatus for contactless charging of an electrical energy store (2) of a motor vehicle (1), comprising a primary unit (13) which is arranged outside the motor vehicle (1) and comprising a vehicle-mounted secondary unit (14). In order to simplify contactless charging of a motor vehicle comprising an electrical energy store, the vehicle-mounted secondary unit (14) can be moved relative to the primary unit (13), which is arranged outside the motor vehicle (1), in order to reduce the size of an air gap or distance (16) between the primary unit (13) and the secondary unit (14).

Abstract: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.

Abstract: A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.

Abstract: A method for fabricating a field effect transistor device includes depositing a hardmask over a semiconductor layer depositing a metallic alloy layer over the hardmask, defining a semiconductor fin, depositing a dummy gate stack material layer conformally on exposed portions of the fin, patterning a dummy gate stack by removing portions of the dummy gate stack material using an etching process that selectively removes exposed portions of the dummy gate stack without appreciably removing portions of the metallic alloy layer, removing exposed portions of the metallic alloy layer, forming spacers adjacent to the dummy gate stack, forming source and drain regions on exposed regions of the semiconductor fin, removing the dummy gate stack, removing exposed portions of the metallic alloy layer, and forming a gate stack conformally over exposed portions of the insulator layer and the semiconductor fin.

Abstract: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.

Abstract: A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.

Abstract: A structure including a first plurality of fins and a second plurality of fins etched from a semiconductor substrate, and a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins.

Abstract: A replacement metal gate process which includes forming a fin on a semiconductor substrate; forming a dummy gate structure on the fin; removing the dummy gate structure to leave an opening that is to be filled with a permanent gate structure; depositing a high dielectric constant (high-k) dielectric material in the opening and over the fin; depositing a work function metal in the opening and over the fin so as to be in contact with the high-k dielectric material, the high k dielectric material and the work function metal only partially filling the opening; filling a remainder of the opening with an organic material; etching the organic material until it is partially removed from the opening; etching the work function metal until it is at a same level as the organic material; removing the organic material; and filling the opening with a metal until the opening is completely filled.